Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides
Abstract
The role of additives in facilitating the growth of conventional semiconducting thin films is well-estabThe role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. In conclusion, the surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.lished. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers viamore »
- Authors:
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[1];
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[6];
[3];
[3];
[5];
[7];
[8];
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- Honda Research Institute USA Inc., San Jose, CA (United States)
- Honda Research Institute USA Inc., San Jose, CA (United States); Pennsylvania State University, University Park, PA (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Rice Univ., Houston, TX (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Stanford Univ., CA (United States)
- National Synchrotron Radiation Research Center (NSRRC), Hsinchu (Taiwan)
- Pennsylvania State University, University Park, PA (United States)
- Harvard Univ., Cambridge, MA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation Graduate Research Fellowship
- OSTI Identifier:
- 1647238
- Alternate Identifier(s):
- OSTI ID: 1657899
- Grant/Contract Number:
- AC02-76SF00515; W911NF-14-0247; DGE1656518; DMR- 1231319; AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 14; Journal Issue: 6; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; surfactant; MoS2; edge passivation; strain; lithography-free patterning
Citation Formats
Li, Xufan, Kahn, Ethan, Chen, Gugang, Sang, Xiahan, Lei, Jincheng, Passarello, Donata, Oyedele, Akinola D., Zakhidov, Dante, Chen, Kai-Wen, Chen, Yu-Xun, Hsieh, Shang-Hsien, Fujisawa, Kazunori, Unocic, Raymond R., Xiao, Kai, Salleo, Alberto, Toney, Michael F., Chen, Chia-Hao, Kaxiras, Efthimios, Terrones, Mauricio, Yakobson, Boris I., and Harutyunyan, Avetik R. Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides. United States: N. p., 2020.
Web. doi:10.1021/acsnano.0c00132.
Li, Xufan, Kahn, Ethan, Chen, Gugang, Sang, Xiahan, Lei, Jincheng, Passarello, Donata, Oyedele, Akinola D., Zakhidov, Dante, Chen, Kai-Wen, Chen, Yu-Xun, Hsieh, Shang-Hsien, Fujisawa, Kazunori, Unocic, Raymond R., Xiao, Kai, Salleo, Alberto, Toney, Michael F., Chen, Chia-Hao, Kaxiras, Efthimios, Terrones, Mauricio, Yakobson, Boris I., & Harutyunyan, Avetik R. Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides. United States. https://doi.org/10.1021/acsnano.0c00132
Li, Xufan, Kahn, Ethan, Chen, Gugang, Sang, Xiahan, Lei, Jincheng, Passarello, Donata, Oyedele, Akinola D., Zakhidov, Dante, Chen, Kai-Wen, Chen, Yu-Xun, Hsieh, Shang-Hsien, Fujisawa, Kazunori, Unocic, Raymond R., Xiao, Kai, Salleo, Alberto, Toney, Michael F., Chen, Chia-Hao, Kaxiras, Efthimios, Terrones, Mauricio, Yakobson, Boris I., and Harutyunyan, Avetik R. Mon .
"Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides". United States. https://doi.org/10.1021/acsnano.0c00132. https://www.osti.gov/servlets/purl/1647238.
@article{osti_1647238,
title = {Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides},
author = {Li, Xufan and Kahn, Ethan and Chen, Gugang and Sang, Xiahan and Lei, Jincheng and Passarello, Donata and Oyedele, Akinola D. and Zakhidov, Dante and Chen, Kai-Wen and Chen, Yu-Xun and Hsieh, Shang-Hsien and Fujisawa, Kazunori and Unocic, Raymond R. and Xiao, Kai and Salleo, Alberto and Toney, Michael F. and Chen, Chia-Hao and Kaxiras, Efthimios and Terrones, Mauricio and Yakobson, Boris I. and Harutyunyan, Avetik R.},
abstractNote = {The role of additives in facilitating the growth of conventional semiconducting thin films is well-estabThe role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. In conclusion, the surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.lished. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.},
doi = {10.1021/acsnano.0c00132},
journal = {ACS Nano},
number = 6,
volume = 14,
place = {United States},
year = {Mon Apr 27 00:00:00 EDT 2020},
month = {Mon Apr 27 00:00:00 EDT 2020}
}
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