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Title: How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain

Abstract

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can bemore » explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. Finally, the important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.« less

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3]; ORCiD logo [1];  [1]; ORCiD logo [1];  [4];  [5];  [6]; ORCiD logo [7]; ORCiD logo [8];  [1]; ORCiD logo [1];  [1];  [9];  [1]
+ Show Author Affiliations
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Technical Univ. of Munich, Garching (Germany)
  4. Wuhan Univ. (China)
  5. Radboud Univ. of Nijmegen (Netherlands)
  6. ICMM-CSIC, Madrid (Spain)
  7. Montana State Univ., Bozeman, MN (United States)
  8. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  9. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States); Kavli Energy NanoScience Institute, Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key R&D Program
OSTI Identifier:
1631608
Grant/Contract Number:  
AC02-05CH11231; 2018FYA0305800
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 13; Journal Issue: 9; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; point defects; 2D materials; transition metal dichalcogenide; WS2; noncontact atomic force microscopy (nc-AFM); density function theory (DFT); tight binding

Citation Formats

Schuler, Bruno, Lee, Jun-Ho, Kastl, Christoph, Cochrane, Katherine A., Chen, Christopher T., Refaely-Abramson, Sivan, Yuan, Shengjun, van Veen, Edo, Roldán, Rafael, Borys, Nicholas J., Koch, Roland J., Aloni, Shaul, Schwartzberg, Adam M., Ogletree, D. Frank, Neaton, Jeffrey B., and Weber-Bargioni, Alexander. How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain. United States: N. p., 2019. Web. doi:10.1021/acsnano.9b04611.
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Schuler, Bruno, Lee, Jun-Ho, Kastl, Christoph, Cochrane, Katherine A., Chen, Christopher T., Refaely-Abramson, Sivan, Yuan, Shengjun, van Veen, Edo, Roldán, Rafael, Borys, Nicholas J., Koch, Roland J., Aloni, Shaul, Schwartzberg, Adam M., Ogletree, D. Frank, Neaton, Jeffrey B., & Weber-Bargioni, Alexander. How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain. United States. https://doi.org/10.1021/acsnano.9b04611
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Schuler, Bruno, Lee, Jun-Ho, Kastl, Christoph, Cochrane, Katherine A., Chen, Christopher T., Refaely-Abramson, Sivan, Yuan, Shengjun, van Veen, Edo, Roldán, Rafael, Borys, Nicholas J., Koch, Roland J., Aloni, Shaul, Schwartzberg, Adam M., Ogletree, D. Frank, Neaton, Jeffrey B., and Weber-Bargioni, Alexander. Thu . "How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain". United States. https://doi.org/10.1021/acsnano.9b04611. https://www.osti.gov/servlets/purl/1631608.
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@article{osti_1631608,
title = {How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain},
author = {Schuler, Bruno and Lee, Jun-Ho and Kastl, Christoph and Cochrane, Katherine A. and Chen, Christopher T. and Refaely-Abramson, Sivan and Yuan, Shengjun and van Veen, Edo and Roldán, Rafael and Borys, Nicholas J. and Koch, Roland J. and Aloni, Shaul and Schwartzberg, Adam M. and Ogletree, D. Frank and Neaton, Jeffrey B. and Weber-Bargioni, Alexander},
abstractNote = {Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. Finally, the important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.},
doi = {10.1021/acsnano.9b04611},
journal = {ACS Nano},
number = 9,
volume = 13,
place = {United States},
year = {Thu Aug 08 00:00:00 EDT 2019},
month = {Thu Aug 08 00:00:00 EDT 2019}
}
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https://doi.org/10.1021/acsnano.9b04611
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Figures / Tables:

Figure 1 Figure 1: Monolayer WS2/Gr/SiC sample. a Pseudo 3D STM topography of a WS2 island on Gr/SiC. b,c STM images (I = 20 pA,V = 1.1 V) of single defects on WS2. One of each defect type is labelled.
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Works referenced in this record:

Defect engineering of two-dimensional transition metal dichalcogenides
journal, April 2016

2D materials and van der Waals heterostructures
journal, July 2016

2D transition metal dichalcogenides
journal, June 2017

  • Manzeli, Sajedeh; Ovchinnikov, Dmitry; Pasquier, Diego
  • Nature Reviews Materials, Vol. 2, Issue 8
  • DOI: 10.1038/natrevmats.2017.33

