Crystal structure of laser-induced subsurface modifications in Si
Abstract
Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.
- Authors:
-
- Univ. of Twente, Enschede (Netherlands). Faculty of Engineering Technology. Chair of Applied Laser Technology
- Australian National Univ., Canberra, ACT (Australia). Research School of Physics and Engineering
- Australian National Univ., Canberra, ACT (Australia). Research School of Physics and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical and Engineering Materials Division
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- Contributing Org.:
- Univ. of Twente, Enschede (Netherlands); Australian National Univ., Canberra, ACT (Australia)
- OSTI Identifier:
- 1265519
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics. A, Materials Science and Processing
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 2; Journal ID: ISSN 0947-8396
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
Citation Formats
Verburg, P. C., Smillie, L. A., Römer, G. R. B. E., Haberl, B., Bradby, J. E., Williams, J. S., and Huis in ’t Veld, A. J. Crystal structure of laser-induced subsurface modifications in Si. United States: N. p., 2015.
Web. doi:10.1007/s00339-015-9238-5.
Verburg, P. C., Smillie, L. A., Römer, G. R. B. E., Haberl, B., Bradby, J. E., Williams, J. S., & Huis in ’t Veld, A. J. Crystal structure of laser-induced subsurface modifications in Si. United States. https://doi.org/10.1007/s00339-015-9238-5
Verburg, P. C., Smillie, L. A., Römer, G. R. B. E., Haberl, B., Bradby, J. E., Williams, J. S., and Huis in ’t Veld, A. J. Thu .
"Crystal structure of laser-induced subsurface modifications in Si". United States. https://doi.org/10.1007/s00339-015-9238-5. https://www.osti.gov/servlets/purl/1265519.
@article{osti_1265519,
title = {Crystal structure of laser-induced subsurface modifications in Si},
author = {Verburg, P. C. and Smillie, L. A. and Römer, G. R. B. E. and Haberl, B. and Bradby, J. E. and Williams, J. S. and Huis in ’t Veld, A. J.},
abstractNote = {Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.},
doi = {10.1007/s00339-015-9238-5},
journal = {Applied Physics. A, Materials Science and Processing},
number = 2,
volume = 120,
place = {United States},
year = {Thu Jun 04 00:00:00 EDT 2015},
month = {Thu Jun 04 00:00:00 EDT 2015}
}
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Works referencing / citing this record:
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