Strain-Induced Trapping of Indirect Excitons in MoSe2/WSe2 Heterostructures

Wang, Wei; Ma, Xuedan

doi:10.1021/acsphotonics.0c00567

Title: Strain-Induced Trapping of Indirect Excitons in MoSe₂/WSe₂ Heterostructures

Abstract

Understanding and control of excitons in transition metal dichalcogenide (TMD) materials are essential for the exploration of the rich many-body physics in TMDs and their applications in photonic and optoelectronic devices. Local strain modulation has been utilized as an effective approach for creating potential traps and localizing intralayer excitons in TMD monolayers. Here, we investigate the effect of strains on indirect excitons in TMD heterostructures. The emergence of narrow spectral peaks from the strained sites together with their drastically reduced lifetimes indicates the formation of potential traps in the heterostructures and the trapping of indirect excitons in them. The absence of photon-antibunching from these trapped indirect excitons further reveals their weak localization in the potential traps. Here, our study indicates that, compared to the case of intralayer excitons, narrower potential traps are required for obtaining highly localized indirect excitons due to their unique properties. These findings have important implications for creating long-wavelength quantum emitters in TMD heterostructures and the exploration of indirect exciton condensation and motion in TMDs.

Authors:

Wang, Wei ^[1];

^[2]

Univ. of Chicago, IL (United States)
Univ. of Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)

Publication Date:: Mon Jul 27 00:00:00 EDT 2020

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1756848

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: ACS Photonics

Additional Journal Information:: Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2330-4022

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Exciton delocalization; exciton trapping; indirect excitons; photon-antibunching; strain field; transition metal dichalcogenide heterostructures; excitons; genetics; monolayers; insulators; heterostructures

Citation Formats


                    Wang, Wei, and Ma, Xuedan. Strain-Induced Trapping of Indirect Excitons in MoSe2/WSe2 Heterostructures.  United States: N. p., 2020. 
Web.  doi:10.1021/acsphotonics.0c00567.

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                    Wang, Wei, & Ma, Xuedan. Strain-Induced Trapping of Indirect Excitons in MoSe2/WSe2 Heterostructures.  United States.  https://doi.org/10.1021/acsphotonics.0c00567

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                    Wang, Wei, and Ma, Xuedan. Mon .  
"Strain-Induced Trapping of Indirect Excitons in MoSe2/WSe2 Heterostructures".  United States.  https://doi.org/10.1021/acsphotonics.0c00567.  https://www.osti.gov/servlets/purl/1756848.

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@article{osti_1756848,

  title        = {Strain-Induced Trapping of Indirect Excitons in MoSe2/WSe2 Heterostructures},

  author       = {Wang, Wei and Ma, Xuedan},

  abstractNote = {Understanding and control of excitons in transition metal dichalcogenide (TMD) materials are essential for the exploration of the rich many-body physics in TMDs and their applications in photonic and optoelectronic devices. Local strain modulation has been utilized as an effective approach for creating potential traps and localizing intralayer excitons in TMD monolayers. Here, we investigate the effect of strains on indirect excitons in TMD heterostructures. The emergence of narrow spectral peaks from the strained sites together with their drastically reduced lifetimes indicates the formation of potential traps in the heterostructures and the trapping of indirect excitons in them. The absence of photon-antibunching from these trapped indirect excitons further reveals their weak localization in the potential traps. Here, our study indicates that, compared to the case of intralayer excitons, narrower potential traps are required for obtaining highly localized indirect excitons due to their unique properties. These findings have important implications for creating long-wavelength quantum emitters in TMD heterostructures and the exploration of indirect exciton condensation and motion in TMDs.},

  doi          = {10.1021/acsphotonics.0c00567},

  journal      = {ACS Photonics},

  number       = 9,

  volume       = 7,

  place        = {United States},

  year         = {Mon Jul 27 00:00:00 EDT 2020},

  month        = {Mon Jul 27 00:00:00 EDT 2020}

}

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Title: Strain-Induced Trapping of Indirect Excitons in MoSe2/WSe2 Heterostructures

