Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling

Bailey, Jeff; Poplavskyy, Dmitry; Zapalac, Geordie; Mansfield, Lorelle M.; Shafarman, William

doi:10.1109/JPHOTOV.2018.2882204

Title: Voltage-Induced Charge Redistribution in Cu(In,Ga)Se₂ Devices Studied With High-Speed Capacitance–Voltage Profiling

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Abstract

Devices made from Cu(In, Ga)Se₂ (CIGS) solar cell material have been evaluated with high-speed capacitance-voltage profiling after stepwise voltage changes. The changes primarily affect near-interface charge at deep acceptors within the CIGS absorber layer and generate temperature-dependent capacitance changes observed in deep-level transient spectroscopy measurements. SCAPS device modeling indicates that the deep acceptor concentration is up to the two orders of magnitude higher than the shallow doping level. High deep acceptor concentrations are found in all materials studied here. In conclusion, the large deep defect levels are high enough to limit minority carrier lifetime and cell efficiency.

Authors:

^[1]; Poplavskyy, Dmitry ^[1]; Zapalac, Geordie ^[1];

^[2]; Shafarman, William ^[3]

MiaSole Hi-Tech Corp., Santa Clara, CA (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Univ. of Delaware, Newark, DE (United States)

Publication Date:: Mon Dec 03 00:00:00 EST 2018

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Delaware, Newark, DE (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1489187

Alternate Identifier(s):: OSTI ID: 1780935

Report Number(s):: NREL/JA-5K00-73004
Journal ID: ISSN 2156-3381

Grant/Contract Number:: AC36-08GO28308; EE0007542

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CuInxGa1-xSe2 (CIGS); capacitance methods; solar cells

Citation Formats


                    Bailey, Jeff, Poplavskyy, Dmitry, Zapalac, Geordie, Mansfield, Lorelle M., and Shafarman, William. Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling.  United States: N. p., 2018. 
Web.  doi:10.1109/JPHOTOV.2018.2882204.

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                    Bailey, Jeff, Poplavskyy, Dmitry, Zapalac, Geordie, Mansfield, Lorelle M., & Shafarman, William. Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling.  United States.  https://doi.org/10.1109/JPHOTOV.2018.2882204

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                    Bailey, Jeff, Poplavskyy, Dmitry, Zapalac, Geordie, Mansfield, Lorelle M., and Shafarman, William. Mon .  
"Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling".  United States.  https://doi.org/10.1109/JPHOTOV.2018.2882204.  https://www.osti.gov/servlets/purl/1489187.

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@article{osti_1489187,

  title        = {Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling},

  author       = {Bailey, Jeff and Poplavskyy, Dmitry and Zapalac, Geordie and Mansfield, Lorelle M. and Shafarman, William},

  abstractNote = {Devices made from Cu(In, Ga)Se2 (CIGS) solar cell material have been evaluated with high-speed capacitance-voltage profiling after stepwise voltage changes. The changes primarily affect near-interface charge at deep acceptors within the CIGS absorber layer and generate temperature-dependent capacitance changes observed in deep-level transient spectroscopy measurements. SCAPS device modeling indicates that the deep acceptor concentration is up to the two orders of magnitude higher than the shallow doping level. High deep acceptor concentrations are found in all materials studied here. In conclusion, the large deep defect levels are high enough to limit minority carrier lifetime and cell efficiency.},

  doi          = {10.1109/JPHOTOV.2018.2882204},

  journal      = {IEEE Journal of Photovoltaics},

  number       = 1,

  volume       = 9,

  place        = {United States},

  year         = {Mon Dec 03 00:00:00 EST 2018},

  month        = {Mon Dec 03 00:00:00 EST 2018}

}

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Title: Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling

Abstract

Citation Formats

Title: Voltage-Induced Charge Redistribution in Cu(In,Ga)Se₂ Devices Studied With High-Speed Capacitance–Voltage Profiling