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Title: Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation

Here, we report on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14–15 fC) than that of alpha particles (3–5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.
Authors:
ORCiD logo [1] ;  [1] ;  [1] ; ORCiD logo [2] ;  [2] ;  [2] ; ORCiD logo [3] ;  [4] ;  [5] ; ORCiD logo [1]
  1. Univ. of Tennessee, Knoxville, TN (United States). Department of Nuclear Engineering
  2. Fisk Univ., Nashville, TN (United States). Department of Life and Physical Sciences
  3. Fisk Univ., Nashville, TN (United States). Department of Life and Physical Sciences; Vanderbilt Univ., Nashville, TN (United States). Department of Physics and Astronomy
  4. Univ. of Tennessee, Knoxville, TN (United States). Department of Nuclear Engineering; Vanderbilt Univ., Nashville, TN (United States). Department of Physics and Astronomy; Y-12 National Security Complex, Oak Ridge, TN (United States). Technology Development
  5. Y-12 National Security Complex, Oak Ridge, TN (United States). Technology Development
Publication Date:
Report Number(s):
IROS6851_3
Journal ID: ISSN 0003-6951
Grant/Contract Number:
NE0000094
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 24; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 6LiInSe2; LISe; neutron detector; charge carrier transport
OSTI Identifier:
1479918
Alternate Identifier(s):
OSTI ID: 1441248

Hamm, Daniel S., Rust, Mikah, Herrera, Elan H., Matei, Liviu, Buliga, Vladimir, Groza, Michael, Burger, Arnold, Stowe, Ashley, Preston, Jeff, and Lukosi, Eric D.. Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation. United States: N. p., Web. doi:10.1063/1.5028269.
Hamm, Daniel S., Rust, Mikah, Herrera, Elan H., Matei, Liviu, Buliga, Vladimir, Groza, Michael, Burger, Arnold, Stowe, Ashley, Preston, Jeff, & Lukosi, Eric D.. Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation. United States. doi:10.1063/1.5028269.
Hamm, Daniel S., Rust, Mikah, Herrera, Elan H., Matei, Liviu, Buliga, Vladimir, Groza, Michael, Burger, Arnold, Stowe, Ashley, Preston, Jeff, and Lukosi, Eric D.. 2018. "Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation". United States. doi:10.1063/1.5028269.
@article{osti_1479918,
title = {Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation},
author = {Hamm, Daniel S. and Rust, Mikah and Herrera, Elan H. and Matei, Liviu and Buliga, Vladimir and Groza, Michael and Burger, Arnold and Stowe, Ashley and Preston, Jeff and Lukosi, Eric D.},
abstractNote = {Here, we report on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14–15 fC) than that of alpha particles (3–5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.},
doi = {10.1063/1.5028269},
journal = {Applied Physics Letters},
number = 24,
volume = 112,
place = {United States},
year = {2018},
month = {6}
}

Works referenced in this record:

Design considerations for thin film coated semiconductor thermal neutron detectors�I: basics regarding alpha particle emitting neutron reactive films
journal, March 2003
  • McGregor, D. S.; Hammig, M. D.; Yang, Y.-H.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 500, Issue 1-3, p. 272-308
  • DOI: 10.1016/S0168-9002(02)02078-8