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Citation Formats

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

Two-dimensional atomic crystals journal, July 2005

Single-layer MoS2 transistors journal, January 2011

Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures journal, February 2015

Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS 2 /MoS 2 /hBN journal, February 2018

Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures journal, August 2017

Interlayer valley excitons in heterobilayers of transition metal dichalcogenides journal, August 2018

Observation of ultralong valley lifetime in WSe 2 /MoS 2 heterostructures journal, July 2017

Indirect excitons in van der Waals heterostructures at room temperature journal, May 2018

Exciton Radiative Lifetimes in Two-Dimensional Transition Metal Dichalcogenides journal, March 2015

Interlayer Exciton Optoelectronics in a 2D Heterostructure p–n Junction journal, January 2017

Electrical control of interlayer exciton dynamics in atomically thin heterostructures journal, November 2019

Directional interlayer spin-valley transfer in two-dimensional heterostructures journal, December 2016

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure journal, February 2016

Probing the Interlayer Exciton Physics in a MoS 2 /MoSe 2 /MoS 2 van der Waals Heterostructure journal, September 2017

Electronic Structural Moiré Pattern Effects on MoS 2 /MoSe 2 2D Heterostructures journal, October 2013

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers journal, September 2014

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers journal, January 2017

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers journal, February 2019

Evidence for moiré excitons in van der Waals heterostructures journal, February 2019

Observation of moiré excitons in WSe2/WS2 heterostructure superlattices journal, February 2019

Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe 2 journal, June 2016

Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor journal, May 2017

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS 2 journal, July 2015

Efficient strain modulation of 2D materials via polymer encapsulation journal, March 2020

Creation of Single-Photon Emitters in WSe 2 Monolayers Using Nanometer-Sized Gold Tips journal, July 2020

Stretching quantum wells: A method for trapping free carriers in GaAs heterostructures journal, October 1999

Transition to a Bose–Einstein condensate and relaxation explosion of excitons at sub-Kelvin temperatures journal, May 2011

Observation of ultrahigh mobility excitons in a strain field by space- and time-resolved spectroscopy at subkelvin temperatures journal, July 2019

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping journal, April 2014

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride journal, July 2014

Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope journal, August 2017

Indirect Excitons and Trions in MoSe 2 /WSe 2 van der Waals Heterostructures journal, February 2020

Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe 2 /WSe 2 van der Waals Heterostructures journal, April 2017

Large-scale quantum-emitter arrays in atomically thin semiconductors journal, May 2017

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure journal, June 2017

Influence of Exciton Dimensionality on Spectral Diffusion of Single-Walled Carbon Nanotubes journal, September 2014

Size-Dependent Biexciton Quantum Yields and Carrier Dynamics of Quasi-Two-Dimensional Core/Shell Nanoplatelets journal, September 2017

Single Molecule Quantum-Confined Stark Effect Measurements of Semiconductor Nanoparticles at Room Temperature journal, October 2012

Indirect Excitons in Elevated Traps journal, May 2009

Valley dynamics probed through charged and neutral exciton emission in monolayer WSe 2 journal, August 2014

Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers journal, October 2017

Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe 2 journal, August 2018

Defect creation in WSe 2 with a microsecond photoluminescence lifetime by focused ion beam irradiation journal, January 2020

Principles of Nano-Optics book, January 2006

Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets journal, October 2019

Layer-Coupled States Facilitate Ultrafast Charge Transfer in a Transition Metal Dichalcogenide Trilayer Heterostructure journal, September 2018

Ultrafast Charge Separation and Indirect Exciton Formation in a MoS 2 –MoSe 2 van der Waals Heterostructure journal, November 2014

Interfacial Charge Transfer Circumventing Momentum Mismatch at Two-Dimensional van der Waals Heterojunctions journal, May 2017

Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures journal, August 2016

Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides journal, September 2015

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS 2 , Mo S e 2 , WS 2 , and WS e 2 journal, November 2014

Two dimensions and one photon journal, May 2015

Room-temperature single-photon generation from solitary dopants of carbon nanotubes journal, July 2015

Linewidth dependence of radiative exciton lifetimes in quantum wells journal, November 1987

Influences of Exciton Diffusion and Exciton-Exciton Annihilation on Photon Emission Statistics of Carbon Nanotubes journal, July 2015

Evidence for Barrierless Auger Recombination in PbSe Nanocrystals: A Pressure-Dependent Study of Transient Optical Absorption journal, November 2008

Universal Size-Dependent Trend in Auger Recombination in Direct-Gap and Indirect-Gap Semiconductor Nanocrystals journal, May 2009

Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots journal, February 2000

Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide journal, September 2014

Bright trion emission from semiconductor nanoplatelets journal, May 2020

High-temperature superfluidity with indirect excitons in van der Waals heterostructures journal, July 2014

Exciton Condensate in Semiconductor Quantum Well Structures journal, February 1995

Effect of Quantum and Dielectric Confinement on the Exciton−Exciton Interaction Energy in Type II Core/Shell Semiconductor Nanocrystals journal, January 2007

Suppressed Auger Recombination in “Giant” Nanocrystals Boosts Optical Gain Performance journal, October 2009

Disordered electronic systems journal, April 1985

k · p theory for two-dimensional transition metal dichalcogenide semiconductors journal, April 2015

Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields journal, September 2019

Quantum Calligraphy: Writing Single-Photon Emitters in a Two-Dimensional Materials Platform journal, December 2018

Strain-Tunable Single Photon Sources in WSe 2 Monolayers journal, September 2019

Bose–Einstein condensation and indirect excitons: a review journal, March 2017

Title: Strain-Induced Trapping of Indirect Excitons in MoSe₂/WSe₂ Heterostructures

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Two-dimensional atomic crystals
journal, July 2005

Single-layer MoS₂ transistors
journal, January 2011

Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
journal, February 2015

Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS ₂ /MoS ₂ /hBN
journal, February 2018

Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures
journal, August 2017

Interlayer valley excitons in heterobilayers of transition metal dichalcogenides
journal, August 2018

Observation of ultralong valley lifetime in WSe ₂ /MoS ₂ heterostructures
journal, July 2017

Indirect excitons in van der Waals heterostructures at room temperature
journal, May 2018

Exciton Radiative Lifetimes in Two-Dimensional Transition Metal Dichalcogenides
journal, March 2015

Interlayer Exciton Optoelectronics in a 2D Heterostructure p–n Junction
journal, January 2017

Electrical control of interlayer exciton dynamics in atomically thin heterostructures
journal, November 2019

Directional interlayer spin-valley transfer in two-dimensional heterostructures
journal, December 2016

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure
journal, February 2016

Probing the Interlayer Exciton Physics in a MoS ₂ /MoSe ₂ /MoS ₂ van der Waals Heterostructure
journal, September 2017

Electronic Structural Moiré Pattern Effects on MoS ₂ /MoSe ₂ 2D Heterostructures
journal, October 2013

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers
journal, September 2014

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS ₂ /WSe ₂ hetero-bilayers
journal, January 2017

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers
journal, February 2019

Evidence for moiré excitons in van der Waals heterostructures
journal, February 2019

Observation of moiré excitons in WSe2/WS2 heterostructure superlattices
journal, February 2019

Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe ₂
journal, June 2016

Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
journal, May 2017

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS ₂
journal, July 2015

Efficient strain modulation of 2D materials via polymer encapsulation
journal, March 2020

Creation of Single-Photon Emitters in WSe ₂ Monolayers Using Nanometer-Sized Gold Tips
journal, July 2020

Stretching quantum wells: A method for trapping free carriers in GaAs heterostructures
journal, October 1999

