Spatial luminescence imaging of dopant incorporation in CdTe Films

Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt K.; Al-Jassim, Mowafak

doi:10.1063/1.4974459

Title: Spatial luminescence imaging of dopant incorporation in CdTe Films

Abstract

State-of-the-art cathodoluminescence (CL) spectrum imaging with spectrum-per-pixel CL emission mapping is applied to spatially profile how dopant elements are incorporated into Cadmium telluride (CdTe). Emission spectra and intensity monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on computational modeling. Our results show that grain boundaries play a role in incorporating dopants in CdTe exposed to copper, phosphorus, and intrinsic point defects in CdTe. Furthermore, the image analysis provides critical, unique feedback to understand dopant incorporation and activation in the inhomogeneous CdTe material, which has struggled to reach high levels of hole density.

Authors:

Guthrey, Harvey ^[1]; Moseley, John ^[1]; Colegrove, Eric ^[1]; Burst, James ^[1]; Albin, David ^[1]; Metzger, Wyatt K. ^[1]; Al-Jassim, Mowafak ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Wed Jan 25 00:00:00 EST 2017

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1342822

Alternate Identifier(s):: OSTI ID: 1361747

Report Number(s):: NREL/JA-5K00-67135
Journal ID: ISSN 0021-8979

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 121; Journal Issue: 4; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; cadmium telluride; cathodoluminescence; dopant distribution; grain boundaries

Citation Formats


                    Guthrey, Harvey, Moseley, John, Colegrove, Eric, Burst, James, Albin, David, Metzger, Wyatt K., and Al-Jassim, Mowafak. Spatial luminescence imaging of dopant incorporation in CdTe Films.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4974459.

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                    Guthrey, Harvey, Moseley, John, Colegrove, Eric, Burst, James, Albin, David, Metzger, Wyatt K., & Al-Jassim, Mowafak. Spatial luminescence imaging of dopant incorporation in CdTe Films.  United States.  https://doi.org/10.1063/1.4974459

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                    Guthrey, Harvey, Moseley, John, Colegrove, Eric, Burst, James, Albin, David, Metzger, Wyatt K., and Al-Jassim, Mowafak. Wed .  
"Spatial luminescence imaging of dopant incorporation in CdTe Films".  United States.  https://doi.org/10.1063/1.4974459.  https://www.osti.gov/servlets/purl/1342822.

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@article{osti_1342822,

  title        = {Spatial luminescence imaging of dopant incorporation in CdTe Films},

  author       = {Guthrey, Harvey and Moseley, John and Colegrove, Eric and Burst, James and Albin, David and Metzger, Wyatt K. and Al-Jassim, Mowafak},

  abstractNote = {State-of-the-art cathodoluminescence (CL) spectrum imaging with spectrum-per-pixel CL emission mapping is applied to spatially profile how dopant elements are incorporated into Cadmium telluride (CdTe). Emission spectra and intensity monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on computational modeling. Our results show that grain boundaries play a role in incorporating dopants in CdTe exposed to copper, phosphorus, and intrinsic point defects in CdTe. Furthermore, the image analysis provides critical, unique feedback to understand dopant incorporation and activation in the inhomogeneous CdTe material, which has struggled to reach high levels of hole density.},

  doi          = {10.1063/1.4974459},

  journal      = {Journal of Applied Physics},

  number       = 4,

  volume       = 121,

  place        = {United States},

  year         = {Wed Jan 25 00:00:00 EST 2017},

  month        = {Wed Jan 25 00:00:00 EST 2017}

}

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Works referenced in this record:

Post-growth doping of bulk CdTe crystals with phosphorus
journal, February 1992

Alnajjar, A. A.; Watson, C. C. R.; Brinkman, A. W.
Journal of Crystal Growth, Vol. 117, Issue 1-4
DOI: 10.1016/0022-0248(92)90780-M

Evidence of a deep donor in CdTe
journal, February 1992

Kuhn, T. A.; Ossau, W.; Waag, A.
Journal of Crystal Growth, Vol. 117, Issue 1-4
DOI: 10.1016/0022-0248(92)90832-4

Single-crystal CdTe solar cells with V _oc greater than 900 mV
journal, August 2014

Duenow, J. N.; Burst, J. M.; Albin, D. S.
Applied Physics Letters, Vol. 105, Issue 5
DOI: 10.1063/1.4892401

Recombination by grain-boundary type in CdTe
journal, July 2015

Moseley, John; Metzger, Wyatt K.; Moutinho, Helio R.
Journal of Applied Physics, Vol. 118, Issue 2
DOI: 10.1063/1.4926726

Photoluminescence studies in N, P, As implanted cadmium telluride
journal, December 1983

Molva, E.; Saminadayar, K.; Pautrat, J. L.
Solid State Communications, Vol. 48, Issue 11
DOI: 10.1016/0038-1098(83)90539-2

