Interfacial Octahedral Manipulation Imparts Hysteresis-Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure
Abstract
Much like epitaxial strain, engineering oxygen octahedral rotations (OORs) in perovskite oxide thin films can be a powerful means of manipulating their physical and chemical properties. Here, it is demonstrated that the fundamental character of the metal-insulator transition (MIT) can be sensitively controlled by the structure of the oxygen sublattice for NdNiO3 thin films grown epitaxially on NdGaO3 (110) substrates. The MIT is sharp and hysteretic for a Ni-O-Ni bond angle of 154.0° (6 nm thick film) like the bulk behavior, while it is diffuse and largely nonhysteretic for a bond angle of 149.5° (3 nm thick film), stemming from the smaller bond angle of the NdGaO3 substrate. Using synchrotron X-ray diffraction to quantify the geometric framework of the oxygen sublattice, it is found that the influence of the substrate OORs propagates and decays after a few nanometers into the ultrathin film. The sublattice structure in the 6 nm thick film is similar to that for bulk NdNiO3, leading to the sharp and hysteretic MIT.
- Authors:
-
[3];
- Univ. of Science and Technology of China, Hefei (China). National Synchrotron Radiation Lab.; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Univ. of Science and Technology of China, Hefei (China). National Synchrotron Radiation Lab.
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Chinese Academy of Sciences (CAS), Hefei (China). High Magnetic Field Lab.
- Univ. of Science and Technology of China, Hefei (China). National Synchrotron Radiation Lab.; Chinese Academy of Sciences (CAS), Beijing (China). Beijing Advanced Sciences and Innovation Center
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); China Scholarship Council; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1574391
- Alternate Identifier(s):
- OSTI ID: 1532581
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 17; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; NdNiO3 oxide heterostructure; half-order Bragg reflection; oxygen octahedral tilting and rotation; synchrotron X-ray techniques
Citation Formats
Dong, Yongqi, Ma, Zhiyuan, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, and Gao, Chen. Interfacial Octahedral Manipulation Imparts Hysteresis-Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure. United States: N. p., 2019.
Web. doi:10.1002/admi.201900644.
Dong, Yongqi, Ma, Zhiyuan, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, & Gao, Chen. Interfacial Octahedral Manipulation Imparts Hysteresis-Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure. United States. https://doi.org/10.1002/admi.201900644
Dong, Yongqi, Ma, Zhiyuan, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, and Gao, Chen. Tue .
"Interfacial Octahedral Manipulation Imparts Hysteresis-Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure". United States. https://doi.org/10.1002/admi.201900644. https://www.osti.gov/servlets/purl/1574391.
@article{osti_1574391,
title = {Interfacial Octahedral Manipulation Imparts Hysteresis-Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure},
author = {Dong, Yongqi and Ma, Zhiyuan and Luo, Zhenlin and Zhou, Hua and Fong, Dillon D. and Wu, Wenbin and Gao, Chen},
abstractNote = {Much like epitaxial strain, engineering oxygen octahedral rotations (OORs) in perovskite oxide thin films can be a powerful means of manipulating their physical and chemical properties. Here, it is demonstrated that the fundamental character of the metal-insulator transition (MIT) can be sensitively controlled by the structure of the oxygen sublattice for NdNiO3 thin films grown epitaxially on NdGaO3 (110) substrates. The MIT is sharp and hysteretic for a Ni-O-Ni bond angle of 154.0° (6 nm thick film) like the bulk behavior, while it is diffuse and largely nonhysteretic for a bond angle of 149.5° (3 nm thick film), stemming from the smaller bond angle of the NdGaO3 substrate. Using synchrotron X-ray diffraction to quantify the geometric framework of the oxygen sublattice, it is found that the influence of the substrate OORs propagates and decays after a few nanometers into the ultrathin film. The sublattice structure in the 6 nm thick film is similar to that for bulk NdNiO3, leading to the sharp and hysteretic MIT.},
doi = {10.1002/admi.201900644},
journal = {Advanced Materials Interfaces},
number = 17,
volume = 6,
place = {United States},
year = {2019},
month = {7}
}
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Figure 1: a) Schematic illustrating pseudo-cubic octahedral rotations with the rotation angles $α$, $β$ and $γ$, about the [100]pc, [010]pc, and [001]pc, respectively. b) Depiction of the 2$\times$2$\times$2 supercell along the [100]pc direction with (+) rotation; the dashed square represents the pseudo-cubic unit cell. c) Projected image illustrating how octahedralmore »
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