Microinhomogeneities in Semi-Insulating Cd(Zn)Te

Fochuk, P.; Nykoniuk, Y.; Zakharuk, Z.; Kopach, O.; Kovalenko, N.; Bolotnikov, A. E.; James, Ralph B.

doi:10.1109/TNS.2017.2748700

Title: Microinhomogeneities in Semi-Insulating Cd(Zn)Te

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Abstract

Here, we investigated the temperature dependences (TDs) in the range of 290-423 K for the Hall constant R_H and the Hall carrier mobility μn (σ R_H) in semi-insulating Cd_0.9 Zn_0.1 Te:In (CZT) crystals. As-grown, CZT material has nonequilibrium distributions of native and impurity-related defects. Thus, before taking any measurements, the samples were kept inside the test chamber in the dark at 423 K to reach an equilibrium state at T <; 423 K. For all the tested samples, the R_H TD could be described by two activation energies. At the transitional point, the TD of the carrier mobility also changes from “normal” at high temperatures to “exponential” at low temperatures. The latter is a result of the collective effect of drift barriers due to microinhomogeneity. Therefore, only the high-temperature activation energies can be assigned to the ionization energies of the compensated deep donors (ε_D). For different samples, the values for ε_D⁰ (at absolute zero) were found to be in the range of 0.50-0.78 eV, and the degree of donor compensation [D⁺]/[D] is between 0.3 and 0.98. The low-temperature region, where there are strong effects of crystal microinhomogeneities, cannot be used to characterize the ionization energy of donors. Therefore, we describemore »« less

Authors:

^[1]; Nykoniuk, Y. ^[2]; Zakharuk, Z. ^[1]; Kopach, O. ^[1]; Kovalenko, N. ^[3]; Bolotnikov, A. E. ^[4]; James, Ralph B. ^[4]

Chernivtsi National Univ., Chernivtsi (Ukraine)
National Univ. of Water Management and Natural Resources Use, Rivne (Ukraine)
Institute of Single Crystals NASU, Kharkiv (Ukraine)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Publication Date:: Mon Sep 04 00:00:00 EDT 2017

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)

OSTI Identifier:: 1412784

Report Number(s):: BNL-114808-2017-JA
Journal ID: ISSN 0018-9499; R&D Project: 21746; TRN: US1800364

Grant/Contract Number:: SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 64; Journal Issue: 10; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Cd(Zn)Te; defects; electrical characterization (EC); Hall effect; semiconductor

Citation Formats


                    Fochuk, P., Nykoniuk, Y., Zakharuk, Z., Kopach, O., Kovalenko, N., Bolotnikov, A. E., and James, Ralph B. Microinhomogeneities in Semi-Insulating Cd(Zn)Te.  United States: N. p., 2017. 
Web.  doi:10.1109/TNS.2017.2748700.

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                    Fochuk, P., Nykoniuk, Y., Zakharuk, Z., Kopach, O., Kovalenko, N., Bolotnikov, A. E., & James, Ralph B. Microinhomogeneities in Semi-Insulating Cd(Zn)Te.  United States.  https://doi.org/10.1109/TNS.2017.2748700

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                    Fochuk, P., Nykoniuk, Y., Zakharuk, Z., Kopach, O., Kovalenko, N., Bolotnikov, A. E., and James, Ralph B. Mon .  
"Microinhomogeneities in Semi-Insulating Cd(Zn)Te".  United States.  https://doi.org/10.1109/TNS.2017.2748700.  https://www.osti.gov/servlets/purl/1412784.

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@article{osti_1412784,

  title        = {Microinhomogeneities in Semi-Insulating Cd(Zn)Te},

  author       = {Fochuk, P. and Nykoniuk, Y. and Zakharuk, Z. and Kopach, O. and Kovalenko, N. and Bolotnikov, A. E. and James, Ralph B.},

  abstractNote = {Here, we investigated the temperature dependences (TDs) in the range of 290-423 K for the Hall constant RH and the Hall carrier mobility μn (σ RH) in semi-insulating Cd0.9 Zn0.1 Te:In (CZT) crystals. As-grown, CZT material has nonequilibrium distributions of native and impurity-related defects. Thus, before taking any measurements, the samples were kept inside the test chamber in the dark at 423 K to reach an equilibrium state at T <; 423 K. For all the tested samples, the RH TD could be described by two activation energies. At the transitional point, the TD of the carrier mobility also changes from “normal” at high temperatures to “exponential” at low temperatures. The latter is a result of the collective effect of drift barriers due to microinhomogeneity. Therefore, only the high-temperature activation energies can be assigned to the ionization energies of the compensated deep donors (εD). For different samples, the values for εD0 (at absolute zero) were found to be in the range of 0.50-0.78 eV, and the degree of donor compensation [D+]/[D] is between 0.3 and 0.98. The low-temperature region, where there are strong effects of crystal microinhomogeneities, cannot be used to characterize the ionization energy of donors. Therefore, we describe the activation energy as ε1 = εD - αεb, where εb is the drift barrier height found from the TD of the carrier mobility and α takes a value close to unity. Values of εb for our studied samples lie within (0.05-0.35) eV.},

  doi          = {10.1109/TNS.2017.2748700},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 10,

  volume       = 64,

  place        = {United States},

  year         = {Mon Sep 04 00:00:00 EDT 2017},

  month        = {Mon Sep 04 00:00:00 EDT 2017}

}

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