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002

Wei, Su-Huai; Zhang, S. B.
Physical Review B, Vol. 66, Issue 15
DOI: 10.1103/PhysRevB.66.155211

Luminescence study of copper‐implanted and rapid‐thermal‐annealed cadmium telluride
journal, July 1988

James, K. M.; Merz, J. L.; Jones, C. E.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 6, Issue 4
DOI: 10.1116/1.575527

Identification of Cu and Ag acceptors in CdTe
journal, September 1982

Chamonal, J. P.; Molva, E.; Pautrat, J. L.
Solid State Communications, Vol. 43, Issue 11
DOI: 10.1016/0038-1098(82)90843-2

Localized defects in p-CdTe:Cu doped by copper incorporation during Bridgman growth
journal, September 1988

Laurenti, J. P.; Bastide, G.; Rouzeyre, M.
Solid State Communications, Vol. 67, Issue 12
DOI: 10.1016/0038-1098(88)91069-1

Solar cell efficiency tables (version 47): Solar cell efficiency tables
journal, November 2015

Green, Martin A.; Emery, Keith; Hishikawa, Yoshihiro
Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 1
DOI: 10.1002/pip.2728

Phosphorus implanted cadmium telluride solar cells
journal, August 2011

Kraft, C.; Brömel, A.; Schönherr, S.
Thin Solid Films, Vol. 519, Issue 21
DOI: 10.1016/j.tsf.2011.01.389

Shallow Acceptors in Cadmium Telluride
journal, February 1982

Molva, F.; Chamonal, J. P.; Pautrat, J. L.
physica status solidi (b), Vol. 109, Issue 2
DOI: 10.1002/pssb.2221090222

Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells
journal, September 2000

Grecu, D.; Compaan, A. D.; Young, D.
Journal of Applied Physics, Vol. 88, Issue 5
DOI: 10.1063/1.1287414

Excited states of Ag and Cu acceptors in CdTe
journal, October 1982

Molva, E.; Chamonal, J. P.; Milchberg, G.
Solid State Communications, Vol. 44, Issue 3
DOI: 10.1016/0038-1098(82)90869-9

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon
journal, July 2003

Lu, Jinggang; Wagener, Magnus; Rozgonyi, George
Journal of Applied Physics, Vol. 94, Issue 1
DOI: 10.1063/1.1578699

Direct Imaging of Cl- and Cu-Induced Short-Circuit Efficiency Changes in CdTe Solar Cells
journal, May 2014

Poplawsky, Jonathan D.; Paudel, Naba R.; Li, Chen
Advanced Energy Materials, Vol. 4, Issue 15
DOI: 10.1002/aenm.201400454

CdTe solar cells with open-circuit voltage breaking the 1 V barrier
journal, February 2016

Burst, J. M.; Duenow, J. N.; Albin, D. S.
Nature Energy, Vol. 1, Issue 3
DOI: 10.1038/nenergy.2016.15

The impact of Cu on recombination in high voltage CdTe solar cells
journal, December 2015

Kuciauskas, Darius; Dippo, Pat; Kanevce, Ana
Applied Physics Letters, Vol. 107, Issue 24
DOI: 10.1063/1.4938127

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe
journal, November 2016

Burst, James M.; Farrell, Stuart B.; Albin, David S.
APL Materials, Vol. 4, Issue 11
DOI: 10.1063/1.4966209

Correlative impurity distribution analysis in cadmium telluride (CdTe) thin-film solar cells by ToF-SIMS 2D imaging
journal, December 2016

Mao, Dan; Blatz, Graham; Wickersham, C. E.
Solar Energy Materials and Solar Cells, Vol. 157
DOI: 10.1016/j.solmat.2016.05.019

Acceptor states in CdTe and comparison with ZnTe. General trends
journal, September 1984

Molva, E.; Pautrat, J. L.; Saminadayar, K.
Physical Review B, Vol. 30, Issue 6
DOI: 10.1103/PhysRevB.30.3344

Photoluminescence and recombination centers in phosphorus-doped and undoped CdTe heat-treated under component vapour pressures
journal, July 1980

Saraie, J.; Shinohara, H.; Edamatsu, H.
Journal of Luminescence, Vol. 21, Issue 4
DOI: 10.1016/0022-2313(80)90026-5

Solar cell efficiency tables
journal, January 1993

Green, Martin A.; Emery, Keith
Progress in Photovoltaics: Research and Applications, Vol. 1, Issue 1
DOI: 10.1002/pip.4670010104

Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe
journal, June 2011

Ma, Jie; Wei, Su-Huai; Gessert, T. A.
Physical Review B, Vol. 83, Issue 24
DOI: 10.1103/PhysRevB.83.245207

Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels
journal, September 2016

Moseley, John; Al-Jassim, Mowafak M.; Guthrey, Harvey L.
Journal of Applied Physics, Vol. 120, Issue 10
DOI: 10.1063/1.4962286

