Low Power Thermal Tuning in Resonant Vertical Junction Silicon Modulators Through Substrate Removal

Journal Article · Tue Apr 10 00:00:00 UTC 2018 · IEEE Photonics Journal (Online)

DOI: https://doi.org/10.1109/jphot.2018.2824026 · OSTI ID:1778892

Martinez, Nicholas D.  ^[1]; Derose, Christopher T. ^[1]; Jarecki, Robert ^[1]; Starbuck, A. L. ^[1]; Pomerene, Andrew T. ^[1]; Trotter, Douglas C. ^[1]; Lentine, Anthony L. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We report on thermally tunable modulators, with efficiencies up to 2.16 nm/mW. Efficient performance was accomplished through integrated heater design and Si substrate removal, where the heavily N+ doped Si heater element is integrated into the body of the microdisk. For comparison, modulators with an external heater design were also tested with small diameter Si substrate removed. The external heavily doped N+Si heater bars were fabricated outside the diameter of the microdisk. Efficiency for external heater design was 0.68 nm/mW with substrate removed. Both types of thermal modulators were experimentally tested and simulated for a complete understanding of the Si substrate's influence on heat dissipation with both types benefiting significantly from substrate removal. Agreement between simulation and experimental results was greater than 80% in all instances.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1778892
• Report Number(s): SAND--2021-4407J; 695483
• Journal Information: IEEE Photonics Journal (Online), Journal Name: IEEE Photonics Journal (Online) Journal Issue: 3 Vol. 10; ISSN 1943-0655
• Publisher: IEEECopyright Statement
• Country of Publication: United States
• Language: English