Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators
Abstract
The extreme versatility of van der Waals materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. 1 For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI3, CrBr3, and CrCl3). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical gate-dependent transport features. The charge transfer can additionally be altered upon switching the magnetic states of the nearest CrI3 layers. In conclusion, our results provide a roadmap for exploiting proximity effects arising in graphene coupled to magnetic insulators.
- Authors:
-
[1];
[1];
[2];
[2];
[3];
[1];
[1]
- University of Washington, Seattle, WA (United States)
- National Institute for Materials Science (NIMS), Tsukuba (Japan)
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- University of Washington, Seattle, WA (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States); Energy Frontier Research Center (United States). Programmable Quantum Materials
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); Gordon and Betty Moore Foundation; Japan Society for the Promotion of Science (JSPS)
- OSTI Identifier:
- 1963135
- Alternate Identifier(s):
- OSTI ID: 1901743
- Report Number(s):
- PNNL-SA-178999
Journal ID: ISSN 1530-6984
- Grant/Contract Number:
- AC05-76RL01830; SC0019443; NSF MRSEC 1719797; GBMF6759; JPMXP0112101001; 19H05790; 20H00354; 21H05233
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 22; Journal Issue: 21; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; graphene; 2D magnet; proximity effect; modulation doping; van der Waals heterostructure
Citation Formats
Tseng, Chun-Chih, Song, Tiancheng, Jiang, Qianni, Lin, Zhong, Wang, Chong, Suh, Jaehyun, Watanabe, Kenji, Taniguchi, Takashi, McGuire, Michael A., Xiao, Di, Chu, Jiun-Haw, Cobden, David H., Xu, Xiaodong, and Yankowitz, Matthew. Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators. United States: N. p., 2022.
Web. doi:10.1021/acs.nanolett.2c02931.
Tseng, Chun-Chih, Song, Tiancheng, Jiang, Qianni, Lin, Zhong, Wang, Chong, Suh, Jaehyun, Watanabe, Kenji, Taniguchi, Takashi, McGuire, Michael A., Xiao, Di, Chu, Jiun-Haw, Cobden, David H., Xu, Xiaodong, & Yankowitz, Matthew. Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators. United States. https://doi.org/10.1021/acs.nanolett.2c02931
Tseng, Chun-Chih, Song, Tiancheng, Jiang, Qianni, Lin, Zhong, Wang, Chong, Suh, Jaehyun, Watanabe, Kenji, Taniguchi, Takashi, McGuire, Michael A., Xiao, Di, Chu, Jiun-Haw, Cobden, David H., Xu, Xiaodong, and Yankowitz, Matthew. Mon .
"Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators". United States. https://doi.org/10.1021/acs.nanolett.2c02931. https://www.osti.gov/servlets/purl/1963135.
@article{osti_1963135,
title = {Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators},
author = {Tseng, Chun-Chih and Song, Tiancheng and Jiang, Qianni and Lin, Zhong and Wang, Chong and Suh, Jaehyun and Watanabe, Kenji and Taniguchi, Takashi and McGuire, Michael A. and Xiao, Di and Chu, Jiun-Haw and Cobden, David H. and Xu, Xiaodong and Yankowitz, Matthew},
abstractNote = {The extreme versatility of van der Waals materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. 1 For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI3, CrBr3, and CrCl3). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical gate-dependent transport features. The charge transfer can additionally be altered upon switching the magnetic states of the nearest CrI3 layers. In conclusion, our results provide a roadmap for exploiting proximity effects arising in graphene coupled to magnetic insulators.},
doi = {10.1021/acs.nanolett.2c02931},
journal = {Nano Letters},
number = 21,
volume = 22,
place = {United States},
year = {Mon Oct 24 00:00:00 EDT 2022},
month = {Mon Oct 24 00:00:00 EDT 2022}
}
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