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
journal, March 2016

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
journal, July 2015

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS 2 , Mo S e 2 , WS 2 , and WS e 2
journal, November 2014

Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014

  • Xu, Xiaodong; Yao, Wang; Xiao, Di
  • Nature Physics, Vol. 10, Issue 5
  • DOI: 10.1038/nphys2942

Valleytronics in 2D materials
journal, August 2016

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
journal, October 2011

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
journal, August 2014

  • Ugeda, Miguel M.; Bradley, Aaron J.; Shi, Su-Fei
  • Nature Materials, Vol. 13, Issue 12
  • DOI: 10.1038/nmat4061

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS 2
journal, August 2017

Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States
journal, November 2013

Solid-state single-photon emitters
journal, September 2016

Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon Emission
journal, December 2018

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
journal, May 2013

  • Zhou, Wu; Zou, Xiaolong; Najmaei, Sina
  • Nano Letters, Vol. 13, Issue 6, p. 2615-2622
  • DOI: 10.1021/nl4007479

Charge density wave order in 1D mirror twin boundaries of single-layer MoSe2
journal, April 2016

  • Barja, Sara; Wickenburg, Sebastian; Liu, Zhen-Fei
  • Nature Physics, Vol. 12, Issue 8
  • DOI: 10.1038/nphys3730

Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides
journal, January 2018

  • Wang, Shanshan; Robertson, Alex; Warner, Jamie H.
  • Chemical Society Reviews, Vol. 47, Issue 17
  • DOI: 10.1039/C8CS00236C

Three-fold rotational defects in two-dimensional transition metal dichalcogenides
journal, April 2015

  • Lin, Yung-Chang; Björkman, Torbjörn; Komsa, Hannu-Pekka
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7736

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
journal, July 2012

Robust valley polarization of helium ion modified atomically thin MoS 2
journal, November 2017

Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer WS 2
journal, August 2019

Doping Nature of Native Defects in 1 T − TiSe 2
journal, May 2014

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors
journal, September 2016

  • Gao, Jian; Kim, Young Duck; Liang, Liangbo
  • Advanced Materials, Vol. 28, Issue 44
  • DOI: 10.1002/adma.201601104

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides
journal, July 2019

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
journal, May 2013

  • van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A.
  • Nature Materials, Vol. 12, Issue 6, p. 554-561
  • DOI: 10.1038/nmat3633

Joined edges in MoS 2 : metallic and half-metallic wires
journal, July 2013

Effect of point defects on the optical and transport properties of MoS 2 and WS 2
journal, July 2014

Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe 2
journal, February 2015

Native defects in bulk and monolayer MoS 2 from first principles
journal, March 2015

Strong spin-orbit splitting and magnetism of point defect states in monolayer WS 2
journal, November 2016

Electronic and optical properties of vacancy defects in single-layer transition metal dichalcogenides
journal, June 2017

Substrate screening effects on the quasiparticle band gap and defect charge transition levels in MoS 2
journal, August 2018

Hopping transport through defect-induced localized states in molybdenum disulphide
journal, October 2013

  • Qiu, Hao; Xu, Tao; Wang, Zilu
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3642

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
journal, September 2013

  • Tongay, Sefaattin; Suh, Joonki; Ataca, Can
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02657

Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides
journal, January 2015

  • Chow, Philippe K.; Jacobs-Gedrim, Robin B.; Gao, Jian
  • ACS Nano, Vol. 9, Issue 2
  • DOI: 10.1021/nn5073495

Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide
journal, April 2017

  • Carozo, Victor; Wang, Yuanxi; Fujisawa, Kazunori
  • Science Advances, Vol. 3, Issue 4
  • DOI: 10.1126/sciadv.1602813

Evidence for two distinct defect related luminescence features in monolayer MoS 2
journal, September 2016

  • Saigal, Nihit; Ghosh, Sandip
  • Applied Physics Letters, Vol. 109, Issue 12
  • DOI: 10.1063/1.4963133

Single quantum emitters in monolayer semiconductors
journal, May 2015

  • He, Yu-Ming; Clark, Genevieve; Schaibley, John R.
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.75

Voltage-controlled quantum light from an atomically thin semiconductor
journal, May 2015

  • Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M.
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.79

