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Title: Prospective high thermoelectric performance of the heavily p -doped half-Heusler compound CoVSn

Abstract

The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S2σ/τ (with respect to an average unknown scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.

Authors:
 [1];  [2];  [2];  [2];  [3]
  1. Beihang Univ., Beijing (China). Dept. of Physics. Key Lab. of Micro-Nano Measurement-Manipulation and Physics
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  3. Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Missouri, Columbia, MO (United States); Beihang Univ., Beijing (China); Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); Beihang Univ. (China)
OSTI Identifier:
1364324
Alternate Identifier(s):
OSTI ID: 1356728
Grant/Contract Number:  
SC0001299; FG02-09ER46577; AC05-00OR22725; 11604007
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 19; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electronic structure; energy materials; semiconducting systems; condensed matter and materials physics

Citation Formats

Shi, Hongliang, Ming, Wenmei, Parker, David S., Du, Mao-Hua, and Singh, David J. Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.195207.
Shi, Hongliang, Ming, Wenmei, Parker, David S., Du, Mao-Hua, & Singh, David J. Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn. United States. https://doi.org/10.1103/PhysRevB.95.195207
Shi, Hongliang, Ming, Wenmei, Parker, David S., Du, Mao-Hua, and Singh, David J. Thu . "Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn". United States. https://doi.org/10.1103/PhysRevB.95.195207. https://www.osti.gov/servlets/purl/1364324.
@article{osti_1364324,
title = {Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn},
author = {Shi, Hongliang and Ming, Wenmei and Parker, David S. and Du, Mao-Hua and Singh, David J.},
abstractNote = {The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S2σ/τ (with respect to an average unknown scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.},
doi = {10.1103/PhysRevB.95.195207},
journal = {Physical Review B},
number = 19,
volume = 95,
place = {United States},
year = {Thu May 11 00:00:00 EDT 2017},
month = {Thu May 11 00:00:00 EDT 2017}
}

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Cited by: 33 works
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Works referencing / citing this record:

Influence of Pressure on Optical Transparency and High Electrical Conductivity in CoVSn Alloys: DFT Study
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Ti 2 VGe Heuslerene: theoretical prediction of a novel 2D material
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