The stress state in bismuth to 298 GPa and its use as a pressure transmitting medium and pressure marker at multi-megabar pressures
Abstract
We have conducted diffraction studies of bismuth (Bi) to 298 GPa using both conventional and toroidal diamond anvil cells (DACs) to investigate its suitability as a pressure-transmitting medium (PTM) to such pressures. Using microfocused x-ray beams, we have determined the pressure dependence of the uniaxial stress component (t) in cubic Bi-V from 7 to 298 GPa and find that at 298 GPa, t < 0.5 GPa. Bi-V, therefore, cannot support significant shear stresses, making it an excellent PTM. We have also measured the compressibility of Bi-V against that of copper (Cu) and gold (Au), allowing it to be used as a pressure marker as well as a PTM.
- Authors:
-
[1];
[1];
[1];
[2];
[3];
[1]
- University of Edinburgh, Scotland (United Kingdom)
- AWE, Aldermaston (United Kingdom)
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC); Engineering and Physical Sciences Research Council (EPSRC)
- OSTI Identifier:
- 2274878
- Report Number(s):
- LLNL-JRNL-857141
Journal ID: ISSN 0021-8979; 1076037
- Grant/Contract Number:
- AC52-07NA27344; AC02-06CH11357; EP/R02927X/1; EP/S022155/1
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 133; Journal Issue: 24; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; diamond anvil cells; high-energy x rays; compressive stress; polycrystalline material; x-ray diffraction; bismuth; normal stress difference measurement
Citation Formats
Storm, C. V., McHardy, J. D., Duff, M. J., MacLeod, S. G., O’Bannon, E. F., and McMahon, M. I. The stress state in bismuth to 298 GPa and its use as a pressure transmitting medium and pressure marker at multi-megabar pressures. United States: N. p., 2023.
Web. doi:10.1063/5.0150419.
Storm, C. V., McHardy, J. D., Duff, M. J., MacLeod, S. G., O’Bannon, E. F., & McMahon, M. I. The stress state in bismuth to 298 GPa and its use as a pressure transmitting medium and pressure marker at multi-megabar pressures. United States. https://doi.org/10.1063/5.0150419
Storm, C. V., McHardy, J. D., Duff, M. J., MacLeod, S. G., O’Bannon, E. F., and McMahon, M. I. Wed .
"The stress state in bismuth to 298 GPa and its use as a pressure transmitting medium and pressure marker at multi-megabar pressures". United States. https://doi.org/10.1063/5.0150419. https://www.osti.gov/servlets/purl/2274878.
@article{osti_2274878,
title = {The stress state in bismuth to 298 GPa and its use as a pressure transmitting medium and pressure marker at multi-megabar pressures},
author = {Storm, C. V. and McHardy, J. D. and Duff, M. J. and MacLeod, S. G. and O’Bannon, E. F. and McMahon, M. I.},
abstractNote = {We have conducted diffraction studies of bismuth (Bi) to 298 GPa using both conventional and toroidal diamond anvil cells (DACs) to investigate its suitability as a pressure-transmitting medium (PTM) to such pressures. Using microfocused x-ray beams, we have determined the pressure dependence of the uniaxial stress component (t) in cubic Bi-V from 7 to 298 GPa and find that at 298 GPa, t < 0.5 GPa. Bi-V, therefore, cannot support significant shear stresses, making it an excellent PTM. We have also measured the compressibility of Bi-V against that of copper (Cu) and gold (Au), allowing it to be used as a pressure marker as well as a PTM.},
doi = {10.1063/5.0150419},
journal = {Journal of Applied Physics},
number = 24,
volume = 133,
place = {United States},
year = {Wed Jun 28 00:00:00 EDT 2023},
month = {Wed Jun 28 00:00:00 EDT 2023}
}
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