Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3

Hassanpour, E.; Wegmayr, V.; Schaab, J.; Yan, Z.; Bourret, E.; Lottermoser, Th; Fiebig, M.; Meier, D.

doi:10.1088/1367-2630/18/4/043015

Title: Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO ₃

Abstract

We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO ₃ . Hole- and electron doping are achieved through the growth of Er _1-x Ca _x MnO ₃ and Er _1-x Zr _x MnO ₃ single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO ₃ without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for nonperturbative property-engineering of intrinsic domain states in this important class of multiferroics.

Authors:

Hassanpour, E. ^[1]; Wegmayr, V. ^[1]; Schaab, J. ^[1]; Yan, Z. ^[2]; Bourret, E. ^[2]; Lottermoser, Th ^[1]; Fiebig, M. ^[1]; Meier, D. ^[1]

ETH Zurich (Netherlands). Dept. of Materials
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division

Publication Date:: Tue Apr 12 00:00:00 EDT 2016

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1379262

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: New Journal of Physics

Additional Journal Information:: Journal Volume: 18; Journal Issue: 4; Journal ID: ISSN 1367-2630

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; multiferroics; domain engineering; piezoresponse force microscopy; second harmonic generation

Citation Formats


                    Hassanpour, E., Wegmayr, V., Schaab, J., Yan, Z., Bourret, E., Lottermoser, Th, Fiebig, M., and Meier, D. Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3.  United States: N. p., 2016. 
Web.  doi:10.1088/1367-2630/18/4/043015.

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                    Hassanpour, E., Wegmayr, V., Schaab, J., Yan, Z., Bourret, E., Lottermoser, Th, Fiebig, M., & Meier, D. Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3.  United States.  https://doi.org/10.1088/1367-2630/18/4/043015

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                    Hassanpour, E., Wegmayr, V., Schaab, J., Yan, Z., Bourret, E., Lottermoser, Th, Fiebig, M., and Meier, D. Tue .  
"Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3".  United States.  https://doi.org/10.1088/1367-2630/18/4/043015.  https://www.osti.gov/servlets/purl/1379262.

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@article{osti_1379262,

  title        = {Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3},

  author       = {Hassanpour, E. and Wegmayr, V. and Schaab, J. and Yan, Z. and Bourret, E. and Lottermoser, Th and Fiebig, M. and Meier, D.},

  abstractNote = {We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO 3 . Hole- and electron doping are achieved through the growth of Er 1-x Ca x MnO 3 and Er 1-x Zr x MnO 3 single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO 3 without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for nonperturbative property-engineering of intrinsic domain states in this important class of multiferroics.},

  doi          = {10.1088/1367-2630/18/4/043015},

  journal      = {New Journal of Physics},

  number       = 4,

  volume       = 18,

  place        = {United States},

  year         = {Tue Apr 12 00:00:00 EDT 2016},

  month        = {Tue Apr 12 00:00:00 EDT 2016}

}

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Works referencing / citing this record:

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Oxygen vacancies in the bulk and at neutral domain walls in hexagonal ${YMnO}_{3}$
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Skjærvø, Sandra H.; Småbråten, Didrik R.; Spaldin, Nicola A.
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DOI: 10.1103/physrevb.98.184102

Functional Ferroic Domain Walls for Nanoelectronics
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Electrical half-wave rectification at ferroelectric domain walls
text, January 2018

Schaab, J.; Skjærvø, S. H.; Krohns, S.
arXiv
DOI: 10.48550/arxiv.1803.08253

Functional Ferroic Domain Walls for Nanoelectronics
journal, September 2019

Sharma, Pankaj; Schoenherr, Peggy; Seidel, Jan
Materials, Vol. 12, Issue 18
DOI: 10.3390/ma12182927

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Title: Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO 3

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Title: Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO ₃

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