Transition to a Bose–Einstein condensate and relaxation explosion of excitons at sub-Kelvin temperatures
journal, May 2011

Observation of ultrahigh mobility excitons in a strain field by space- and time-resolved spectroscopy at subkelvin temperatures
journal, July 2019

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
journal, July 2014

Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope
journal, August 2017

Indirect Excitons and Trions in MoSe ₂ /WSe ₂ van der Waals Heterostructures
journal, February 2020

Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe ₂ /WSe ₂ van der Waals Heterostructures
journal, April 2017

Large-scale quantum-emitter arrays in atomically thin semiconductors
journal, May 2017

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure
journal, June 2017

Influence of Exciton Dimensionality on Spectral Diffusion of Single-Walled Carbon Nanotubes
journal, September 2014

Size-Dependent Biexciton Quantum Yields and Carrier Dynamics of Quasi-Two-Dimensional Core/Shell Nanoplatelets
journal, September 2017

Single Molecule Quantum-Confined Stark Effect Measurements of Semiconductor Nanoparticles at Room Temperature
journal, October 2012

Indirect Excitons in Elevated Traps
journal, May 2009

Valley dynamics probed through charged and neutral exciton emission in monolayer ${WSe}_{2}$
journal, August 2014

Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers
journal, October 2017

Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe 2
journal, August 2018

Defect creation in WSe ₂ with a microsecond photoluminescence lifetime by focused ion beam irradiation
journal, January 2020

Principles of Nano-Optics
book, January 2006

Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets
journal, October 2019

Layer-Coupled States Facilitate Ultrafast Charge Transfer in a Transition Metal Dichalcogenide Trilayer Heterostructure
journal, September 2018

Ultrafast Charge Separation and Indirect Exciton Formation in a MoS ₂ –MoSe ₂ van der Waals Heterostructure
journal, November 2014

Interfacial Charge Transfer Circumventing Momentum Mismatch at Two-Dimensional van der Waals Heterojunctions
journal, May 2017

Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures
journal, August 2016

Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides
journal, September 2015

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: ${MoS}_{2}$ , $Mo S e_{2}$ , ${WS}_{2}$ , and $WS e_{2}$
journal, November 2014

Two dimensions and one photon
journal, May 2015

Room-temperature single-photon generation from solitary dopants of carbon nanotubes
journal, July 2015

Linewidth dependence of radiative exciton lifetimes in quantum wells
journal, November 1987

Influences of Exciton Diffusion and Exciton-Exciton Annihilation on Photon Emission Statistics of Carbon Nanotubes
journal, July 2015

Evidence for Barrierless Auger Recombination in PbSe Nanocrystals: A Pressure-Dependent Study of Transient Optical Absorption
journal, November 2008

Universal Size-Dependent Trend in Auger Recombination in Direct-Gap and Indirect-Gap Semiconductor Nanocrystals
journal, May 2009

Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots
journal, February 2000

Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide
journal, September 2014

Bright trion emission from semiconductor nanoplatelets
journal, May 2020

High-temperature superfluidity with indirect excitons in van der Waals heterostructures
journal, July 2014

Exciton Condensate in Semiconductor Quantum Well Structures
journal, February 1995

Effect of Quantum and Dielectric Confinement on the Exciton−Exciton Interaction Energy in Type II Core/Shell Semiconductor Nanocrystals
journal, January 2007

Suppressed Auger Recombination in “Giant” Nanocrystals Boosts Optical Gain Performance
journal, October 2009

Disordered electronic systems
journal, April 1985

k · p theory for two-dimensional transition metal dichalcogenide semiconductors
journal, April 2015

Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields
journal, September 2019

Quantum Calligraphy: Writing Single-Photon Emitters in a Two-Dimensional Materials Platform
journal, December 2018

Strain-Tunable Single Photon Sources in WSe ₂ Monolayers
journal, September 2019

Bose–Einstein condensation and indirect excitons: a review
journal, March 2017