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Title: Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures

Abstract

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe2/WSe2 heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, that is, indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures [Deilmann, T.; Thygesen, K. S. Nano Lett. 2018, 18, 1460]. We also report on the realization of IXs with a luminescence line width reaching 4 meV at low temperatures. An enhancement of IX luminescence intensity and the narrowmore » line width are observed in localized spots.« less

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [2];  [2];  [3];  [3];  [3]
  1. Univ. of California, San Diego, La Jolla, CA (United States)
  2. Intel Corporation, Hillsboro, OR (United States)
  3. Univ. of Manchester (United Kingdom)
Publication Date:
Research Org.:
Univ. of California, San Diego, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Natural Environment Research Council (NERC)
OSTI Identifier:
1657334
Alternate Identifier(s):
OSTI ID: 1657547; OSTI ID: 1773971
Grant/Contract Number:  
FG02-07ER46449; 1905478; 1640173
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 20; Journal Issue: 3; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; indirect excitons; trions; van der Waals heterostructures; 2D materials

Citation Formats

Calman, E. V., Fowler-Gerace, L. H., Choksy, D. J., Butov, L. V., Nikonov, D. E., Young, I. A., Hu, S., Mishchenko, A., and Geim, A. K. Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures. United States: N. p., 2020. Web. doi:10.1021/acs.nanolett.9b05086.
Calman, E. V., Fowler-Gerace, L. H., Choksy, D. J., Butov, L. V., Nikonov, D. E., Young, I. A., Hu, S., Mishchenko, A., & Geim, A. K. Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures. United States. https://doi.org/10.1021/acs.nanolett.9b05086
Calman, E. V., Fowler-Gerace, L. H., Choksy, D. J., Butov, L. V., Nikonov, D. E., Young, I. A., Hu, S., Mishchenko, A., and Geim, A. K. Tue . "Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures". United States. https://doi.org/10.1021/acs.nanolett.9b05086. https://www.osti.gov/servlets/purl/1657334.
@article{osti_1657334,
title = {Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures},
author = {Calman, E. V. and Fowler-Gerace, L. H. and Choksy, D. J. and Butov, L. V. and Nikonov, D. E. and Young, I. A. and Hu, S. and Mishchenko, A. and Geim, A. K.},
abstractNote = {Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe2/WSe2 heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, that is, indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures [Deilmann, T.; Thygesen, K. S. Nano Lett. 2018, 18, 1460]. We also report on the realization of IXs with a luminescence line width reaching 4 meV at low temperatures. An enhancement of IX luminescence intensity and the narrow line width are observed in localized spots.},
doi = {10.1021/acs.nanolett.9b05086},
journal = {Nano Letters},
number = 3,
volume = 20,
place = {United States},
year = {Tue Feb 18 00:00:00 EST 2020},
month = {Tue Feb 18 00:00:00 EST 2020}
}

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