High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

Allemang, Christopher R.; Lidsky, David; Sharma, Peter; Liu, Shang; Liu, Jifeng; Qiu, Yunsheng; Yu, Shuiqing; Lu, Tzu‐Ming

doi:10.1002/aelm.202500460

Title: High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

Journal Article · Thu Oct 09 00:00:00 UTC 2025 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.202500460 · OSTI ID:2998782

^[1]; Lidsky, David ^[2]; Sharma, Peter ^[1]; Liu, Shang ^[3]; Liu, Jifeng ^[3]; Qiu, Yunsheng ^[4]; Yu, Shuiqing ^[4]; Lu, Tzu‐Ming ^[5]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Univ. of New Mexico, Albuquerque, NM (United States)
Dartmouth College, Hanover, NH (United States)
Univ. of Arkansas, Fayetteville, AR (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge_0.945Sn_0.055/Si_0.03Ge_0.93Sn_0.04 and Ge_0.9Sn_0.1/Si_0.017Ge_0.927Sn_0.056, show peak mobilities of 9000 and 19 000 cm²/Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Manipulation of Atomic Ordering for Manufacturing Semiconductors (µ-Atoms); Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525; SC0023412

OSTI ID:: 2998782

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

References (47)

Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures Tai, Chia‐Tse; Chiu, Po‐Yuan; Liu, Chia‐You Advanced Materials https://doi.org/10.1002/adma.202007862	journal	May 2021
A Light‐Hole Germanium Quantum Well on Silicon Assali, Simone; Attiaoui, Anis; Vecchio, Patrick Del Advanced Materials, Vol. 34, Issue 27 https://doi.org/10.1002/adma.202201192	journal	June 2022
Experimental Calibration of Sn-Related Varshni Parameters for High Sn Content GeSn Layers Bertrand, Mathieu; Thai, Quang-Minh; Chrétien, Jérémie Annalen der Physik, Vol. 531, Issue 6 https://doi.org/10.1002/andp.201800396	journal	February 2019
3D Nanoscale Mapping of Short‐Range Order in GeSn Alloys Liu, Shang; Covian, Alejandra Cuervo; Wang, Xiaoxin Small Methods, Vol. 6, Issue 5 https://doi.org/10.1002/smtd.202200029	journal	April 2022
Two-band galvanomagnétic effects in gray tin Lavine, Charles F.; Ewald, A. W. Journal of Physics and Chemistry of Solids, Vol. 32, Issue 6 https://doi.org/10.1016/S0022-3697(71)80170-1	journal	January 1971
A spin-coherent semiconductor photo-detector for quantum communication Vrijen, Rutger; Yablonovitch, Eli Physica E: Low-dimensional Systems and Nanostructures, Vol. 10, Issue 4 https://doi.org/10.1016/S1386-9477(00)00296-4	journal	June 2001
Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric Chu, L. K.; Chiang, T. H.; Lin, T. D. Microelectronic Engineering, Vol. 91 https://doi.org/10.1016/j.mee.2011.10.013	journal	March 2012
Direct Bandgap Group IV Epitaxy on Si for Laser Applications von den Driesch, N.; Stange, D.; Wirths, S. Chemistry of Materials, Vol. 27, Issue 13 https://doi.org/10.1021/acs.chemmater.5b01327	journal	June 2015
Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K Margetis, Joe; Al-Kabi, Sattar; Du, Wei ACS Photonics, Vol. 5, Issue 3 https://doi.org/10.1021/acsphotonics.7b00938	journal	December 2017
GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain Chrétien, Jérémie; Pauc, Nicolas; Armand Pilon, Francesco ACS Photonics, Vol. 6, Issue 10 https://doi.org/10.1021/acsphotonics.9b00712	journal	August 2019
Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications Tran, Huong; Pham, Thach; Margetis, Joe ACS Photonics, Vol. 6, Issue 11 https://doi.org/10.1021/acsphotonics.9b00845	journal	October 2019
Lasing in direct-bandgap GeSn alloy grown on Si Wirths, S.; Geiger, R.; von den Driesch, N. Nature Photonics, Vol. 9, Issue 2 https://doi.org/10.1038/nphoton.2014.321	journal	January 2015
