CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

doi:10.1063/1.5023811

Title: CdCl₂ passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Abstract

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Furthermore, contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materialsmore »« less

Authors:

Swanson, Drew E. ^[1];

^[2]; Abbas, Ali ^[3];

^[2]; Liu, Hanxiao ^[4];

^[4];

^[3]; Zhang, Yong-Hang ^[4]; Metzger, Wyatt K. ^[5]; Sampath, W. S. ^[2]; Holman, Zachary C. ^[4]

Arizona State Univ., Tempe, AZ (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Colorado State Univ., Fort Collins, CO (United States)
Loughborough Univ. (United Kingdom)
Arizona State Univ., Tempe, AZ (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Tue May 22 00:00:00 EDT 2018

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Photovoltaic Research and Development (PVRD) Program

OSTI Identifier:: 1456869

Alternate Identifier(s):: OSTI ID: 1438286

Report Number(s):: NREL/JA-5K00-71795
Journal ID: ISSN 0021-8979

Grant/Contract Number:: AC36-08GO28308; EE0007552

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 123; Journal Issue: 20; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; polycrystals; luminescence; transition metals; semiconductors; solar cells; photodetectors; crystal defects; electrical engineering; band gap

Citation Formats


                    Swanson, Drew E., Reich, Carey, Abbas, Ali, Shimpi, Tushar, Liu, Hanxiao, Ponce, Fernando A., Walls, John M., Zhang, Yong-Hang, Metzger, Wyatt K., Sampath, W. S., and Holman, Zachary C. CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5023811.

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                    Swanson, Drew E., Reich, Carey, Abbas, Ali, Shimpi, Tushar, Liu, Hanxiao, Ponce, Fernando A., Walls, John M., Zhang, Yong-Hang, Metzger, Wyatt K., Sampath, W. S., & Holman, Zachary C. CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells.  United States.  https://doi.org/10.1063/1.5023811

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                    Swanson, Drew E., Reich, Carey, Abbas, Ali, Shimpi, Tushar, Liu, Hanxiao, Ponce, Fernando A., Walls, John M., Zhang, Yong-Hang, Metzger, Wyatt K., Sampath, W. S., and Holman, Zachary C. Tue .  
"CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells".  United States.  https://doi.org/10.1063/1.5023811.  https://www.osti.gov/servlets/purl/1456869.

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@article{osti_1456869,

  title        = {CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells},

  author       = {Swanson, Drew E. and Reich, Carey and Abbas, Ali and Shimpi, Tushar and Liu, Hanxiao and Ponce, Fernando A. and Walls, John M. and Zhang, Yong-Hang and Metzger, Wyatt K. and Sampath, W. S. and Holman, Zachary C.},

  abstractNote = {As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Furthermore, contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.},

  doi          = {10.1063/1.5023811},

  journal      = {Journal of Applied Physics},

  number       = 20,

  volume       = 123,

  place        = {United States},

  year         = {Tue May 22 00:00:00 EDT 2018},

  month        = {Tue May 22 00:00:00 EDT 2018}

}

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Works referencing / citing this record:

Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors
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Title: CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Abstract

Citation Formats

3D Lifetime Tomography Reveals How CdCl 2 Improves Recombination Throughout CdTe Solar Cells journal, November 2016

Incorporation of Cd 1-x Mg x Te as an Electron Reflector for Cadmium Telluride Photovoltaic Cells journal, January 2015

Identification of critical stacking faults in thin-film CdTe solar cells journal, August 2014

Energy-yield prediction for II–VI-based thin-film tandem solar cells journal, January 2016

The potential and device physics of interdigitated thin-film solar cells journal, May 2008

Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17% journal, May 2016

Grain-Boundary-Enhanced Carrier Collection in CdTe Solar Cells journal, April 2014

Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells journal, May 1991

Emitter/absorber interface of CdTe solar cells journal, June 2016

Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description journal, December 2016

Low-Cost CdTe/Silicon Tandem Solar Cells journal, November 2017

Co-sublimation of CdSexTe1−x layers for CdTe solar cells journal, January 2017

Solar cell efficiency tables (version 50) journal, June 2017

Single-crystal II-VI on Si single-junction and tandem solar cells journal, April 2010

A review of thin film solar cell technologies and challenges journal, April 2017

Effect of the cadmium chloride treatment on RF sputtered Cd 0.6 Zn 0.4 Te films for application in multijunction solar cells journal, September 2016

Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions journal, August 2017

Selecting tandem partners for silicon solar cells journal, September 2016

A low-cost non-toxic post-growth activation step for CdTe solar cells journal, June 2014

Deposition and characterization of Cd 1−x Mg x Te thin films grown by a novel cosublimation method journal, March 2014

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells journal, March 1961

Grain-boundary recombination in Cu(In,Ga)Se2 solar cells journal, December 2005

Improved CdTe Solar-Cell Performance with An Evaporated Te Layer before The Back Contact journal, January 2017

Single vacuum chamber with multiple close space sublimation sources to fabricate CdTe solar cells journal, February 2016

The impact of charged grain boundaries on thin-film solar cells and characterization journal, September 2005

Techno-economic analysis of tandem photovoltaic systems journal, January 2016

Band alignment of front contact layers for high-efficiency CdTe solar cells journal, December 2016

Optical properties and electronic structure of amorphous Ge and Si journal, January 1968

Charged grain boundaries reduce the open circuit voltage of polycrystalline solar cells--An analytical description text, January 2016

Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors journal, February 2020

Title: CdCl₂ passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

3D Lifetime Tomography Reveals How CdCl ₂ Improves Recombination Throughout CdTe Solar Cells
journal, November 2016

Incorporation of Cd _1-x Mg _x Te as an Electron Reflector for Cadmium Telluride Photovoltaic Cells
journal, January 2015

Identification of critical stacking faults in thin-film CdTe solar cells
journal, August 2014

Energy-yield prediction for II–VI-based thin-film tandem solar cells
journal, January 2016

The potential and device physics of interdigitated thin-film solar cells
journal, May 2008

Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%
journal, May 2016

Grain-Boundary-Enhanced Carrier Collection in CdTe Solar Cells
journal, April 2014

Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells
journal, May 1991

Emitter/absorber interface of CdTe solar cells
journal, June 2016

Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description
journal, December 2016

Low-Cost CdTe/Silicon Tandem Solar Cells
journal, November 2017

Co-sublimation of CdSexTe1−x layers for CdTe solar cells
journal, January 2017

Solar cell efficiency tables (version 50)
journal, June 2017

Single-crystal II-VI on Si single-junction and tandem solar cells
journal, April 2010

A review of thin film solar cell technologies and challenges
journal, April 2017

Effect of the cadmium chloride treatment on RF sputtered Cd _0.6 Zn _0.4 Te films for application in multijunction solar cells
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Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
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