Single photon emitters in exfoliated WSe2 structures
journal, May 2015

  • Koperski, M.; Nogajewski, K.; Arora, A.
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.67

Optically active quantum dots in monolayer WSe2
journal, May 2015

  • Srivastava, Ajit; Sidler, Meinrad; Allain, Adrien V.
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.60

All The Catalytic Active Sites of MoS 2 for Hydrogen Evolution
journal, December 2016

  • Li, Guoqing; Zhang, Du; Qiao, Qiao
  • Journal of the American Chemical Society, Vol. 138, Issue 51
  • DOI: 10.1021/jacs.6b05940

Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies
journal, November 2015

  • Li, Hong; Tsai, Charlie; Koh, Ai Leen
  • Nature Materials, Vol. 15, Issue 1
  • DOI: 10.1038/nmat4465

CVD synthesis of Mo (1−x) W x S 2 and MoS 2(1−x) Se 2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide
journal, January 2015

  • Zhang, Wenting; Li, Xiaodong; Jiang, Tongtong
  • Nanoscale, Vol. 7, Issue 32
  • DOI: 10.1039/C5NR02515J

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport
journal, June 2014

  • Zhang, Mei; Wu, Juanxia; Zhu, Yiming
  • ACS Nano, Vol. 8, Issue 7
  • DOI: 10.1021/nn5020566

Two-dimensional semiconductor alloys: Monolayer Mo 1−x W x Se 2
journal, January 2014

  • Tongay, Sefaattin; Narang, Deepa S.; Kang, Jun
  • Applied Physics Letters, Vol. 104, Issue 1
  • DOI: 10.1063/1.4834358

Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
journal, January 2018

Exploring atomic defects in molybdenum disulphide monolayers
journal, February 2015

  • Hong, Jinhua; Hu, Zhixin; Probert, Matt
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7293

Point Defects and Grain Boundaries in Rotationally Commensurate MoS 2 on Epitaxial Graphene
journal, March 2016

  • Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia
  • The Journal of Physical Chemistry C, Vol. 120, Issue 37
  • DOI: 10.1021/acs.jpcc.6b02073

Defect Structure of Localized Excitons in a WSe 2 Monolayer
journal, July 2017

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors
journal, January 2018

Growth and Optical Properties of High-Quality Monolayer WS 2 on Graphite
journal, February 2015

Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide
journal, January 2017

  • Forti, Stiven; Rossi, Antonio; Büch, Holger
  • Nanoscale, Vol. 9, Issue 42
  • DOI: 10.1039/C7NR05495E

Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy
journal, July 2018

The important role of water in growth of monolayer transition metal dichalcogenides
journal, March 2017

Nanoscale mapping of quasiparticle band alignment
journal, July 2019

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
journal, December 2009

The Chemical Structure of a Molecule Resolved by Atomic Force Microscopy
journal, August 2009

Different tips for high-resolution atomic force microscopy and scanning tunneling microscopy of single molecules
journal, February 2013

  • Mohn, Fabian; Schuler, Bruno; Gross, Leo
  • Applied Physics Letters, Vol. 102, Issue 7
  • DOI: 10.1063/1.4793200

Understanding atomic-resolved STM images on TiO 2 (110)-(1 × 1) surface by DFT calculations
journal, September 2010

Pulsed laser deposition of single-layer MoS 2 on Au(111): from nanosized crystals to large-area films
journal, January 2019

  • Tumino, Francesco; Casari, Carlo S.; Passoni, Matteo
  • Nanoscale Advances, Vol. 1, Issue 2
  • DOI: 10.1039/C8NA00126J

The mechanisms underlying the enhanced resolution of atomic force microscopy with functionalized tips
journal, December 2010

Mechanism of high-resolution STM/AFM imaging with functionalized tips
journal, August 2014

Origin of High-Resolution IETS-STM Images of Organic Molecules with Functionalized Tips
journal, November 2014

Atomic Structure and Spectroscopy of Single Metal (Cr, V) Substitutional Dopants in Monolayer MoS 2
journal, November 2016

Which Transition Metal Atoms Can Be Embedded into Two-Dimensional Molybdenum Dichalcogenides and Add Magnetism?
journal, June 2019

Band-bending induced by charged defects and edges of atomically thin transition metal dichalcogenide films
journal, June 2018

