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Title: Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
2279859
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Surface Science
Additional Journal Information:
Journal Name: Applied Surface Science Journal Volume: 536 Journal Issue: C; Journal ID: ISSN 0169-4332
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Li, Wanxue, Guo, Chunsheng, Zang, Qing, Ding, Rui, and Zhao, Yong. Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer. Netherlands: N. p., 2021. Web. doi:10.1016/j.apsusc.2020.147842.
Li, Wanxue, Guo, Chunsheng, Zang, Qing, Ding, Rui, & Zhao, Yong. Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer. Netherlands. https://doi.org/10.1016/j.apsusc.2020.147842
Li, Wanxue, Guo, Chunsheng, Zang, Qing, Ding, Rui, and Zhao, Yong. Fri . "Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer". Netherlands. https://doi.org/10.1016/j.apsusc.2020.147842.
@article{osti_2279859,
title = {Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer},
author = {Li, Wanxue and Guo, Chunsheng and Zang, Qing and Ding, Rui and Zhao, Yong},
abstractNote = {},
doi = {10.1016/j.apsusc.2020.147842},
journal = {Applied Surface Science},
number = C,
volume = 536,
place = {Netherlands},
year = {Fri Jan 01 00:00:00 EST 2021},
month = {Fri Jan 01 00:00:00 EST 2021}
}

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