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Title: Evaluation of Neutron-Radiation Tolerance of Lithium Indium Diselenide Semiconductors

Abstract

Lithium indium diselenide (LISe) is a semiconductor that holds promise for neutron imaging sensor technologies because of its high neutron absorption efficiency and its corresponding ability to discriminate between gamma rays and neutrons. However, being a semiconductor, LISe may not be sufficiently radiation hard for practical application in radiation hard environments. Therefore, a systematic evaluation of the changes in material and electronic properties of LISe after high neutron fluence exposures is investigated. Herein, the characterization methods are utilized which included UV–vis, X‐ray diffraction, radioluminescence, Raman, fourier transform infrared spectroscopy (FTIR), current–voltage, and neutron sensing. Characteristics of LISe material that appeared in the literature are identified herein along with several that are expected to appear based on theoretical analyses. The results obtained show clear changes in the material properties of LISe after neutron exposure up to a fluence of 10 16  n cm −2 . However, LISe is still able to sense neutrons above the background at 10 16  n cm −2 , suggesting that LISe may be suitable for use in neutron imaging sensors at neutron imaging facilities.

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [2];  [2];  [3]; ORCiD logo [1]
+ Show Author Affiliations
  1. Univ. of Tennessee, Knoxville, TN (United States). Institute for Advanced Materials and Manufacturing
  2. Radiation Monitoring Devices, Watertown, MA (United States)
  3. Univ. of Tennessee, Knoxville, TN (United States). Scintillation Materials Research Center
Publication Date:
Research Org.:
Univ. of Tennessee, Knoxville, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1922911
Alternate Identifier(s):
OSTI ID: 1963324
Grant/Contract Number:  
SC0019446
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 220; Journal Issue: 9; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Golduber, Robert, Gallagher, Jake, Benkechkache, Amine, Hoegberg, Erick, Hong, Huicong, Kargar, Alireza, Stracuzzi, Luis Stand, and Lukosi, Eric. Evaluation of Neutron-Radiation Tolerance of Lithium Indium Diselenide Semiconductors. United States: N. p., 2023. Web. doi:10.1002/pssa.202300012.
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Golduber, Robert, Gallagher, Jake, Benkechkache, Amine, Hoegberg, Erick, Hong, Huicong, Kargar, Alireza, Stracuzzi, Luis Stand, & Lukosi, Eric. Evaluation of Neutron-Radiation Tolerance of Lithium Indium Diselenide Semiconductors. United States. https://doi.org/10.1002/pssa.202300012
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Golduber, Robert, Gallagher, Jake, Benkechkache, Amine, Hoegberg, Erick, Hong, Huicong, Kargar, Alireza, Stracuzzi, Luis Stand, and Lukosi, Eric. Thu . "Evaluation of Neutron-Radiation Tolerance of Lithium Indium Diselenide Semiconductors". United States. https://doi.org/10.1002/pssa.202300012. https://www.osti.gov/servlets/purl/1922911.
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@article{osti_1922911,
title = {Evaluation of Neutron-Radiation Tolerance of Lithium Indium Diselenide Semiconductors},
author = {Golduber, Robert and Gallagher, Jake and Benkechkache, Amine and Hoegberg, Erick and Hong, Huicong and Kargar, Alireza and Stracuzzi, Luis Stand and Lukosi, Eric},
abstractNote = {Lithium indium diselenide (LISe) is a semiconductor that holds promise for neutron imaging sensor technologies because of its high neutron absorption efficiency and its corresponding ability to discriminate between gamma rays and neutrons. However, being a semiconductor, LISe may not be sufficiently radiation hard for practical application in radiation hard environments. Therefore, a systematic evaluation of the changes in material and electronic properties of LISe after high neutron fluence exposures is investigated. Herein, the characterization methods are utilized which included UV–vis, X‐ray diffraction, radioluminescence, Raman, fourier transform infrared spectroscopy (FTIR), current–voltage, and neutron sensing. Characteristics of LISe material that appeared in the literature are identified herein along with several that are expected to appear based on theoretical analyses. The results obtained show clear changes in the material properties of LISe after neutron exposure up to a fluence of 10 16  n cm −2 . However, LISe is still able to sense neutrons above the background at 10 16  n cm −2 , suggesting that LISe may be suitable for use in neutron imaging sensors at neutron imaging facilities.},
doi = {10.1002/pssa.202300012},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 9,
volume = 220,
place = {United States},
year = {Thu Feb 09 00:00:00 EST 2023},
month = {Thu Feb 09 00:00:00 EST 2023}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1002/pssa.202300012
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Figures / Tables:

Table 1 Table 1: The thickness of LISe quarter-wafers after polishing and etching.
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    Figures / Tables found in this record:

    Table 1 (p. 3)table
    Figure 1 (p. 4)figure
    Figure 2 (p. 5)figure
    Figure 3 (p. 8)figure
    Figure 4 (p. 8)figure
    Table 2 (p. 8)table
    Figure 5 (p. 9)figure
    Table 3 (p. 9)table
    Figure 6 (p. 10)figure
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    Table 4 (p. 14)table
    Figure 9 (p. 15)figure
    Table 5 (p. 15)table
    Figure 10 (p. 16)figure
    Figure S1 (p. 21)figure
    Figure S2 (p. 22)figure
    Figure S3: Part 1 (p. 22)figure
    Figure S3: Part 2 (p. 23)figure
    Figure S3: Part 3 (p. 24)figure
    Figure S4 (p. 25)figure
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