Optical investigations of defects in ${Cd}_{1 - x}$ ${Zn}_{x}$ Te
journal, April 1995

Stadler, W.; Hofmann, D. M.; Alt, H. C.
Physical Review B, Vol. 51, Issue 16
DOI: 10.1103/PhysRevB.51.10619

Scanning Electron Acoustic Microscopy
book, January 1988

Balk, Ludwig Josef
Advances in Electronics and Electron Physics Volume 71
DOI: 10.1016/S0065-2539(08)60900-2

Works referencing / citing this record:

Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells
journal, August 2019

Metzger, W. K.; Grover, S.; Lu, D.
Nature Energy, Vol. 4, Issue 10
DOI: 10.1038/s41560-019-0446-7

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Similar Records

Title: Spatial luminescence imaging of dopant incorporation in CdTe Films

Abstract

Citation Formats

Post-growth doping of bulk CdTe crystals with phosphorus journal, February 1992

Evidence of a deep donor in CdTe journal, February 1992

Single-crystal CdTe solar cells with V oc greater than 900 mV journal, August 2014

Recombination by grain-boundary type in CdTe journal, July 2015

Photoluminescence studies in N, P, As implanted cadmium telluride journal, December 1983

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe journal, October 2002

Luminescence study of copper‐implanted and rapid‐thermal‐annealed cadmium telluride journal, July 1988

Identification of Cu and Ag acceptors in CdTe journal, September 1982

Localized defects in p-CdTe:Cu doped by copper incorporation during Bridgman growth journal, September 1988

Solar cell efficiency tables (version 47): Solar cell efficiency tables journal, November 2015

Phosphorus implanted cadmium telluride solar cells journal, August 2011

Shallow Acceptors in Cadmium Telluride journal, February 1982

Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells journal, September 2000

Excited states of Ag and Cu acceptors in CdTe journal, October 1982

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon journal, July 2003

Direct Imaging of Cl- and Cu-Induced Short-Circuit Efficiency Changes in CdTe Solar Cells journal, May 2014

CdTe solar cells with open-circuit voltage breaking the 1 V barrier journal, February 2016

The impact of Cu on recombination in high voltage CdTe solar cells journal, December 2015

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe journal, November 2016

Correlative impurity distribution analysis in cadmium telluride (CdTe) thin-film solar cells by ToF-SIMS 2D imaging journal, December 2016

Acceptor states in CdTe and comparison with ZnTe. General trends journal, September 1984

Photoluminescence and recombination centers in phosphorus-doped and undoped CdTe heat-treated under component vapour pressures journal, July 1980

Solar cell efficiency tables journal, January 1993

Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe journal, June 2011

Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels journal, September 2016

Optical investigations of defects in Cd 1 − x Zn x Te journal, April 1995

Scanning Electron Acoustic Microscopy book, January 1988

Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells journal, August 2019

Post-growth doping of bulk CdTe crystals with phosphorus
journal, February 1992

Evidence of a deep donor in CdTe
journal, February 1992

Single-crystal CdTe solar cells with V _oc greater than 900 mV
journal, August 2014

Recombination by grain-boundary type in CdTe
journal, July 2015

Photoluminescence studies in N, P, As implanted cadmium telluride
journal, December 1983

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002

Luminescence study of copper‐implanted and rapid‐thermal‐annealed cadmium telluride
journal, July 1988

Identification of Cu and Ag acceptors in CdTe
journal, September 1982

Localized defects in p-CdTe:Cu doped by copper incorporation during Bridgman growth
journal, September 1988

Solar cell efficiency tables (version 47): Solar cell efficiency tables
journal, November 2015

Phosphorus implanted cadmium telluride solar cells
journal, August 2011

Shallow Acceptors in Cadmium Telluride
journal, February 1982

Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells
journal, September 2000

Excited states of Ag and Cu acceptors in CdTe
journal, October 1982

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon
journal, July 2003

Direct Imaging of Cl- and Cu-Induced Short-Circuit Efficiency Changes in CdTe Solar Cells
journal, May 2014

CdTe solar cells with open-circuit voltage breaking the 1 V barrier
journal, February 2016

The impact of Cu on recombination in high voltage CdTe solar cells
journal, December 2015

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe
journal, November 2016

Correlative impurity distribution analysis in cadmium telluride (CdTe) thin-film solar cells by ToF-SIMS 2D imaging
journal, December 2016

Acceptor states in CdTe and comparison with ZnTe. General trends
journal, September 1984

Photoluminescence and recombination centers in phosphorus-doped and undoped CdTe heat-treated under component vapour pressures
journal, July 1980

Solar cell efficiency tables
journal, January 1993

Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe
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Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels
journal, September 2016

Optical investigations of defects in ${Cd}_{1 - x}$ ${Zn}_{x}$ Te
journal, April 1995

Scanning Electron Acoustic Microscopy
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