Quadratic to linear magnetoresistance tuning in
Abstract
The change of a material’s electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann’s theory predicts a quadratic growth in magnetoresistance (MR) at low B, and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, two dimensional electron gas (2DEG) show positive, non-saturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angledependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature-independent, suggestive of quantum mechanical origin.
- Authors:
-
- Nanyang Technological Univ. (Singapore)
- Univ. of California, Santa Cruz, CA (United States)
- Ames Lab. and Iowa State Univ., Ames, IA (United States)
- Publication Date:
- Research Org.:
- Ames Lab., Ames, IA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1492303
- Alternate Identifier(s):
- OSTI ID: 1490151
- Report Number(s):
- IS-J-9853
Journal ID: ISSN 2469-9950; PRBMDO
- Grant/Contract Number:
- MOE2014-T2-2-112; NRFI2015-04; FG02-06ER46319; AC02-07CH11358
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 99; Journal Issue: 4; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Mitra, Sreemanta, Kang, Jeremy Goh Swee, Shin, John, Ng, Jin Quan, Sunku, Sai Swaroop, Kong, Tai, Canfield, Paul C., Shastry, B. Sriram, Sengupta, Pinaki, and Panagopoulos, Christos. Quadratic to linear magnetoresistance tuning in TmB4. United States: N. p., 2019.
Web. doi:10.1103/PhysRevB.99.045119.
Mitra, Sreemanta, Kang, Jeremy Goh Swee, Shin, John, Ng, Jin Quan, Sunku, Sai Swaroop, Kong, Tai, Canfield, Paul C., Shastry, B. Sriram, Sengupta, Pinaki, & Panagopoulos, Christos. Quadratic to linear magnetoresistance tuning in TmB4. United States. https://doi.org/10.1103/PhysRevB.99.045119
Mitra, Sreemanta, Kang, Jeremy Goh Swee, Shin, John, Ng, Jin Quan, Sunku, Sai Swaroop, Kong, Tai, Canfield, Paul C., Shastry, B. Sriram, Sengupta, Pinaki, and Panagopoulos, Christos. Wed .
"Quadratic to linear magnetoresistance tuning in TmB4". United States. https://doi.org/10.1103/PhysRevB.99.045119. https://www.osti.gov/servlets/purl/1492303.
@article{osti_1492303,
title = {Quadratic to linear magnetoresistance tuning in TmB4},
author = {Mitra, Sreemanta and Kang, Jeremy Goh Swee and Shin, John and Ng, Jin Quan and Sunku, Sai Swaroop and Kong, Tai and Canfield, Paul C. and Shastry, B. Sriram and Sengupta, Pinaki and Panagopoulos, Christos},
abstractNote = {The change of a material’s electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann’s theory predicts a quadratic growth in magnetoresistance (MR) at low B, and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, two dimensional electron gas (2DEG) show positive, non-saturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angledependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature-independent, suggestive of quantum mechanical origin.},
doi = {10.1103/PhysRevB.99.045119},
journal = {Physical Review B},
number = 4,
volume = 99,
place = {United States},
year = {Wed Jan 09 00:00:00 EST 2019},
month = {Wed Jan 09 00:00:00 EST 2019}
}
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