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Title: Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures

Abstract

Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge. Here in this work, we utilized a semitransparent film of p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap of 0.68 ± 0.07 eV in combination with a molecular beam epitaxy grown n-ZnO layer to build a vertical p-SC-SWNT/n-ZnO heterojunction-based UV photodetector. The resulting device shows a current rectification ratio of 103, a current photoresponsivity up to 400 A/W in the UV spectral range from 370 to 230 nm, and a low dark current. The detector is practically visible-blind with the UV-to-visible photoresponsivity ratio of 105 due to extremely short photocarrier lifetimes in the one-dimensional SWNTs because of strong electron–phonon interactions leading to exciton formation. Finallyl, in this vertical configuration, UV radiation penetrates the top semitransparent SC-SWNT layer with low losses (10–20%) and excites photocarriers within the n-ZnO layer in close proximity to the p-SC-SWNT/n-ZnO interface, where electron–hole pairs are efficiently separated by a high built-in electric field associated with the heterojunction.

Authors:
 [1];  [1]; ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [1]
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  1. Univ. of California, Riverside, CA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1470128
Grant/Contract Number:  
SC0012670
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 42; Related Information: SHINES partners with University of California, Riverside (lead); Arizona State University; Colorado State University; Johns Hopkins University; University of California Irvine; University of California Los Angeles; University of Texas at Austin; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; phonons; thermal conductivity; thermoelectric; spin dynamics; spintronics; carbon nanotubes; ZnO; UV photodetector; heterojunction; SWNT thin films

Citation Formats

Li, Guanghui, Suja, Mohammad, Chen, Mingguang, Bekyarova, Elena, Haddon, Robert C., Liu, Jianlin, and Itkis, Mikhail E. Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures. United States: N. p., 2017. Web. doi:10.1021/acsami.7b07765.
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Li, Guanghui, Suja, Mohammad, Chen, Mingguang, Bekyarova, Elena, Haddon, Robert C., Liu, Jianlin, & Itkis, Mikhail E. Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures. United States. https://doi.org/10.1021/acsami.7b07765
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Li, Guanghui, Suja, Mohammad, Chen, Mingguang, Bekyarova, Elena, Haddon, Robert C., Liu, Jianlin, and Itkis, Mikhail E. Tue . "Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures". United States. https://doi.org/10.1021/acsami.7b07765. https://www.osti.gov/servlets/purl/1470128.
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@article{osti_1470128,
title = {Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures},
author = {Li, Guanghui and Suja, Mohammad and Chen, Mingguang and Bekyarova, Elena and Haddon, Robert C. and Liu, Jianlin and Itkis, Mikhail E.},
abstractNote = {Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge. Here in this work, we utilized a semitransparent film of p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap of 0.68 ± 0.07 eV in combination with a molecular beam epitaxy grown n-ZnO layer to build a vertical p-SC-SWNT/n-ZnO heterojunction-based UV photodetector. The resulting device shows a current rectification ratio of 103, a current photoresponsivity up to 400 A/W in the UV spectral range from 370 to 230 nm, and a low dark current. The detector is practically visible-blind with the UV-to-visible photoresponsivity ratio of 105 due to extremely short photocarrier lifetimes in the one-dimensional SWNTs because of strong electron–phonon interactions leading to exciton formation. Finallyl, in this vertical configuration, UV radiation penetrates the top semitransparent SC-SWNT layer with low losses (10–20%) and excites photocarriers within the n-ZnO layer in close proximity to the p-SC-SWNT/n-ZnO interface, where electron–hole pairs are efficiently separated by a high built-in electric field associated with the heterojunction.},
doi = {10.1021/acsami.7b07765},
journal = {ACS Applied Materials and Interfaces},
number = 42,
volume = 9,
place = {United States},
year = {Tue Sep 26 00:00:00 EDT 2017},
month = {Tue Sep 26 00:00:00 EDT 2017}
}
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https://doi.org/10.1021/acsami.7b07765
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