Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
Abstract
Abstract Donor spins in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon.
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1835348
- Grant/Contract Number:
- NA0003525
- Resource Type:
- Published Article
- Journal Name:
- New Journal of Physics
- Additional Journal Information:
- Journal Name: New Journal of Physics Journal Volume: 23 Journal Issue: 7; Journal ID: ISSN 1367-2630
- Publisher:
- IOP Publishing
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Joecker, Benjamin, Baczewski, Andrew D., Gamble, John K., Pla, Jarryd J., Saraiva, André, and Morello, Andrea. Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory. United Kingdom: N. p., 2021.
Web. doi:10.1088/1367-2630/ac0abf.
Joecker, Benjamin, Baczewski, Andrew D., Gamble, John K., Pla, Jarryd J., Saraiva, André, & Morello, Andrea. Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory. United Kingdom. https://doi.org/10.1088/1367-2630/ac0abf
Joecker, Benjamin, Baczewski, Andrew D., Gamble, John K., Pla, Jarryd J., Saraiva, André, and Morello, Andrea. Tue .
"Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory". United Kingdom. https://doi.org/10.1088/1367-2630/ac0abf.
@article{osti_1835348,
title = {Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory},
author = {Joecker, Benjamin and Baczewski, Andrew D. and Gamble, John K. and Pla, Jarryd J. and Saraiva, André and Morello, Andrea},
abstractNote = {Abstract Donor spins in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon.},
doi = {10.1088/1367-2630/ac0abf},
journal = {New Journal of Physics},
number = 7,
volume = 23,
place = {United Kingdom},
year = {Tue Jul 13 00:00:00 EDT 2021},
month = {Tue Jul 13 00:00:00 EDT 2021}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1088/1367-2630/ac0abf
https://doi.org/10.1088/1367-2630/ac0abf
Other availability
Search WorldCat to find libraries that may hold this journal
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Storing quantum information for 30 seconds in a nanoelectronic device
journal, October 2014
- Muhonen, Juha T.; Dehollain, Juan P.; Laucht, Arne
- Nature Nanotechnology, Vol. 9, Issue 12
A silicon-based nuclear spin quantum computer
journal, May 1998
- Kane, B. E.
- Nature, Vol. 393, Issue 6681
An improved effective-mass-theory equation for phosphorus doped in silicon
journal, January 2013
- Hui, H. T.
- Solid State Communications, Vol. 154
Electronic states and wavefunctions of diatomic donor molecular ions in silicon: multi-valley envelope function theory
journal, January 2014
- Klymenko, M. V.; Remacle, F.
- Journal of Physics: Condensed Matter, Vol. 26, Issue 6
A single-atom electron spin qubit in silicon
journal, September 2012
- Pla, Jarryd J.; Tan, Kuan Y.; Dehollain, Juan P.
- Nature, Vol. 489, Issue 7417
A two-qubit gate between phosphorus donor electrons in silicon
journal, July 2019
- He, Y.; Gorman, S. K.; Keith, D.
- Nature, Vol. 571, Issue 7765
Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
journal, January 2021
- Ma̧dzik, Mateusz T.; Laucht, Arne; Hudson, Fay E.
- Nature Communications, Vol. 12, Issue 1
Valley interference and spin exchange at the atomic scale in silicon
journal, November 2020
- Voisin, B.; Bocquel, J.; Tankasala, A.
- Nature Communications, Vol. 11, Issue 1
Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO interface
journal, July 2012
- Baena, A.; Saraiva, A. L.; Koiller, Belita
- Physical Review B, Vol. 86, Issue 3
Coherent coupling between a quantum dot and a donor in silicon
journal, October 2017
- Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin
- Nature Communications, Vol. 8, Issue 1
Multivalley Effective-Mass Approximation for Donor States in Silicon. I. Shallow-Level Group-V Impurities
journal, November 1971
- Ning, T. H.; Sah, C. T.
