Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions
Abstract
We differentiate the effect of strain induced by lattice-mismatched growth from strain induced by mechanical deformation on cubic nonradiative Auger recombination in narrow-gap GaInAsSb/GaSb quantum well (QW) heterostructures. The typical reduction in the Auger coefficient observed with lattice-mismatched growth appears to be due to the concomitant compositional change rather than the addition of strain, with implications for mid-IR semiconductor laser design. We induced a range of internal compressive strain in five samples from -0.90% to -2.07% by varying the composition during the growth and mechanically induced a similar range of internal strain in analogous quantum well membrane samples. We performed time-resolved photoluminescence and differential reflectivity measurements to extract the carrier recombination dynamics, taken at 300 K with carrier densities from cm-3 to cm-3. We observed no change with strain in the cubic Auger coefficient of samples that were strained mechanically, but we did observe a trend with strain in samples that were strained by the QW alloy composition. Measured Auger coefficients ranged from cm6 s-1 to cm6 s-1.
- Authors:
-
- Univ. of Colorado, Boulder, CO (United States)
- Univ. of Texas, Austin, TX (United States)
- National Inst. of Standards and Technology (NIST), Boulder, CO (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC). Basic Energy Sciences (BES); National Science Foundation (NSF); Center for Integrated Nanotechnologies (CINT); Defense Advanced Research Projects Agency (DARPA); US Air Force Office of Scientific Research (AFOSR)
- OSTI Identifier:
- 1726199
- Report Number(s):
- LA-UR-20-23245
Journal ID: ISSN 0003-6951
- Grant/Contract Number:
- 89233218CNA000001; DMR 1508783; 150860; 2018BC0091; W911NF-15-1-0621; FA9550-15-1-0506
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 26; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Recombination reactions; heterostructures; semiconductor lasers; atomic and molecular spectra; electronic transport; time-resolved photoluminescence; quantum wells
Citation Formats
Underwood, Kenneth J., Briggs, Andrew F., Sifferman, Scott D., Verma, Varun B., Sirica, Nicholas Steven, Prasankumar, Rohit Prativadi, Nam, Sae Woo, Silverman, Kevin L., Bank, Seth R., and Gopinath, Juliet T. Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions. United States: N. p., 2020.
Web. doi:10.1063/5.0007512.
Underwood, Kenneth J., Briggs, Andrew F., Sifferman, Scott D., Verma, Varun B., Sirica, Nicholas Steven, Prasankumar, Rohit Prativadi, Nam, Sae Woo, Silverman, Kevin L., Bank, Seth R., & Gopinath, Juliet T. Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions. United States. https://doi.org/10.1063/5.0007512
Underwood, Kenneth J., Briggs, Andrew F., Sifferman, Scott D., Verma, Varun B., Sirica, Nicholas Steven, Prasankumar, Rohit Prativadi, Nam, Sae Woo, Silverman, Kevin L., Bank, Seth R., and Gopinath, Juliet T. Mon .
"Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions". United States. https://doi.org/10.1063/5.0007512. https://www.osti.gov/servlets/purl/1726199.
@article{osti_1726199,
title = {Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions},
author = {Underwood, Kenneth J. and Briggs, Andrew F. and Sifferman, Scott D. and Verma, Varun B. and Sirica, Nicholas Steven and Prasankumar, Rohit Prativadi and Nam, Sae Woo and Silverman, Kevin L. and Bank, Seth R. and Gopinath, Juliet T.},
abstractNote = {We differentiate the effect of strain induced by lattice-mismatched growth from strain induced by mechanical deformation on cubic nonradiative Auger recombination in narrow-gap GaInAsSb/GaSb quantum well (QW) heterostructures. The typical reduction in the Auger coefficient observed with lattice-mismatched growth appears to be due to the concomitant compositional change rather than the addition of strain, with implications for mid-IR semiconductor laser design. We induced a range of internal compressive strain in five samples from -0.90% to -2.07% by varying the composition during the growth and mechanically induced a similar range of internal strain in analogous quantum well membrane samples. We performed time-resolved photoluminescence and differential reflectivity measurements to extract the carrier recombination dynamics, taken at 300 K with carrier densities from 2.7 × 10 18 cm-3 to 1.4 × 10 19 cm-3. We observed no change with strain in the cubic Auger coefficient of samples that were strained mechanically, but we did observe a trend with strain in samples that were strained by the QW alloy composition. Measured Auger coefficients ranged from 3.0 × 1 0 - 29 cm6 s-1 to 3.0 × 1 0 - 28 cm6 s-1.},
doi = {10.1063/5.0007512},
journal = {Applied Physics Letters},
number = 26,
volume = 116,
place = {United States},
year = {Mon Jun 29 00:00:00 EDT 2020},
month = {Mon Jun 29 00:00:00 EDT 2020}
}
Works referenced in this record:
Ultra-sensitive mid-infrared emission spectrometer with sub-ns temporal resolution
journal, January 2018
- Chen, Li; Schwarzer, Dirk; Lau, Jascha A.
