Engineering metal oxidation using epitaxial strain

Nair, Sreejith; Yang, Zhifei; Lee, Dooyong; Guo, Silu; Sadowski, Jerzy T.; Johnson, Spencer; Saboor, Abdul; Li, Yan; Zhou, Hua; Comes, Ryan B.; Jin, Wencan; Mkhoyan, K. Andre; Janotti, Anderson; Jalan, Bharat

doi:10.1038/s41565-023-01397-0

Title: Engineering metal oxidation using epitaxial strain

Journal Article · 22 May 2023 · Nature Nanotechnology

DOI: https://doi.org/10.1038/s41565-023-01397-0 · OSTI ID:1984413

^[1]; Yang, Zhifei ^[1]; Lee, Dooyong ^[1]; Guo, Silu ^[1];

^[2]; Johnson, Spencer ^[3];

^[4];

^[5];

^[6]; Comes, Ryan B. ^[3]; Jin, Wencan ^[3];

^[1]; Janotti, Anderson ^[4];

^[1]

Univ. of Minnesota, Minneapolis, MN (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Auburn Univ., AL (United States)
Univ. of Delaware, Newark, DE (United States)
Argonne National Laboratory (ANL), Argonne, IL (United States). Materials Science Division
Argonne National Laboratory (ANL), Argonne, IL (United States). X-ray Science Division

The oxides of platinum group metals are promising for future electronics and spintronics due to the delicate interplay of spin-orbit coupling and electron correlation energies. However, their synthesis as thin films remains challenging due to their low vapour pressures and low oxidation potentials. Here we show how epitaxial strain can be used as a control knob to enhance metal oxidation. Using Ir as an example, we demonstrate the use of epitaxial strain in engineering its oxidation chemistry, enabling phase-pure Ir or IrO₂ films despite using identical growth conditions. The observations are explained using a density-functional-theory-based modified formation enthalpy framework, which highlights the important role of metal-substrate epitaxial strain in governing the oxide formation enthalpy. We also validate the generality of this principle by demonstrating epitaxial strain effect on Ru oxidation. The IrO₂ films studied in our work further revealed quantum oscillations, attesting to the excellent film quality. The epitaxial strain approach we present could enable growth of oxide films of hard-to-oxidize elements using strain engineering.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

Grant/Contract Number:: SC0012704; SC0020211; SC0023478; AC02-06CH11357

OSTI ID:: 1984413

Report Number(s):: BNL--224486-2023-JAAM

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Vol. 18; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Engineering metal oxidation using epitaxial strain

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