Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device
Abstract
Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we observe differences in the extracted values of the single-hole effective g factors of the constituent quantum dots of a GaAs/AlGaAs double quantum dot device at the level of ~ 5 %–10%. We examine the continuous change in the hole g factor with electrical detuning over a wide range of interdot tunnel couplings and for different out-of-plane magnetic fields. The observed tendency of the quantum dot effective g factors to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.
- Authors:
-
[1];
[1];
[2];
- National Research Council of Canada, Ottawa, ON (Canada); Univ. of Waterloo, ON (Canada)
- National Research Council of Canada, Ottawa, ON (Canada)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1871996
- Report Number(s):
- SAND2022-6543J
Journal ID: ISSN 2469-9950; 705962; TRN: US2306832
- Grant/Contract Number:
- NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 19; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; quantum information architectures and platforms; spin blockade; spin-orbit coupling; III-V semiconductors; quantum dots; electron spin resonance
Citation Formats
Padawer-Blatt, Aviv, Ducatel, Jordan, Korkusinski, M., Bogan, Alex, Gaudreau, Louis, Zawadzki, Piotr, Austing, D. Guy, Sachrajda, Andrew S., Studenikin, Sergei, Tracy, Lisa, Reno, John, and Hargett, Terry. Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device. United States: N. p., 2022.
Web. doi:10.1103/physrevb.105.195305.
Padawer-Blatt, Aviv, Ducatel, Jordan, Korkusinski, M., Bogan, Alex, Gaudreau, Louis, Zawadzki, Piotr, Austing, D. Guy, Sachrajda, Andrew S., Studenikin, Sergei, Tracy, Lisa, Reno, John, & Hargett, Terry. Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device. United States. https://doi.org/10.1103/physrevb.105.195305
Padawer-Blatt, Aviv, Ducatel, Jordan, Korkusinski, M., Bogan, Alex, Gaudreau, Louis, Zawadzki, Piotr, Austing, D. Guy, Sachrajda, Andrew S., Studenikin, Sergei, Tracy, Lisa, Reno, John, and Hargett, Terry. Wed .
"Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device". United States. https://doi.org/10.1103/physrevb.105.195305. https://www.osti.gov/servlets/purl/1871996.
@article{osti_1871996,
title = {Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device},
author = {Padawer-Blatt, Aviv and Ducatel, Jordan and Korkusinski, M. and Bogan, Alex and Gaudreau, Louis and Zawadzki, Piotr and Austing, D. Guy and Sachrajda, Andrew S. and Studenikin, Sergei and Tracy, Lisa and Reno, John and Hargett, Terry},
abstractNote = {Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we observe differences in the extracted values of the single-hole effective g factors of the constituent quantum dots of a GaAs/AlGaAs double quantum dot device at the level of ~ 5 %–10%. We examine the continuous change in the hole g factor with electrical detuning over a wide range of interdot tunnel couplings and for different out-of-plane magnetic fields. The observed tendency of the quantum dot effective g factors to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.},
doi = {10.1103/physrevb.105.195305},
journal = {Physical Review. B},
number = 19,
volume = 105,
place = {United States},
year = {Wed May 11 00:00:00 EDT 2022},
month = {Wed May 11 00:00:00 EDT 2022}
}
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