DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Phonons in Si 24 at simultaneously elevated temperature and pressure

Abstract

Raman spectroscopy was used to measure the frequencies of phonons in Si 24 with an open clathrate structure at temperatures ranging from 80 to 400 K with simultaneous pressures of 0 to 8 GPa. The frequency shifts of the different phonons were substantially different under either temperature or pressure. The quasiharmonic behavior was isolated by varying pressure at low temperatures, and the anharmonic behavior was isolated by varying temperature at low pressures. Phonon modes dominated by bond bending were anomalous, showing stiffening with temperature and softening with pressure. Both the quasiharmonic behavior and the anharmonic behavior changed markedly with simultaneous changes in temperature Δ T and pressure Δ P . With Δ T = 320 K and Δ P = 8 GPa , some frequency shifts that scaled with the product Δ T Δ P were as large as the shifts from Δ T and Δ P alone. The thermodynamic entropy of this material likely has a dependence on Δ T and Δ P that cannot be obtained by adding effects from quasiharmonicity and phonon-phonon anharmonicity.

Authors:
 [1];  [1];  [1];  [2];  [2];  [3]
  1. California Inst. of Technology (CalTech), Pasadena, CA (United States)
  2. Carnegie Inst. of Washington, Washington, DC (United States)
  3. Carnegie Inst. of Washington, Washington, DC (United States); Center for High Pressure Sciecne and Technology Advanced Research (HPSTAR), Shanghai (China)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1388065
Alternate Identifier(s):
OSTI ID: 1347809
Grant/Contract Number:  
SC0001057
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 9; Related Information: EFree partners with Carnegie Institution of Washington (lead); California Institute of Technology; Colorado School of Mines; Cornell University; Lehigh University; Pennsylvania State University; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; catalysis (heterogeneous), solar (photovoltaic), phonons, thermoelectric, energy storage (including batteries and capacitors), hydrogen and fuel cells, superconductivity, charge transport, mesostructured materials, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Tong, Xiao, Xu, Xiaolin, Fultz, B., Zhang, Haidong, Strobel, Timothy A., and Kim, Duck Young. Phonons in Si24 at simultaneously elevated temperature and pressure. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.094306.
Tong, Xiao, Xu, Xiaolin, Fultz, B., Zhang, Haidong, Strobel, Timothy A., & Kim, Duck Young. Phonons in Si24 at simultaneously elevated temperature and pressure. United States. https://doi.org/10.1103/PhysRevB.95.094306
Tong, Xiao, Xu, Xiaolin, Fultz, B., Zhang, Haidong, Strobel, Timothy A., and Kim, Duck Young. Mon . "Phonons in Si24 at simultaneously elevated temperature and pressure". United States. https://doi.org/10.1103/PhysRevB.95.094306. https://www.osti.gov/servlets/purl/1388065.
@article{osti_1388065,
title = {Phonons in Si24 at simultaneously elevated temperature and pressure},
author = {Tong, Xiao and Xu, Xiaolin and Fultz, B. and Zhang, Haidong and Strobel, Timothy A. and Kim, Duck Young},
abstractNote = {Raman spectroscopy was used to measure the frequencies of phonons in Si 24 with an open clathrate structure at temperatures ranging from 80 to 400 K with simultaneous pressures of 0 to 8 GPa. The frequency shifts of the different phonons were substantially different under either temperature or pressure. The quasiharmonic behavior was isolated by varying pressure at low temperatures, and the anharmonic behavior was isolated by varying temperature at low pressures. Phonon modes dominated by bond bending were anomalous, showing stiffening with temperature and softening with pressure. Both the quasiharmonic behavior and the anharmonic behavior changed markedly with simultaneous changes in temperature Δ T and pressure Δ P . With Δ T = 320 K and Δ P = 8 GPa , some frequency shifts that scaled with the product Δ T Δ P were as large as the shifts from Δ T and Δ P alone. The thermodynamic entropy of this material likely has a dependence on Δ T and Δ P that cannot be obtained by adding effects from quasiharmonicity and phonon-phonon anharmonicity.},
doi = {10.1103/PhysRevB.95.094306},
journal = {Physical Review B},
number = 9,
volume = 95,
place = {United States},
year = {Mon Mar 20 00:00:00 EDT 2017},
month = {Mon Mar 20 00:00:00 EDT 2017}
}