- Physical Review B, Vol. 4, Issue 10
Quantum control and manipulation of donor electrons in Si-based quantum computing
journal, June 2009
- Calderón, M. J.; Saraiva, A.; Koiller, Belita
- Journal of Applied Physics, Vol. 105, Issue 12
Theory of localized states in semiconductors. I. New results using an old method
journal, July 1974
- Pantelides, Sokrates T.; Sah, C. T.
- Physical Review B, Vol. 10, Issue 2
Single-shot readout of an electron spin in silicon
journal, September 2010
- Morello, Andrea; Pla, Jarryd J.; Zwanenburg, Floris A.
- Nature, Vol. 467, Issue 7316
Charge Noise Spectroscopy Using Coherent Exchange Oscillations in a Singlet-Triplet Qubit
journal, April 2013
- Dial, O. E.; Shulman, M. D.; Harvey, S. P.
- Physical Review Letters, Vol. 110, Issue 14
A single-atom transistor
journal, February 2012
- Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta
- Nature Nanotechnology, Vol. 7, Issue 4
Optimization of a solid-state electron spin qubit using gate set tomography
journal, October 2016
- Dehollain, Juan P.; Muhonen, Juha T.; Blume-Kohout, Robin
- New Journal of Physics, Vol. 18, Issue 10
Theory of one and two donors in silicon
journal, March 2015
- Saraiva, A. L.; Baena, A.; Calderón, M. J.
- Journal of Physics: Condensed Matter, Vol. 27, Issue 15
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
journal, March 2015
- Muhonen, J. T.; Laucht, A.; Simmons, S.
- Journal of Physics: Condensed Matter, Vol. 27, Issue 15
Determination of the Donor Pair Exchange Energy in Phosphorus-Doped Silicon
journal, January 1970
- Cullis, P. R.; Marko, J. R.
- Physical Review B, Vol. 1, Issue 2
Molecular orbital calculations of two-electron states for P-donor solid-state spin qubits
journal, March 2006
- Kettle, L. M.; Goan, Hsi-Sheng; Smith, Sean C.
- Physical Review B, Vol. 73, Issue 11
An Exchange-Coupled Donor Molecule in Silicon
journal, September 2014
- Gonzalez-Zalba, M. F.; Saraiva, André; Calderón, María J.
- Nano Letters, Vol. 14, Issue 10
Computation of the Stark effect in P impurity states in silicon
journal, July 2006
- Debernardi, A.; Baldereschi, A.; Fanciulli, M.
- Physical Review B, Vol. 74, Issue 3
Extending the coherence of a quantum dot hybrid qubit
journal, August 2017
- Thorgrimsson, Brandur; Kim, Dohun; Yang, Yuan-Chi
- npj Quantum Information, Vol. 3, Issue 1
Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon
journal, May 2017
- Klymenko, M. V.; Rogge, S.; Remacle, F.
- Physical Review B, Vol. 95, Issue 20
Valley splitting of single-electron Si MOS quantum dots
journal, December 2016
- Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias
- Applied Physics Letters, Vol. 109, Issue 25
Comparison of low frequency charge noise in identically patterned Si/SiO 2 and Si/SiGe quantum dots
journal, June 2016
- Freeman, Blake M.; Schoenfield, Joshua S.; Jiang, HongWen
- Applied Physics Letters, Vol. 108, Issue 25
Multivalley spin splitting of states for sulfur, selenium, and tellurium donors in silicon
journal, February 1982
- Grimmeiss, H. G.; Janzén, E.; Larsson, K.
- Physical Review B, Vol. 25, Issue 4
Uniaxial Stress and Magnetic Field Effects on Far-Infrared Photoconductivity of D - Centers in P, As and Li Doped Si Crystals
journal, July 1982
- Narita, Shin-ichiro; Shinbashi, Takahisa; Kobayashi, Michihiro
- Journal of the Physical Society of Japan, Vol. 51, Issue 7