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Title: Interfacial Octahedral Manipulation Imparts Hysteresis-Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure

Journal Article · · Advanced Materials Interfaces
 [1];  [2]; ORCiD logo [3];  [2];  [4];  [5];  [6]
  1. Univ. of Science and Technology of China, Hefei (China). National Synchrotron Radiation Lab.; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  3. Univ. of Science and Technology of China, Hefei (China). National Synchrotron Radiation Lab.
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  5. Chinese Academy of Sciences (CAS), Hefei (China). High Magnetic Field Lab.
  6. Univ. of Science and Technology of China, Hefei (China). National Synchrotron Radiation Lab.; Chinese Academy of Sciences (CAS), Beijing (China). Beijing Advanced Sciences and Innovation Center

Much like epitaxial strain, engineering oxygen octahedral rotations (OORs) in perovskite oxide thin films can be a powerful means of manipulating their physical and chemical properties. Here, it is demonstrated that the fundamental character of the metal-insulator transition (MIT) can be sensitively controlled by the structure of the oxygen sublattice for NdNiO3 thin films grown epitaxially on NdGaO3 (110) substrates. The MIT is sharp and hysteretic for a Ni-O-Ni bond angle of 154.0° (6 nm thick film) like the bulk behavior, while it is diffuse and largely nonhysteretic for a bond angle of 149.5° (3 nm thick film), stemming from the smaller bond angle of the NdGaO3 substrate. Using synchrotron X-ray diffraction to quantify the geometric framework of the oxygen sublattice, it is found that the influence of the substrate OORs propagates and decays after a few nanometers into the ultrathin film. The sublattice structure in the 6 nm thick film is similar to that for bulk NdNiO3, leading to the sharp and hysteretic MIT.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); China Scholarship Council; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1574391
Alternate ID(s):
OSTI ID: 1532581
Journal Information:
Advanced Materials Interfaces, Vol. 6, Issue 17; ISSN 2196-7350
Publisher:
Wiley-VCHCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

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Figures / Tables (6)