Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Abstract
Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d – V g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.
- Authors:
-
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- National Taiwan Univ., Taipei (Taiwan)
- Nanyang Technological Univ. (Singapore)
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- National Taiwan Univ., Taipei (Taiwan); Taiwan Semiconductor Research Institute (Taiwan)
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); Ministry of Science and Technology; National Taiwan University
- OSTI Identifier:
- 1898359
- Alternate Identifier(s):
- OSTI ID: 1897335
- Report Number(s):
- LA-UR-22-21355
Journal ID: ISSN 2166-532X; TRN: US2311066
- Grant/Contract Number:
- 89233218CNA000001; 20200672DI; NA0003525; 110-2622-8-002-014
- Resource Type:
- Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 11; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Materials science
Citation Formats
Wang, Xuejing, Lin, Yung-Chen, Tai, Chia-Tse, Lee, Seok Woo, Lu, Tzu-Ming, Shin, Sun Ra, Addamane, Sadhvikas J., Sheehan, Chris, Li, Jiun-Yun, Kim, Yerim, and Yoo, Jinkyoung. Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure. United States: N. p., 2022.
Web. doi:10.1063/5.0119654.
Wang, Xuejing, Lin, Yung-Chen, Tai, Chia-Tse, Lee, Seok Woo, Lu, Tzu-Ming, Shin, Sun Ra, Addamane, Sadhvikas J., Sheehan, Chris, Li, Jiun-Yun, Kim, Yerim, & Yoo, Jinkyoung. Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure. United States. https://doi.org/10.1063/5.0119654
Wang, Xuejing, Lin, Yung-Chen, Tai, Chia-Tse, Lee, Seok Woo, Lu, Tzu-Ming, Shin, Sun Ra, Addamane, Sadhvikas J., Sheehan, Chris, Li, Jiun-Yun, Kim, Yerim, and Yoo, Jinkyoung. Tue .
"Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure". United States. https://doi.org/10.1063/5.0119654. https://www.osti.gov/servlets/purl/1898359.
@article{osti_1898359,
title = {Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure},
author = {Wang, Xuejing and Lin, Yung-Chen and Tai, Chia-Tse and Lee, Seok Woo and Lu, Tzu-Ming and Shin, Sun Ra and Addamane, Sadhvikas J. and Sheehan, Chris and Li, Jiun-Yun and Kim, Yerim and Yoo, Jinkyoung},
abstractNote = {Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d – V g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.},
doi = {10.1063/5.0119654},
journal = {APL Materials},
number = 11,
volume = 10,
place = {United States},
year = {Tue Nov 08 00:00:00 EST 2022},
month = {Tue Nov 08 00:00:00 EST 2022}
}
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