Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth
Abstract
Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.
- Authors:
-
- Nanyang Technological Univ. (Singapore). School of Physical and Mathematical Sciences. Division of Physics and Applied Physics
- Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering
- Nanyang Technological Univ. (Singapore). School of Electrical and Electronic Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
- King Abdullah Univ. of Science and Technology, Thuwal (Saudi Arabia). Materials Science and Engineering
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of California, San Diego, CA (United States); King Abdullah University of Science and Technology (KAUST), Thuwal (Saudi Arabia)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Contributing Org.:
- Nanyang Technological Univ. (Singapore)
- OSTI Identifier:
- 1340236
- Report Number(s):
- SAND2016-2941J
Journal ID: ISSN 1530-6984; 637545
- Grant/Contract Number:
- AC04-94AL85000; AC52-06NA25396; ECCS-1351980; DMR-1503595
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 16; Journal Issue: 7; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; Gibbs-Thomson effect; In2O3; ITO; nanowire; surface energy; vapor-liquid-solid mechanism
Citation Formats
Shen, Youde, Chen, Renjie, Yu, Xuechao, Wang, Qijie, Jungjohann, Katherine L., Dayeh, Shadi A., and Wu, Tom. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth. United States: N. p., 2016.
Web. doi:10.1021/acs.nanolett.6b01037.
Shen, Youde, Chen, Renjie, Yu, Xuechao, Wang, Qijie, Jungjohann, Katherine L., Dayeh, Shadi A., & Wu, Tom. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth. United States. https://doi.org/10.1021/acs.nanolett.6b01037
Shen, Youde, Chen, Renjie, Yu, Xuechao, Wang, Qijie, Jungjohann, Katherine L., Dayeh, Shadi A., and Wu, Tom. Thu .
"Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth". United States. https://doi.org/10.1021/acs.nanolett.6b01037. https://www.osti.gov/servlets/purl/1340236.
@article{osti_1340236,
title = {Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth},
author = {Shen, Youde and Chen, Renjie and Yu, Xuechao and Wang, Qijie and Jungjohann, Katherine L. and Dayeh, Shadi A. and Wu, Tom},
abstractNote = {Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.},
doi = {10.1021/acs.nanolett.6b01037},
journal = {Nano Letters},
number = 7,
volume = 16,
place = {United States},
year = {Thu Jun 02 00:00:00 EDT 2016},
month = {Thu Jun 02 00:00:00 EDT 2016}
}
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