Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures

Rice, Anthony D.; Lee, Choong Hee; Fluegel, Brian; Norman, Andrew G.; Nelson, Jocienne N.; Jiang, Chun Sheng; Steger, Mark; McGott, Deborah L.; Walker, Patrick; Alberi, Kirstin

doi:10.1002/adfm.202111470

Title: Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures

Journal Article · 12 February 2022 · Advanced Functional Materials

DOI: https://doi.org/10.1002/adfm.202111470 · OSTI ID:1845966

Rice, Anthony D. ^[1]; Lee, Choong Hee ^[1]; Fluegel, Brian ^[1];

^[1]; Nelson, Jocienne N. ^[1]; Jiang, Chun Sheng ^[1]; Steger, Mark ^[1]; McGott, Deborah L. ^[1]; Walker, Patrick ^[1];

^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Exploiting the extraordinary transport and optical properties of 3D topological semimetals for device applications requires epitaxial integration with semiconductors to carefully control carrier transport, yet no studies have established heteroepitaxy on top of any topological semimetals to date. Here, a novel approach toward fabricating heterostructures is demonstrated by epitaxially incorporating the Dirac semimetal Cd₃As₂ between Zn_xCd_1-xTe and CdTe layers via molecular beam epitaxy on GaAs (001) substrates. The approach utilizes the higher energy (001) surface of Cd₃As₂ to stabilize 2D epitaxy of zinc blende semiconductors. To demonstrate the impact heterostructure formation offers to device performance, an all-epitaxial, barrier-type vertical photodetector is fabricated that accesses a different carrier separation mechanism than previously reported non-epitaxial junctions and consequently exhibits significantly reduced dark currents. Finally, the results highlight the important role that epitaxial integration can play in accessing advanced architectures for topological semimetal-based devices.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1845966

Report Number(s):: NREL/JA-5K00-81744; MainId:82517; UUID:b69bf25b-32bd-4750-9787-55bbb045de20; MainAdminID:63860

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 21 Vol. 32; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
heteroepitaxy
photodetector
topological semimetal

Title: Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures

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