Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 2279859
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Surface Science
- Additional Journal Information:
- Journal Name: Applied Surface Science Journal Volume: 536 Journal Issue: C; Journal ID: ISSN 0169-4332
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Li, Wanxue, Guo, Chunsheng, Zang, Qing, Ding, Rui, and Zhao, Yong. Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer. Netherlands: N. p., 2021.
Web. doi:10.1016/j.apsusc.2020.147842.
Li, Wanxue, Guo, Chunsheng, Zang, Qing, Ding, Rui, & Zhao, Yong. Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer. Netherlands. https://doi.org/10.1016/j.apsusc.2020.147842
Li, Wanxue, Guo, Chunsheng, Zang, Qing, Ding, Rui, and Zhao, Yong. Fri .
"Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer". Netherlands. https://doi.org/10.1016/j.apsusc.2020.147842.
@article{osti_2279859,
title = {Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer},
author = {Li, Wanxue and Guo, Chunsheng and Zang, Qing and Ding, Rui and Zhao, Yong},
abstractNote = {},
doi = {10.1016/j.apsusc.2020.147842},
journal = {Applied Surface Science},
number = C,
volume = 536,
place = {Netherlands},
year = {Fri Jan 01 00:00:00 EST 2021},
month = {Fri Jan 01 00:00:00 EST 2021}
}
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