Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain

Wang, Liang; Zhang, En Xia; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Duan, Guo Xing; Hachtel, Jordan A.; Zhang, Cher Xuan; Reed, Robert A.; Samsel, Isaak K.; Alles, Michael L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Chisholm, Matthew F.; Pantelides, Sokrates T.; Galloway, Kenneth F.

doi:10.1109/TNS.2015.2489019

Title: Total Ionizing Dose Effects on Ge Channel $$p$$FETs with Raised $${\rm Si}_{0.55}{\rm Ge}_{0.45}$$ Source/Drain

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Abstract

Here, the total ionizing dose response of Ge channel pFETs with raised Si_0.55Ge_0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

Authors:

Wang, Liang ^[1]; Zhang, En Xia ^[2]; Schrimpf, Ronald D. ^[2]; Fleetwood, Daniel M. ^[2]; Duan, Guo Xing ^[2];

^[2]; Zhang, Cher Xuan ^[2]; Reed, Robert A. ^[2]; Samsel, Isaak K. ^[2]; Alles, Michael L. ^[2]; Witters, Liesbeth ^[3]; Collaert, Nadine ^[3]; Linten, Dimitri ^[3]; Mitard, Jerome ^[3];

^[4]; Pantelides, Sokrates T. ^[2]; Galloway, Kenneth F. ^[2]

Beijing Microelectronics Technology Institute, Beijing (China)
Vanderbilt Univ., Nashville, TN (United States)
Imec, Leuven (Belgium)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: Thu Dec 17 00:00:00 EST 2015

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1399555

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 62; Journal Issue: 6; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; Ge pFET; negative bias temperature instability (NBTI); radiation-induced leakage; threshold-voltage shift; total ionizing dose (TID); transconductance degradation

Citation Formats


                    Wang, Liang, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Duan, Guo Xing, Hachtel, Jordan A., Zhang, Cher Xuan, Reed, Robert A., Samsel, Isaak K., Alles, Michael L., Witters, Liesbeth, Collaert, Nadine, Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, Sokrates T., and Galloway, Kenneth F. Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain.  United States: N. p., 2015. 
Web.  doi:10.1109/TNS.2015.2489019.

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                    Wang, Liang, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Duan, Guo Xing, Hachtel, Jordan A., Zhang, Cher Xuan, Reed, Robert A., Samsel, Isaak K., Alles, Michael L., Witters, Liesbeth, Collaert, Nadine, Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, Sokrates T., & Galloway, Kenneth F. Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain.  United States.  https://doi.org/10.1109/TNS.2015.2489019

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                    Wang, Liang, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Duan, Guo Xing, Hachtel, Jordan A., Zhang, Cher Xuan, Reed, Robert A., Samsel, Isaak K., Alles, Michael L., Witters, Liesbeth, Collaert, Nadine, Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, Sokrates T., and Galloway, Kenneth F. Thu .  
"Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain".  United States.  https://doi.org/10.1109/TNS.2015.2489019.  https://www.osti.gov/servlets/purl/1399555.

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@article{osti_1399555,

  title        = {Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain},

  author       = {Wang, Liang and Zhang, En Xia and Schrimpf, Ronald D. and Fleetwood, Daniel M. and Duan, Guo Xing and Hachtel, Jordan A. and Zhang, Cher Xuan and Reed, Robert A. and Samsel, Isaak K. and Alles, Michael L. and Witters, Liesbeth and Collaert, Nadine and Linten, Dimitri and Mitard, Jerome and Chisholm, Matthew F. and Pantelides, Sokrates T. and Galloway, Kenneth F.},

  abstractNote = {Here, the total ionizing dose response of Ge channel pFETs with raised Si0.55Ge0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.},

  doi          = {10.1109/TNS.2015.2489019},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 6,

  volume       = 62,

  place        = {United States},

  year         = {Thu Dec 17 00:00:00 EST 2015},

  month        = {Thu Dec 17 00:00:00 EST 2015}

}

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