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Title: Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation

Abstract

Here, we report on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14–15 fC) than that of alpha particles (3–5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [2];  [2];  [2]; ORCiD logo [3];  [4];  [5]; ORCiD logo [1]
  1. Univ. of Tennessee, Knoxville, TN (United States). Department of Nuclear Engineering
  2. Fisk Univ., Nashville, TN (United States). Department of Life and Physical Sciences
  3. Fisk Univ., Nashville, TN (United States). Department of Life and Physical Sciences; Vanderbilt Univ., Nashville, TN (United States). Department of Physics and Astronomy
  4. Univ. of Tennessee, Knoxville, TN (United States). Department of Nuclear Engineering; Vanderbilt Univ., Nashville, TN (United States). Department of Physics and Astronomy; Y-12 National Security Complex, Oak Ridge, TN (United States). Technology Development
  5. Y-12 National Security Complex, Oak Ridge, TN (United States). Technology Development
Publication Date:
Research Org.:
Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1479918
Alternate Identifier(s):
OSTI ID: 1441248
Report Number(s):
IROS6851_3
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
NE0000094
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 24; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 6LiInSe2; LISe; neutron detector; charge carrier transport

Citation Formats

Hamm, Daniel S., Rust, Mikah, Herrera, Elan H., Matei, Liviu, Buliga, Vladimir, Groza, Michael, Burger, Arnold, Stowe, Ashley, Preston, Jeff, and Lukosi, Eric D. Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation. United States: N. p., 2018. Web. doi:10.1063/1.5028269.
Hamm, Daniel S., Rust, Mikah, Herrera, Elan H., Matei, Liviu, Buliga, Vladimir, Groza, Michael, Burger, Arnold, Stowe, Ashley, Preston, Jeff, & Lukosi, Eric D. Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation. United States. doi:10.1063/1.5028269.
Hamm, Daniel S., Rust, Mikah, Herrera, Elan H., Matei, Liviu, Buliga, Vladimir, Groza, Michael, Burger, Arnold, Stowe, Ashley, Preston, Jeff, and Lukosi, Eric D. Tue . "Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation". United States. doi:10.1063/1.5028269. https://www.osti.gov/servlets/purl/1479918.
@article{osti_1479918,
title = {Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation},
author = {Hamm, Daniel S. and Rust, Mikah and Herrera, Elan H. and Matei, Liviu and Buliga, Vladimir and Groza, Michael and Burger, Arnold and Stowe, Ashley and Preston, Jeff and Lukosi, Eric D.},
abstractNote = {Here, we report on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14–15 fC) than that of alpha particles (3–5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.},
doi = {10.1063/1.5028269},
journal = {Applied Physics Letters},
number = 24,
volume = 112,
place = {United States},
year = {2018},
month = {6}
}

Journal Article:
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Cited by: 3 works
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Figures / Tables:

Fig. 1 Fig. 1: (a) Electron mobility-lifetime product and W-value for L1 as a function of sample thickness for sample L1. (b) Response of L3 to alpha particles using dual scintillation and semiconducting modes of operation. (c) Histogram of signal arrival time difference between the semiconducting and scintillating signals of L3, indicatingmore » that the first signal is scintillation, generated an average of 78.5 ns before the semiconducting signal is observed. (d) Charge collected in sample L2 as a function of applied bias for holes and electrons.« less

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