Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl 3 Heterostructures
Abstract
The ability to create nanometer-scale lateral p–n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/α-RuCl3, we realize nanoscale lateral p–n junctions in the vicinity of graphene nanobubbles. Our multipronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy (s-SNOM) to simultaneously probe the electronic and optical responses of nanobubble p–n junctions. Our STM/STS results reveal that p–n junctions with a band offset of ~0.6 eV can be achieved with widths of ~3 nm, giving rise to electric fields of order 108 V/m. Concurrent s-SNOM measurements validate a point-scatterer formalism for modeling the interaction of surface plasmon polaritons (SPPs) with nanobubbles. Ab initio density functional theory (DFT) calculations corroborate our experimental data and reveal the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for generating p–n nanojunctions in 2D materials.
- Authors:
-
[1];
[2];
[3];
[6];
[8];
[10];
- Department of Physics, Columbia University, New York, New York 10027, United States
- Department of Physics, Columbia University, New York, New York 10027, United States, Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
- Theory Department, Max Planck Institute for Structure and Dynamics of Matter and Center for Free-Electron Laser Science, 22761 Hamburg, Germany
- Department of Physics, Columbia University, New York, New York 10027, United States, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Theory Department, Max Planck Institute for Structure and Dynamics of Matter and Center for Free-Electron Laser Science, 22761 Hamburg, Germany, Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States, Nano-Bio Spectroscopy Group, Universidad del País Vasco UPV/EHU, San Sebastián 20018, Spain
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
- Department of Physics, Columbia University, New York, New York 10027, United States, Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
- Publication Date:
- Research Org.:
- Columbia Univ., New York, NY (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1971693
- Alternate Identifier(s):
- OSTI ID: 1854100; OSTI ID: 1855647
- Grant/Contract Number:
- SC0019443; SC0018426; AC05-00OR22725
- Resource Type:
- Published Article
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Name: Nano Letters Journal Volume: 22 Journal Issue: 5; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; scanning tunneling microscopy; scanning tunneling spectroscopy; scanning near-field optical microscopy; plasmons; two-dimensional materials; charge transfer
Citation Formats
Rizzo, Daniel J., Shabani, Sara, Jessen, Bjarke S., Zhang, Jin, McLeod, Alexander S., Rubio-Verdú, Carmen, Ruta, Francesco L., Cothrine, Matthew, Yan, Jiaqiang, Mandrus, David G., Nagler, Stephen E., Rubio, Angel, Hone, James C., Dean, Cory R., Pasupathy, Abhay N., and Basov, D. N. Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl 3 Heterostructures. United States: N. p., 2022.
Web. doi:10.1021/acs.nanolett.1c04579.
Rizzo, Daniel J., Shabani, Sara, Jessen, Bjarke S., Zhang, Jin, McLeod, Alexander S., Rubio-Verdú, Carmen, Ruta, Francesco L., Cothrine, Matthew, Yan, Jiaqiang, Mandrus, David G., Nagler, Stephen E., Rubio, Angel, Hone, James C., Dean, Cory R., Pasupathy, Abhay N., & Basov, D. N. Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl 3 Heterostructures. United States. https://doi.org/10.1021/acs.nanolett.1c04579
Rizzo, Daniel J., Shabani, Sara, Jessen, Bjarke S., Zhang, Jin, McLeod, Alexander S., Rubio-Verdú, Carmen, Ruta, Francesco L., Cothrine, Matthew, Yan, Jiaqiang, Mandrus, David G., Nagler, Stephen E., Rubio, Angel, Hone, James C., Dean, Cory R., Pasupathy, Abhay N., and Basov, D. N. Mon .
"Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl 3 Heterostructures". United States. https://doi.org/10.1021/acs.nanolett.1c04579.
@article{osti_1971693,
title = {Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl 3 Heterostructures},
author = {Rizzo, Daniel J. and Shabani, Sara and Jessen, Bjarke S. and Zhang, Jin and McLeod, Alexander S. and Rubio-Verdú, Carmen and Ruta, Francesco L. and Cothrine, Matthew and Yan, Jiaqiang and Mandrus, David G. and Nagler, Stephen E. and Rubio, Angel and Hone, James C. and Dean, Cory R. and Pasupathy, Abhay N. and Basov, D. N.},
abstractNote = {The ability to create nanometer-scale lateral p–n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/α-RuCl3, we realize nanoscale lateral p–n junctions in the vicinity of graphene nanobubbles. Our multipronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy (s-SNOM) to simultaneously probe the electronic and optical responses of nanobubble p–n junctions. Our STM/STS results reveal that p–n junctions with a band offset of ~0.6 eV can be achieved with widths of ~3 nm, giving rise to electric fields of order 108 V/m. Concurrent s-SNOM measurements validate a point-scatterer formalism for modeling the interaction of surface plasmon polaritons (SPPs) with nanobubbles. Ab initio density functional theory (DFT) calculations corroborate our experimental data and reveal the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for generating p–n nanojunctions in 2D materials.},
doi = {10.1021/acs.nanolett.1c04579},
journal = {Nano Letters},
number = 5,
volume = 22,
place = {United States},
year = {Mon Feb 28 00:00:00 EST 2022},
month = {Mon Feb 28 00:00:00 EST 2022}
}
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