Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models

McLain, Michael Lee; McDonald, Joseph Kyle; Hembree, Charles E.; Sheridan, Timothy J.; Weingartner, Thomas A.; Dodd, Paul E.; Shaneyfelt, Marty R.; Hartman, Fred; Black, Dolores Archuleta

doi:10.1109/TNS.2017.2764799

Title: Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models

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Abstract

Here, the effect of a linear accelerator’s (LINAC’s) microstructure (i.e., train of narrow pulses) on devices and the associated transient photocurrent models are investigated. The data indicate that the photocurrent response of Si-based RF bipolar junction transistors and RF p-i-n diodes is considerably higher when taking into account the microstructure effects. Similarly, the response of diamond, SiO₂, and GaAs photoconductive detectors (standard radiation diagnostics) is higher when taking into account the microstructure. This has obvious hardness assurance implications when assessing the transient response of devices because the measured photocurrent and dose rate levels could be underestimated if microstructure effects are not captured. Indeed, the rate the energy is deposited in a material during the microstructure peaks is much higher than the filtered rate which is traditionally measured. In addition, photocurrent models developed with filtered LINAC data may be inherently inaccurate if a device is able to respond to the microstructure.

Authors:

^[1]; McDonald, Joseph Kyle ^[1];

^[1]; Sheridan, Timothy J. ^[1]; Weingartner, Thomas A. ^[1]; Dodd, Paul E. ^[1]; Shaneyfelt, Marty R. ^[1]; Hartman, Fred ^[1]; Black, Dolores Archuleta ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Fri Oct 20 00:00:00 EDT 2017

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1421647

Report Number(s):: SAND-2018-0527J
Journal ID: ISSN 0018-9499; 660032

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 65; Journal Issue: 1; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 43 PARTICLE ACCELERATORS; dose rate; dosimetry; hardness assurance; linear accelerator (LINAC); microstructure; photocurrent; photocurrent modeling; radiation diagnostics; RF devices

Citation Formats


                    McLain, Michael Lee, McDonald, Joseph Kyle, Hembree, Charles E., Sheridan, Timothy J., Weingartner, Thomas A., Dodd, Paul E., Shaneyfelt, Marty R., Hartman, Fred, and Black, Dolores Archuleta. Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models.  United States: N. p., 2017. 
Web.  doi:10.1109/TNS.2017.2764799.

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                    McLain, Michael Lee, McDonald, Joseph Kyle, Hembree, Charles E., Sheridan, Timothy J., Weingartner, Thomas A., Dodd, Paul E., Shaneyfelt, Marty R., Hartman, Fred, & Black, Dolores Archuleta. Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models.  United States.  https://doi.org/10.1109/TNS.2017.2764799

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                    McLain, Michael Lee, McDonald, Joseph Kyle, Hembree, Charles E., Sheridan, Timothy J., Weingartner, Thomas A., Dodd, Paul E., Shaneyfelt, Marty R., Hartman, Fred, and Black, Dolores Archuleta. Fri .  
"Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models".  United States.  https://doi.org/10.1109/TNS.2017.2764799.  https://www.osti.gov/servlets/purl/1421647.

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@article{osti_1421647,

  title        = {Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models},

  author       = {McLain, Michael Lee and McDonald, Joseph Kyle and Hembree, Charles E. and Sheridan, Timothy J. and Weingartner, Thomas A. and Dodd, Paul E. and Shaneyfelt, Marty R. and Hartman, Fred and Black, Dolores Archuleta},

  abstractNote = {Here, the effect of a linear accelerator’s (LINAC’s) microstructure (i.e., train of narrow pulses) on devices and the associated transient photocurrent models are investigated. The data indicate that the photocurrent response of Si-based RF bipolar junction transistors and RF p-i-n diodes is considerably higher when taking into account the microstructure effects. Similarly, the response of diamond, SiO2, and GaAs photoconductive detectors (standard radiation diagnostics) is higher when taking into account the microstructure. This has obvious hardness assurance implications when assessing the transient response of devices because the measured photocurrent and dose rate levels could be underestimated if microstructure effects are not captured. Indeed, the rate the energy is deposited in a material during the microstructure peaks is much higher than the filtered rate which is traditionally measured. In addition, photocurrent models developed with filtered LINAC data may be inherently inaccurate if a device is able to respond to the microstructure.},

  doi          = {10.1109/TNS.2017.2764799},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 1,

  volume       = 65,

  place        = {United States},

  year         = {Fri Oct 20 00:00:00 EDT 2017},

  month        = {Fri Oct 20 00:00:00 EDT 2017}

}

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