Journal Article:

Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Statistical Physics of Crystals and Liquids
book, January 2003


High Pressure Behavior of Silicon Clathrates: A New Class of Low Compressibility Materials
journal, December 1999


Optical gain and stimulated emission in periodic nanopatterned crystalline silicon
journal, November 2005

  • Cloutier, Sylvain G.; Kossyrev, Pavel A.; Xu, Jimmy
  • Nature Materials, Vol. 4, Issue 12
  • DOI: 10.1038/nmat1530

Low-density silicon allotropes for photovoltaic applications
journal, July 2015


Negative thermal expansion: a review
journal, July 2009


Raman scattering and phonon dispersion in Si and GaP at very high pressure
journal, August 1975


Introduction to Lattice Dynamics
book, February 2010


An efficient room-temperature silicon-based light-emitting diode
journal, March 2001

  • Ng, Wai Lek; Lourenço, M. A.; Gwilliam, R. M.
  • Nature, Vol. 410, Issue 6825
  • DOI: 10.1038/35065571

Low-energy silicon allotropes with strong absorption in the visible for photovoltaic applications
journal, September 2012


Temperature Dependence of Raman Scattering in Silicon
journal, January 1970


Phonon anharmonicity in silicon from 100 to 1500 K
journal, January 2015


The lattice dynamics of an anharmonic crystal
journal, October 1963


Generalized evolutionary metadynamics for sampling the energy landscapes and its applications
journal, July 2015


Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
journal, January 1972

  • Cerdeira, F.; Buchenauer, C. J.; Pollak, Fred H.
  • Physical Review B, Vol. 5, Issue 2
  • DOI: 10.1103/PhysRevB.5.580

Negative Thermal Expansion from 0.3 to 1050 Kelvin in ZrW2O8
journal, April 1996


Low-energy tetrahedral polymorphs of carbon, silicon, and germanium
journal, June 2015


Theory of the thermal expansion of Si and diamond
journal, February 1991


Structural Relationship between Negative Thermal Expansion and Quartic Anharmonicity of Cubic ScF 3
journal, November 2011


Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
journal, May 1994

  • Zheng, B.; Michel, J.; Ren, F. Y. G.
  • Applied Physics Letters, Vol. 64, Issue 21
  • DOI: 10.1063/1.111977

Vibrational thermodynamics of materials
journal, May 2010


Nanocavity brightens silicon
journal, March 2013


Scattering of Neutrons by an Anharmonic Crystal
journal, December 1962


Na-Si Clathrates Are High-Pressure Phases: A Melt-Based Route to Control Stoichiometry and Properties
journal, December 2012

  • Kurakevych, Oleksandr O.; Strobel, Timothy A.; Kim, Duck Young
  • Crystal Growth & Design, Vol. 13, Issue 1, p. 303-307
  • DOI: 10.1021/cg3017084

Thermal properties of Si 136 : Theoretical and experimental study of the type-II clathrate polymorph of Si
journal, July 2006


Calibration of the ruby pressure gauge to 800 kbar under quasi-hydrostatic conditions
journal, January 1986

  • Mao, H. K.; Xu, J.; Bell, P. M.
  • Journal of Geophysical Research, Vol. 91, Issue B5, p. 4673-4676
  • DOI: 10.1029/JB091iB05p04673

Synthesis of an open-framework allotrope of silicon
journal, November 2014

  • Kim, Duck Young; Stefanoski, Stevce; Kurakevych, Oleksandr O.
  • Nature Materials, Vol. 14, Issue 2
  • DOI: 10.1038/nmat4140

Pathways to exotic metastable silicon allotropes
journal, December 2016

  • Haberl, Bianca; Strobel, Timothy A.; Bradby, Jodie E.
  • Applied Physics Reviews, Vol. 3, Issue 4
  • DOI: 10.1063/1.4962984