Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu2Se Composites
Abstract
Abstract The applications of mixed ionic–electronic conductors are limited due to phase instability under a high direct current and large temperature difference. Here, it is shown that Cu 2 Se is stabilized through regulating the behaviors of Cu + ions and electrons in a Schottky heterojunction between the Cu 2 Se host matrix and in‐situ‐formed BiCuSeO nanoparticles. The accumulation of Cu + ions via an ionic capacitive effect at the Schottky junction under the direct current modifies the space‐charge distribution in the electric double layer, which blocks the long‐range migration of Cu + and produces a drastic reduction of Cu + ion migration by nearly two orders of magnitude. Moreover, this heterojunction impedes electrons transferring from BiCuSeO to Cu 2 Se, obstructing the reduction reaction of Cu + into Cu metal at the interface and hence stabilizes the β‐Cu 2 Se phase. Furthermore, incorporation of BiCuSeO in Cu 2 Se optimizes the carrier concentration and intensifies phonon scattering, contributing to the peak figure of merit ZT value of ≈ 2.7 at 973 K and high average ZT value of ≈ 1.5 between 400 and 973 K for the Cu 2 Se/BiCuSeO composites. This discovery provides a new avenue for stabilizing mixedmore »
- Authors:
-
[1]
- Wuhan Univ. of Technology (China)
- Wuhan Univ. of Technology (China); Northwestern Univ., Evanston, IL (United States)
- Univ. of Washington, Seattle, WA (United States)
- Univ. of Michigan, Ann Arbor, MI (United States)
- Northwestern Univ., Evanston, IL (United States)
- Publication Date:
- Research Org.:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Fundamental Research Funds for the Central Universities; 111 Project; Natural Science Foundation of China; National Key Research and Development Program of China
- OSTI Identifier:
- 1778888
- Alternate Identifier(s):
- OSTI ID: 1785849
- Grant/Contract Number:
- SC0014520; 2019III012GX; 2020III002GX; B07040; 51972256; 51632006; 51521001; 51872219; 2019YFA0704900
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 32; Journal Issue: 40; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Cu 2Se; mixed ionic–electronic conductors; Schottky junction; stable thermoelectric materials; thermoelectric properties
Citation Formats
Yang, Dongwang, Su, Xianli, Li, Jun, Bai, Hui, Wang, Shanyu, Li, Zhi, Tang, Hao, Tang, Kechen, Luo, Tingting, Yan, Yonggao, Wu, Jinsong, Yang, Jihui, Zhang, Qingjie, Uher, Ctirad, Kanatzidis, Mercouri G., and Tang, Xinfeng. Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu2Se Composites. United States: N. p., 2020.
Web. doi:10.1002/adma.202003730.
Yang, Dongwang, Su, Xianli, Li, Jun, Bai, Hui, Wang, Shanyu, Li, Zhi, Tang, Hao, Tang, Kechen, Luo, Tingting, Yan, Yonggao, Wu, Jinsong, Yang, Jihui, Zhang, Qingjie, Uher, Ctirad, Kanatzidis, Mercouri G., & Tang, Xinfeng. Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu2Se Composites. United States. https://doi.org/10.1002/adma.202003730
Yang, Dongwang, Su, Xianli, Li, Jun, Bai, Hui, Wang, Shanyu, Li, Zhi, Tang, Hao, Tang, Kechen, Luo, Tingting, Yan, Yonggao, Wu, Jinsong, Yang, Jihui, Zhang, Qingjie, Uher, Ctirad, Kanatzidis, Mercouri G., and Tang, Xinfeng. Wed .
"Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu2Se Composites". United States. https://doi.org/10.1002/adma.202003730. https://www.osti.gov/servlets/purl/1778888.
@article{osti_1778888,
title = {Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu2Se Composites},
author = {Yang, Dongwang and Su, Xianli and Li, Jun and Bai, Hui and Wang, Shanyu and Li, Zhi and Tang, Hao and Tang, Kechen and Luo, Tingting and Yan, Yonggao and Wu, Jinsong and Yang, Jihui and Zhang, Qingjie and Uher, Ctirad and Kanatzidis, Mercouri G. and Tang, Xinfeng},
abstractNote = {Abstract The applications of mixed ionic–electronic conductors are limited due to phase instability under a high direct current and large temperature difference. Here, it is shown that Cu 2 Se is stabilized through regulating the behaviors of Cu + ions and electrons in a Schottky heterojunction between the Cu 2 Se host matrix and in‐situ‐formed BiCuSeO nanoparticles. The accumulation of Cu + ions via an ionic capacitive effect at the Schottky junction under the direct current modifies the space‐charge distribution in the electric double layer, which blocks the long‐range migration of Cu + and produces a drastic reduction of Cu + ion migration by nearly two orders of magnitude. Moreover, this heterojunction impedes electrons transferring from BiCuSeO to Cu 2 Se, obstructing the reduction reaction of Cu + into Cu metal at the interface and hence stabilizes the β‐Cu 2 Se phase. Furthermore, incorporation of BiCuSeO in Cu 2 Se optimizes the carrier concentration and intensifies phonon scattering, contributing to the peak figure of merit ZT value of ≈ 2.7 at 973 K and high average ZT value of ≈ 1.5 between 400 and 973 K for the Cu 2 Se/BiCuSeO composites. This discovery provides a new avenue for stabilizing mixed ionic–electronic conduction thermoelectrics, and gives fresh insights into controlling ion migration in these ionic‐transport‐dominated materials.},
doi = {10.1002/adma.202003730},
journal = {Advanced Materials},
number = 40,
volume = 32,
place = {United States},
year = {Wed Sep 02 00:00:00 EDT 2020},
month = {Wed Sep 02 00:00:00 EDT 2020}
}
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