Hybrid molecular beam epitaxy of germanium-based oxides
Abstract
Abstract Germanium-based oxides such as rutile GeO 2 are garnering attention owing to their wide band gaps and the prospects of ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, as a source of germanium for the demonstration of hybrid molecular beam epitaxy for germanium-containing compounds. We use Sn 1- x Ge x O 2 and SrSn 1- x Ge x O 3 as model systems to demonstrate our synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn 1- x Ge x O 2 on TiO 2 (001) substrates up to x = 0.54 and coherent perovskite SrSn 1- x Ge x O 3 on GdScO 3 (110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that germanium occupies the tin site, as opposed to the strontium site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid molecular beam epitaxy, thus providing a promising route to high-quality perovskite germanatemore »
- Publication Date:
- Research Org.:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)
- OSTI Identifier:
- 1890766
- Alternate Identifier(s):
- OSTI ID: 1895120
- Report Number(s):
- PNNL-SA-171432
Journal ID: ISSN 2662-4443; 69; PII: 290
- Grant/Contract Number:
- SC0020211; AC05-76RL01830; SC002021; FA9550-21-1-0025; FA9550-21-0460; DMR-1741801; DMR-2011401; ECCS-2025124
- Resource Type:
- Published Article
- Journal Name:
- Communications Materials
- Additional Journal Information:
- Journal Name: Communications Materials Journal Volume: 3 Journal Issue: 1; Journal ID: ISSN 2662-4443
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; design, synthesis and processing; electronic devices
Citation Formats
Liu, Fengdeng, Truttmann, Tristan K., Lee, Dooyong, Matthews, Bethany E., Laraib, Iflah, Janotti, Anderson, Spurgeon, Steven R., Chambers, Scott A., and Jalan, Bharat. Hybrid molecular beam epitaxy of germanium-based oxides. United Kingdom: N. p., 2022.
Web. doi:10.1038/s43246-022-00290-y.
Liu, Fengdeng, Truttmann, Tristan K., Lee, Dooyong, Matthews, Bethany E., Laraib, Iflah, Janotti, Anderson, Spurgeon, Steven R., Chambers, Scott A., & Jalan, Bharat. Hybrid molecular beam epitaxy of germanium-based oxides. United Kingdom. https://doi.org/10.1038/s43246-022-00290-y
Liu, Fengdeng, Truttmann, Tristan K., Lee, Dooyong, Matthews, Bethany E., Laraib, Iflah, Janotti, Anderson, Spurgeon, Steven R., Chambers, Scott A., and Jalan, Bharat. Tue .
"Hybrid molecular beam epitaxy of germanium-based oxides". United Kingdom. https://doi.org/10.1038/s43246-022-00290-y.
@article{osti_1890766,
title = {Hybrid molecular beam epitaxy of germanium-based oxides},
author = {Liu, Fengdeng and Truttmann, Tristan K. and Lee, Dooyong and Matthews, Bethany E. and Laraib, Iflah and Janotti, Anderson and Spurgeon, Steven R. and Chambers, Scott A. and Jalan, Bharat},
abstractNote = {Abstract Germanium-based oxides such as rutile GeO 2 are garnering attention owing to their wide band gaps and the prospects of ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, as a source of germanium for the demonstration of hybrid molecular beam epitaxy for germanium-containing compounds. We use Sn 1- x Ge x O 2 and SrSn 1- x Ge x O 3 as model systems to demonstrate our synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn 1- x Ge x O 2 on TiO 2 (001) substrates up to x = 0.54 and coherent perovskite SrSn 1- x Ge x O 3 on GdScO 3 (110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that germanium occupies the tin site, as opposed to the strontium site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid molecular beam epitaxy, thus providing a promising route to high-quality perovskite germanate films.},
doi = {10.1038/s43246-022-00290-y},
journal = {Communications Materials},
number = 1,
volume = 3,
place = {United Kingdom},
year = {Tue Oct 04 00:00:00 EDT 2022},
month = {Tue Oct 04 00:00:00 EDT 2022}
}
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