Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films
Abstract
Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. Here, a mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO3. Modification of the NdNiO3 template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO6 octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.
- Authors:
-
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- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
- Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea
- Department of Physics, University of Ulsan and Energy Harvest-Storage Research Center (EHSRC), Ulsan 44610, Republic of Korea
- Department of Physics, Inha University, Incheon 22212, Republic of Korea
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
- Department of Physics, Soongsil University, Seoul 06978, Republic of Korea
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation of Korea (NRF)
- OSTI Identifier:
- 1858783
- Alternate Identifier(s):
- OSTI ID: 1840962
- Grant/Contract Number:
- DEAC02-06CH11357; AC02-06CH11357; NRF-2018R1D1A1B07043155; NRF-2020R1F1A1057220; NRF-2019R1C1C1010345; NRF-2019R1A6A1A11053838; NRF-2020R1A4A1017915; 2017M3D1A1040834; NRF-2019K1A3A7A09033393; 2013M3A6B1078872; 2020R1A6C101A202
- Resource Type:
- Published Article
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Name: ACS Applied Materials and Interfaces Journal Volume: 13 Journal Issue: 45; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; heteroepitaxy; metal-to-insulator phase transition; oxide; template engineering; thin film
Citation Formats
Lee, Jongmin, Kim, Gi-Yeop, Jeong, Seyeop, Yang, Mihyun, Kim, Jong-Woo, Cho, Byeong-Gwan, Choi, Yongseong, Kim, Sangmo, Choi, Jin San, Lee, Tae Kwon, Kim, Jiwoong, Lee, Dong Ryeol, Chang, Seo Hyoung, Park, Sungkyun, Jung, Jong Hoon, Bark, Chung Wung, Koo, Tae-Young, Ryan, Philip J., Ihm, Kyuwook, Kim, Sanghoon, Choi, Si-Young, Kim, Tae Heon, and Lee, Sanghan. Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films. United States: N. p., 2021.
Web. doi:10.1021/acsami.1c13675.
Lee, Jongmin, Kim, Gi-Yeop, Jeong, Seyeop, Yang, Mihyun, Kim, Jong-Woo, Cho, Byeong-Gwan, Choi, Yongseong, Kim, Sangmo, Choi, Jin San, Lee, Tae Kwon, Kim, Jiwoong, Lee, Dong Ryeol, Chang, Seo Hyoung, Park, Sungkyun, Jung, Jong Hoon, Bark, Chung Wung, Koo, Tae-Young, Ryan, Philip J., Ihm, Kyuwook, Kim, Sanghoon, Choi, Si-Young, Kim, Tae Heon, & Lee, Sanghan. Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films. United States. https://doi.org/10.1021/acsami.1c13675
Lee, Jongmin, Kim, Gi-Yeop, Jeong, Seyeop, Yang, Mihyun, Kim, Jong-Woo, Cho, Byeong-Gwan, Choi, Yongseong, Kim, Sangmo, Choi, Jin San, Lee, Tae Kwon, Kim, Jiwoong, Lee, Dong Ryeol, Chang, Seo Hyoung, Park, Sungkyun, Jung, Jong Hoon, Bark, Chung Wung, Koo, Tae-Young, Ryan, Philip J., Ihm, Kyuwook, Kim, Sanghoon, Choi, Si-Young, Kim, Tae Heon, and Lee, Sanghan. Fri .
"Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films". United States. https://doi.org/10.1021/acsami.1c13675.
@article{osti_1858783,
title = {Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films},
author = {Lee, Jongmin and Kim, Gi-Yeop and Jeong, Seyeop and Yang, Mihyun and Kim, Jong-Woo and Cho, Byeong-Gwan and Choi, Yongseong and Kim, Sangmo and Choi, Jin San and Lee, Tae Kwon and Kim, Jiwoong and Lee, Dong Ryeol and Chang, Seo Hyoung and Park, Sungkyun and Jung, Jong Hoon and Bark, Chung Wung and Koo, Tae-Young and Ryan, Philip J. and Ihm, Kyuwook and Kim, Sanghoon and Choi, Si-Young and Kim, Tae Heon and Lee, Sanghan},
abstractNote = {Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. Here, a mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO3. Modification of the NdNiO3 template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO6 octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.},
doi = {10.1021/acsami.1c13675},
journal = {ACS Applied Materials and Interfaces},
number = 45,
volume = 13,
place = {United States},
year = {Fri Nov 05 00:00:00 EDT 2021},
month = {Fri Nov 05 00:00:00 EDT 2021}
}
https://doi.org/10.1021/acsami.1c13675
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