Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping
Abstract
Abstract In recent years, halide perovskite materials have been used to make high‐performance solar cells and light‐emitting devices. However, material defects still limit device performance and stability. Here, synchrotron‐based Bragg coherent diffraction imaging is used to visualize nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. Significant strain heterogeneity within MAPbBr 3 (MA = CH 3 NH 3 + ) crystals is found in spite of their high optoelectronic quality, and both 〈100〉 and 〈110〉 edge dislocations are identified through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, dramatic light‐induced dislocation migration across hundreds of nanometers is uncovered. Further, by selectively studying crystals that are damaged by the X‐ray beam, large dislocation densities and increased nanoscale strains are correlated with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. These results demonstrate the dynamic nature of extended defects and strain in halide perovskites, which will have important consequences for device performance and operational stability.
- Authors:
-
[1];
[1]
- Department of Chemical Engineering and Biotechnology University of Cambridge Philippa Fawcett Drive Cambridge CB3 0AS UK, Department of Physics Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE UK
- London Centre for Nanotechnology University College London London WC1E 6BT UK
- KAUST Catalysis Center (KCC) Division of Physical Sciences and Engineering (PSE) King Abdullah University of Science and Technology (KAUST) 23955‐6900 Thuwal Kingdom of Saudi Arabia
- Diamond Light Source Harwell Science and Innovation Campus Fermi Ave Didcot OX11 0DE UK
- Department of Chemical Engineering and Biotechnology University of Cambridge Philippa Fawcett Drive Cambridge CB3 0AS UK
- Department of Chemical Engineering and Biotechnology University of Cambridge Philippa Fawcett Drive Cambridge CB3 0AS UK, Department of Physics Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE UK, Department of Engineering University of Cambridge Cambridge CB2 1PZ UK
- Department of Chemical Engineering and Biotechnology University of Cambridge Philippa Fawcett Drive Cambridge CB3 0AS UK, Department of Physics Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE UK, Department of Materials Science &, Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK
- Department of Engineering University of Cambridge Cambridge CB2 1PZ UK
- London Centre for Nanotechnology University College London London WC1E 6BT UK, Condensed Matter Physics and Materials Science Department Brookhaven National Lab Upton New York 11793 USA
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 2202323
- Alternate Identifier(s):
- OSTI ID: 2004987; OSTI ID: 2202326
- Report Number(s):
- BNL-224809-2023-JAAM
Journal ID: ISSN 0935-9648; 2305549
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Published Article
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Name: Advanced Materials Journal Volume: 35 Journal Issue: 46; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Orr, Kieran W. P., Diao, Jiecheng, Lintangpradipto, Muhammad Naufal, Batey, Darren J., Iqbal, Affan N., Kahmann, Simon, Frohna, Kyle, Dubajic, Milos, Zelewski, Szymon J., Dearle, Alice E., Selby, Thomas A., Li, Peng, Doherty, Tiarnan A. S., Hofmann, Stephan, Bakr, Osman M., Robinson, Ian K., and Stranks, Samuel D. Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping. Germany: N. p., 2023.
Web. doi:10.1002/adma.202305549.
Orr, Kieran W. P., Diao, Jiecheng, Lintangpradipto, Muhammad Naufal, Batey, Darren J., Iqbal, Affan N., Kahmann, Simon, Frohna, Kyle, Dubajic, Milos, Zelewski, Szymon J., Dearle, Alice E., Selby, Thomas A., Li, Peng, Doherty, Tiarnan A. S., Hofmann, Stephan, Bakr, Osman M., Robinson, Ian K., & Stranks, Samuel D. Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping. Germany. https://doi.org/10.1002/adma.202305549
Orr, Kieran W. P., Diao, Jiecheng, Lintangpradipto, Muhammad Naufal, Batey, Darren J., Iqbal, Affan N., Kahmann, Simon, Frohna, Kyle, Dubajic, Milos, Zelewski, Szymon J., Dearle, Alice E., Selby, Thomas A., Li, Peng, Doherty, Tiarnan A. S., Hofmann, Stephan, Bakr, Osman M., Robinson, Ian K., and Stranks, Samuel D. Thu .
"Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping". Germany. https://doi.org/10.1002/adma.202305549.
@article{osti_2202323,
title = {Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping},
author = {Orr, Kieran W. P. and Diao, Jiecheng and Lintangpradipto, Muhammad Naufal and Batey, Darren J. and Iqbal, Affan N. and Kahmann, Simon and Frohna, Kyle and Dubajic, Milos and Zelewski, Szymon J. and Dearle, Alice E. and Selby, Thomas A. and Li, Peng and Doherty, Tiarnan A. S. and Hofmann, Stephan and Bakr, Osman M. and Robinson, Ian K. and Stranks, Samuel D.},
abstractNote = {Abstract In recent years, halide perovskite materials have been used to make high‐performance solar cells and light‐emitting devices. However, material defects still limit device performance and stability. Here, synchrotron‐based Bragg coherent diffraction imaging is used to visualize nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. Significant strain heterogeneity within MAPbBr 3 (MA = CH 3 NH 3 + ) crystals is found in spite of their high optoelectronic quality, and both 〈100〉 and 〈110〉 edge dislocations are identified through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, dramatic light‐induced dislocation migration across hundreds of nanometers is uncovered. Further, by selectively studying crystals that are damaged by the X‐ray beam, large dislocation densities and increased nanoscale strains are correlated with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. These results demonstrate the dynamic nature of extended defects and strain in halide perovskites, which will have important consequences for device performance and operational stability.},
doi = {10.1002/adma.202305549},
journal = {Advanced Materials},
number = 46,
volume = 35,
place = {Germany},
year = {Thu Oct 12 00:00:00 EDT 2023},
month = {Thu Oct 12 00:00:00 EDT 2023}
}
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