How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001)

Journal Article · Mon Jul 24 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2234845· OSTI ID:20860591

Arciprete, F; Placidi, E; Sessi, V; Fanfoni, M; Patella, F; Balzarotti, A ^[1]

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1. Dipartimento di Fisica, Universita di Roma 'Tor Vergata', Via della Ricerca Scientifica 1, I-00133 Rome (Italy)

The two- to three-dimensional growth mode transition in the InAs/GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges.

• OSTI ID: 20860591
• Journal Information: Applied Physics Letters, Vol. 89, Issue 4; Other Information: DOI: 10.1063/1.2234845; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
NUCLEATION
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
THREE-DIMENSIONAL CALCULATIONS