Angular momentum transfer from photon polarization to an electron spin in a gate-defined quantum dot Fujita, Takafumi; Morimoto, Kazuhiro; Kiyama, Haruki Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-10939-x	journal	July 2019
The germanium quantum information route Scappucci, Giordano; Kloeffel, Christoph; Zwanenburg, Floris A. Nature Reviews Materials https://doi.org/10.1038/s41578-020-00262-z	journal	December 2020
Coherent spin–photon coupling using a resonant exchange qubit Landig, A. J.; Koski, J. V.; Scarlino, P. Nature, Vol. 560, Issue 7717 https://doi.org/10.1038/s41586-018-0365-y	journal	July 2018
Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth Dou, Wei; Benamara, Mourad; Mosleh, Aboozar Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-24018-6	journal	April 2018
Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications Hsieh, Yun-Da; Lin, Jun-Han; Soref, Richard Communications Materials, Vol. 2, Issue 1 https://doi.org/10.1038/s43246-021-00144-z	journal	April 2021
Theoretical study of the bandgap regulation of a two-dimensional GeSn alloy under biaxial strain and uniaxial strain along the armchair direction Huang, Wenqi; Yang, Hong; Cheng, Buwen Physical Chemistry Chemical Physics, Vol. 20, Issue 36 https://doi.org/10.1039/C8CP03570A	journal	January 2018
Determination of the MOS oxide capacitance McNutt, M. J.; Sah, C. T. Journal of Applied Physics, Vol. 46, Issue 9 https://doi.org/10.1063/1.322138	journal	September 1975
Electronic band structure and effective mass parameters of Ge _1-x Sn _x alloys Lu Low, Kain; Yang, Yue; Han, Genquan Journal of Applied Physics, Vol. 112, Issue 10 https://doi.org/10.1063/1.4767381	journal	November 2012
Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors Kotlyar, R.; Avci, U. E.; Cea, S. Applied Physics Letters, Vol. 102, Issue 11 https://doi.org/10.1063/1.4798283	journal	March 2013
Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing Tonkikh, Alexander A.; Eisenschmidt, Christian; Talalaev, Vadim G. Applied Physics Letters, Vol. 103, Issue 3 https://doi.org/10.1063/1.4813913	journal	July 2013
Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions Richard D'Costa, Vijay; Subramanian, Sujith; Li, Daosheng Applied Physics Letters, Vol. 104, Issue 23 https://doi.org/10.1063/1.4882917	journal	June 2014
Compositional dependence of the band-gap of Ge1−x−ySixSny alloys Wendav, Torsten; Fischer, Inga A.; Montanari, Michele Applied Physics Letters, Vol. 108, Issue 24 https://doi.org/10.1063/1.4953784	journal	June 2016
Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure Du, Wei; Ghetmiri, Seyed Amir; Margetis, Joe Journal of Applied Physics, Vol. 122, Issue 12 https://doi.org/10.1063/1.4986341	journal	September 2017
Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs Niemeyer, M.; Ohlmann, J.; Walker, A. W. Journal of Applied Physics, Vol. 122, Issue 11 https://doi.org/10.1063/1.5002630	journal	September 2017
Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi Petluru, Priyanka; Grant, Perry C.; Muhowski, Aaron J. Applied Physics Letters, Vol. 117, Issue 6 https://doi.org/10.1063/5.0007275	journal	August 2020
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors Moutanabbir, O.; Assali, S.; Gong, X. Applied Physics Letters, Vol. 118, Issue 11 https://doi.org/10.1063/5.0043511	journal	March 2021
Inverse spin-Hall effect in GeSn Marchionni, A.; Zucchetti, C.; Ciccacci, F. Applied Physics Letters, Vol. 118, Issue 21 https://doi.org/10.1063/5.0046129	journal	May 2021
Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor Lidsky, D.; Allemang, C. R.; Hutchins-Delgado, T. Applied Physics Letters, Vol. 124, Issue 23 https://doi.org/10.1063/5.0199583	journal	June 2024
Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO_x/Al₂O₃gate dielectrics Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai Journal of Physics D: Applied Physics, Vol. 49, Issue 25 https://doi.org/10.1088/0022-3727/49/25/255104	journal	May 2016
Resistance of alloys with disordered and ordered arrangement of atoms Borelius, G. Proceedings of the Physical Society, Vol. 49, Issue 4S https://doi.org/10.1088/0959-5309/49/4S/309	journal	August 1937
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers Bao, Shuyu; Wang, Yue; Lina, Khaw Journal of Semiconductors, Vol. 42, Issue 2 https://doi.org/10.1088/1674-4926/42/2/023106	journal	February 2021
Remarkable Prospect for Quantum-Dot-Coupled Tin Qubits in Silicon Witzel, Wayne M.; Lutz, Jesse J.; Luhman, Dwight R. PRX Quantum, Vol. 3, Issue 4 https://doi.org/10.1103/PRXQuantum.3.040320	journal	November 2022
Direct Measurement of the Dielectric Constants of Silicon and Germanium Dunlap, W. C.; Watters, R. L. Physical Review, Vol. 92, Issue 6 https://doi.org/10.1103/PhysRev.92.1396	journal	December 1953
Synchronized spin-photon coupling in a microwave cavity Grigoryan, Vahram L.; Shen, Ka; Xia, Ke Physical Review B, Vol. 98, Issue 2 https://doi.org/10.1103/PhysRevB.98.024406	journal	July 2018
Silicon Photonics Jalali, Bahram; Fathpour, Sasan Journal of Lightwave Technology, Vol. 24, Issue 12 https://doi.org/10.1109/JLT.2006.885782	journal	December 2006
Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser Dutt, B.; Sukhdeo, D. S. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 5 https://doi.org/10.1109/JSTQE.2013.2241397	journal	September 2013
High-Mobility GeSn n-Channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing Liu, Tzu-Hung; Chiu, Po-Yuan; Chuang, Yen IEEE Electron Device Letters, Vol. 39, Issue 4 https://doi.org/10.1109/LED.2018.2808167	journal	April 2018
Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain Chuang, Yen; Liu, Chia-You; Luo, Guang-Li IEEE Electron Device Letters, Vol. 42, Issue 1 https://doi.org/10.1109/LED.2020.3041051	journal	January 2021
High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations Krishnamohan, T. IEEE Transactions on Electron Devices, Vol. 53, Issue 5 https://doi.org/10.1109/TED.2006.872367	journal	May 2006
High-Mobility CVD-Grown Ge/Strained Ge_0.9Sn_0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness Huang, Yu-Shiang; Tsou, Ya-Jui; Huang, Chih-Hsiung IEEE Transactions on Electron Devices, Vol. 64, Issue 6 https://doi.org/10.1109/TED.2017.2695664	journal	June 2017
Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation Liu, Mingshan; Han, Genquan; Liu, Yan 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers https://doi.org/10.1109/VLSIT.2014.6894376	conference	June 2014
Strong spin-photon coupling in silicon Samkharadze, N.; Zheng, G.; Kalhor, N. Science, Vol. 359, Issue 6380 https://doi.org/10.1126/science.aar4054	journal	January 2018
Calculation of shuffle 60° dislocation width and Peierls barrier and stress for semiconductors silicon and germanium Zhang, H. L. The European Physical Journal B, Vol. 81, Issue 2 https://doi.org/10.1140/epjb/e2011-10932-5	journal	May 2011
Investigation on the Formation and Propagation of Defects in GeSn Thin Films Mosleh, Aboozar; Benamara, Mourad; Ghetmiri, Seyed Amir ECS Transactions, Vol. 64, Issue 6 https://doi.org/10.1149/06406.0895ecst	journal	August 2014
Electrically injected GeSn lasers on Si operating up to 100 K Zhou, Yiyin; Miao, Yuanhao; Ojo, Solomon Optica, Vol. 7, Issue 8 https://doi.org/10.1364/OPTICA.395687	journal	August 2020

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