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Title: Electronic structure basis for the extraordinary magnetoresistance in WTe 2

Abstract

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe₂ was identified.

Authors:
 [1];  [2];  [3];  [2];  [4]
+ Show Author Affiliations
  1. Princeton Univ., Princeton, NJ (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Princeton Univ., Princeton, NJ (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1182491
Alternate Identifier(s):
OSTI ID: 1180720
Report Number(s):
BNL-107361-2015-JA
Journal ID: ISSN 0031-9007; PRLTAO; R&D Project: PO016; KC0202020
Grant/Contract Number:  
SC00112704; AC02-98CH10886; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 21; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Pletikosić, I., Ali, Mazhar N., Fedorov, A. V., Cava, R. J., and Valla, T. Electronic structure basis for the extraordinary magnetoresistance in WTe2. United States: N. p., 2014. Web. doi:10.1103/PhysRevLett.113.216601.
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Pletikosić, I., Ali, Mazhar N., Fedorov, A. V., Cava, R. J., & Valla, T. Electronic structure basis for the extraordinary magnetoresistance in WTe2. United States. https://doi.org/10.1103/PhysRevLett.113.216601
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Pletikosić, I., Ali, Mazhar N., Fedorov, A. V., Cava, R. J., and Valla, T. Wed . "Electronic structure basis for the extraordinary magnetoresistance in WTe2". United States. https://doi.org/10.1103/PhysRevLett.113.216601. https://www.osti.gov/servlets/purl/1182491.
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@article{osti_1182491,
title = {Electronic structure basis for the extraordinary magnetoresistance in WTe2},
author = {Pletikosić, I. and Ali, Mazhar N. and Fedorov, A. V. and Cava, R. J. and Valla, T.},
abstractNote = {The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe₂ was identified.},
doi = {10.1103/PhysRevLett.113.216601},
journal = {Physical Review Letters},
number = 21,
volume = 113,
place = {United States},
year = {Wed Nov 19 00:00:00 EST 2014},
month = {Wed Nov 19 00:00:00 EST 2014}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.113.216601
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