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Title: Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot

Abstract

Electrical tunability of the $$g$$-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective $$g$$-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.

Authors:
 [1];  [1];  [2];  [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [3];  [4];  [4];  [4]
+ Show Author Affiliations
  1. National Research Council of Canada, Ottawa, ON (Canada)
  2. National Research Council of Canada, Ottawa, ON (Canada); Tohoku Univ., Sendai (Japan)
  3. Tohoku Univ., Sendai (Japan)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1595023
Report Number(s):
SAND-2019-14630J
Journal ID: ISSN 2399-3650; 682478; TRN: US2102090
Grant/Contract Number:  
AC04-94AL85000; NA-0003525
Resource Type:
Accepted Manuscript
Journal Name:
Communications Physics
Additional Journal Information:
Journal Volume: 2; Journal Issue: 1; Journal ID: ISSN 2399-3650
Publisher:
Springer Nature
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Studenikin, Sergei, Korkusinski, Marek, Takahashi, Motoi, Ducatel, Jordan, Padawer-Blatt, Aviv, Bogan, Alex, Austing, D. Guy, Gaudreau, Louis, Zawadzki, Piotr, Sachrajda, Andrew, Hirayama, Yoshiro, Tracy, Lisa, Reno, John, and Hargett, Terry. Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot. United States: N. p., 2019. Web. doi:10.1038/s42005-019-0262-1.
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Studenikin, Sergei, Korkusinski, Marek, Takahashi, Motoi, Ducatel, Jordan, Padawer-Blatt, Aviv, Bogan, Alex, Austing, D. Guy, Gaudreau, Louis, Zawadzki, Piotr, Sachrajda, Andrew, Hirayama, Yoshiro, Tracy, Lisa, Reno, John, & Hargett, Terry. Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot. United States. https://doi.org/10.1038/s42005-019-0262-1
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Studenikin, Sergei, Korkusinski, Marek, Takahashi, Motoi, Ducatel, Jordan, Padawer-Blatt, Aviv, Bogan, Alex, Austing, D. Guy, Gaudreau, Louis, Zawadzki, Piotr, Sachrajda, Andrew, Hirayama, Yoshiro, Tracy, Lisa, Reno, John, and Hargett, Terry. Fri . "Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot". United States. https://doi.org/10.1038/s42005-019-0262-1. https://www.osti.gov/servlets/purl/1595023.
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@article{osti_1595023,
title = {Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot},
author = {Studenikin, Sergei and Korkusinski, Marek and Takahashi, Motoi and Ducatel, Jordan and Padawer-Blatt, Aviv and Bogan, Alex and Austing, D. Guy and Gaudreau, Louis and Zawadzki, Piotr and Sachrajda, Andrew and Hirayama, Yoshiro and Tracy, Lisa and Reno, John and Hargett, Terry},
abstractNote = {Electrical tunability of the $g$-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective $g$-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.},
doi = {10.1038/s42005-019-0262-1},
journal = {Communications Physics},
number = 1,
volume = 2,
place = {United States},
year = {Fri Dec 13 00:00:00 EST 2019},
month = {Fri Dec 13 00:00:00 EST 2019}
}
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https://doi.org/10.1038/s42005-019-0262-1
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