- Optics Express, Vol. 26, Issue 12
Carrier recombination rates in narrow-gap -based superlattices
journal, February 1999
- Flatté, Michael E.; Grein, C. H.; Hasenberg, T. C.
- Physical Review B, Vol. 59, Issue 8
Auger recombination in InAs, GaSb, InP, and GaAs
journal, October 1972
- Takeshima, Masumi
- Journal of Applied Physics, Vol. 43, Issue 10
Application of antimonide lasers for gas sensing in the 3–4-µm range
journal, January 1999
- Werle, Peter; Popov, Andrei
- Applied Optics, Vol. 38, Issue 9
Room-temperature operation of 3.26μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers
journal, December 2005
- Grau, M.; Lin, C.; Dier, O.
- Applied Physics Letters, Vol. 87, Issue 24
Temperature and carrier density dependence of Auger recombination in a 3.4 µm InAs/GaSb/AlSb type-II laser device
journal, September 2002
- Drumm, J. O.; Vogelgesang, B.; Hoffmann, G.
- Semiconductor Science and Technology, Vol. 17, Issue 10
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
journal, December 2010
- Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen
- Applied Physics Letters, Vol. 97, Issue 25
Intensity- and Temperature-Dependent Carrier Recombination in Type-II Superlattices
journal, April 2015
- Olson, B. V.; Kadlec, E. A.; Kim, J. K.
- Physical Review Applied, Vol. 3, Issue 4
High-energy mid-IR laser for defense against heat-seeking missiles
journal, August 2014
- Lippert, Espen; Haakestad, Magnus W.; Fonnum, Helge
- SPIE Newsroom
Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources
journal, August 1984
- Olshansky, R.; Su, C.; Manning, J.
- IEEE Journal of Quantum Electronics, Vol. 20, Issue 8
Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
journal, August 2012
- Debusmann, R.; Brauch, U.; Hoffmann, V.
- Journal of Applied Physics, Vol. 112, Issue 3
On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers
journal, September 2005
- Bank, S. R.; Goddard, L. L.; Wistey, M. A.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 11, Issue 5
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
journal, August 2012
- Olson, B. V.; Shaner, E. A.; Kim, J. K.
- Applied Physics Letters, Vol. 101, Issue 9
Mid–infrared laser applications in medicine and biology
journal, March 2001
- Waynant, Ronald W.; Ilev, Ilko K.; Gannot, Israel
- Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, Vol. 359, Issue 1780
nextnano: General Purpose 3-D Simulations
journal, September 2007
- Birner, S.; Zibold, T.; Andlauer, T.
- IEEE Transactions on Electron Devices, Vol. 54, Issue 9
Comparison of band-to-band Auger processes in InGaAsP
journal, June 1983
- Sugimura, A.
- IEEE Journal of Quantum Electronics, Vol. 19, Issue 6
Midinfrared picosecond spectroscopy studies of Auger recombination in InSb
journal, July 1995
- Chazapis, V.; Blom, H. A.; Vodopyanov, K. L.
- Physical Review B, Vol. 52, Issue 4
Reduction of lasing threshold current density by the lowering of valence band effective mass
journal, January 1986
- Yablonovitch, E.; Kane, E.
- Journal of Lightwave Technology, Vol. 4, Issue 5
Carrier density dependence of Auger recombination
journal, November 1978
- Haug, Albert
- Solid-State Electronics, Vol. 21, Issue 11-12
10 Gbps DPSK transmission over free-space link in the mid-infrared
journal, January 2018
- Su, Yulong; Wang, Wei; Hu, Xiaohong
- Optics Express, Vol. 26, Issue 26
Continuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm
journal, May 2008
- Lehnhardt, T.; Hümmer, M.; Rößner, K.
- Applied Physics Letters, Vol. 92, Issue 18
Type-I Diode Lasers for Spectral Region Above 3 μm
journal, September 2011
- Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, Issue 5
Cascade type-I quantum well diode lasers emitting 960 mW near 3 μ m
journal, October 2014
- Shterengas, Leon; Liang, Rui; Kipshidze, Gela
- Applied Physics Letters, Vol. 105, Issue 16
Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers
journal, January 2007
- O'Brien, K.; Sweeney, S. J.; Adams, A. R.
- physica status solidi (b), Vol. 244, Issue 1
Towards Integrated Mid-Infrared Gas Sensors
journal, May 2019
- Popa, Daniel; Udrea, Florin
- Sensors, Vol. 19, Issue 9
Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb
journal, November 2015
- Sifferman, Scott D.; Nair, Hari P.; Salas, Rodolfo
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 21, Issue 6
Band-structure engineering for low-threshold high-efficiency semiconductor lasers
journal, January 1986
- Adams, A. R.
- Electronics Letters, Vol. 22, Issue 5