Molecular beam epitaxial growth and scanning tunneling microscopy studies of the gallium rich trench line structure on N-polar w-GaN( 000 1 ¯ )

Alhashem, Zakia H.; Mandru, Andrada-Oana; Pak, Jeongihm; Smith, Arthur R.

doi:10.1116/1.4927163

Title: Molecular beam epitaxial growth and scanning tunneling microscopy studies of the gallium rich trench line structure on N-polar w-GaN( $000 \bar{1}$ )

Journal Article · Fri Jul 24 00:00:00 UTC 2015 · Journal of Vacuum Science and Technology A

DOI: https://doi.org/10.1116/1.4927163 · OSTI ID:1737520

Alhashem, Zakia H. ^[1];

^[2]; Pak, Jeongihm ^[2];

^[2]

Ohio Univ., Athens, OH (United States). Nanoscale and Quantum Phenomena Inst.; Ohio University
Ohio Univ., Athens, OH (United States). Nanoscale and Quantum Phenomena Inst.

In addition to the usual set of the well-known reconstructions that have been observed on the N-polar GaN surface, namely 1×1, 3×3, 6×6, and c(6×12), an additional structure is occasionally seen at high Ga coverage, which can extend over a large area of the surface. This structure, which is referred to as trench line structure, is partially ordered and consists of parallel-running dark (trench) lines separating wide and narrow strips of atomically ordered regions. There are also randomly placed defects interrupting the ideal ordering. Reflection high energy electron diffraction and scanning tunneling microscopy in ultrahigh vacuum are applied to investigate this trench line structure on samples prepared using molecular beam epitaxy. It is found that the trench line structure results from annealing the Ga-rich c(6×12) at high temperature followed by quenching to room temperature. By careful comparison of the scanning tunneling microscopy images with those from neighboring c(6×12) regions, it is found that the trench line structure can be decomposed into subunits of the c(6×12). Using these subunits, some simple models for the trench line structure are created. It is proposed that the trench line structure is composed of two primary c(6×12) subunits consisting of first and second layer Ga adatoms and that the trench lines are regions devoid of Ga adatoms, going down to the Ga adlayer.

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Research Organization:: Ohio Univ., Athens, OH (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-06ER46317

OSTI ID:: 1737520

Report Number(s):: 8--0

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 6 Vol. 33; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Molecular beam epitaxial growth and scanning tunneling microscopy studies of the gallium rich trench line structure on N-polar w-GaN( 000 1 ¯ )

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References (29)

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Title: Molecular beam epitaxial growth and scanning tunneling microscopy studies of the gallium rich trench line structure on N-polar w-GaN( $000 \bar{1}$ )