Surface Defects on Natural MoS 2
journal, May 2015

  • Addou, Rafik; Colombo, Luigi; Wallace, Robert M.
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 22
  • DOI: 10.1021/acsami.5b01778

Imaging the charge distribution within a single molecule
journal, February 2012

  • Mohn, Fabian; Gross, Leo; Moll, Nikolaj
  • Nature Nanotechnology, Vol. 7, Issue 4
  • DOI: 10.1038/nnano.2012.20

Measuring the Charge State of an Adatom with Noncontact Atomic Force Microscopy
journal, June 2009

Tuning electronic properties of transition-metal dichalcogenides via defect charge
journal, September 2018

Many-body transitions in a single molecule visualized by scanning tunnelling microscopy
journal, January 2015

  • Schulz, Fabian; Ijäs, Mari; Drost, Robert
  • Nature Physics, Vol. 11, Issue 3
  • DOI: 10.1038/nphys3212

Nitrogen acceptor in 2H-polytype synthetic MoS 2 assessed by multifrequency electron spin resonance
journal, September 2018

  • Schoenaers, Ben; Stesmans, Andre; Afanas’ev, Valery V.
  • Journal of Vacuum Science & Technology A, Vol. 36, Issue 5
  • DOI: 10.1116/1.5034447

Covalent Nitrogen Doping and Compressive Strain in MoS 2 by Remote N 2 Plasma Exposure
journal, August 2016

Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS 2 Field-Effect Transistors by Atomic Nitrogen Treatment
journal, February 2018

Carbon doping of WS 2 monolayers: Bandgap reduction and p-type doping transport
journal, May 2019

Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012

Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor
journal, December 2018

  • van der Heijden, Joost; Kobayashi, Takashi; House, Matthew G.
  • Science Advances, Vol. 4, Issue 12
  • DOI: 10.1126/sciadv.aat9199

Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation
journal, June 2019

Atomap: a new software tool for the automated analysis of atomic resolution images using two-dimensional Gaussian fitting
journal, February 2017

  • Nord, Magnus; Vullum, Per Erik; MacLaren, Ian
  • Advanced Structural and Chemical Imaging, Vol. 3, Issue 1
  • DOI: 10.1186/s40679-017-0042-5

Bond-Order Discrimination by Atomic Force Microscopy
journal, September 2012

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides
journal, May 2012

Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide
journal, August 2015

  • Bao, Wei; Borys, Nicholas J.; Ko, Changhyun
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8993

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
journal, February 2009

  • Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten
  • Nature Materials, Vol. 8, Issue 3
  • DOI: 10.1038/nmat2382

High-speed force sensor for force microscopy and profilometry utilizing a quartz tuning fork
journal, December 1998

  • Giessibl, Franz J.
  • Applied Physics Letters, Vol. 73, Issue 26
  • DOI: 10.1063/1.122948

Frequency modulation detection using high‐ Q cantilevers for enhanced force microscope sensitivity
journal, January 1991

  • Albrecht, T. R.; Grütter, P.; Horne, D.
  • Journal of Applied Physics, Vol. 69, Issue 2
  • DOI: 10.1063/1.347347

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Advanced capabilities for materials modelling with Quantum ESPRESSO
journal, October 2017

  • Giannozzi, P.; Andreussi, O.; Brumme, T.
  • Journal of Physics: Condensed Matter, Vol. 29, Issue 46
  • DOI: 10.1088/1361-648X/aa8f79

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Optimized norm-conserving Vanderbilt pseudopotentials
journal, August 2013

Crystal structures of tungsten disulfide and diselenide
journal, October 1987

Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS 2
journal, August 2013

Modeling electronic structure and transport properties of graphene with resonant scattering centers
journal, September 2010

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
dataset, January 2016

  • Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia
  • Materials Data Facility
  • DOI: 10.18126/m29g64

Effect of capsaicin-sensitive sensory neurons on bone architecture and mechanical properties in the rat hindlimb suspension model
journal, July 2017

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
journal, February 2009

  • Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten
  • Nature Materials, Vol. 8, Issue 3
  • DOI: 10.1038/nmat2382

High-speed force sensor for force microscopy and profilometry utilizing a quartz tuning fork
journal, December 1998

  • Giessibl, Franz J.
  • Applied Physics Letters, Vol. 73, Issue 26
  • DOI: 10.1063/1.122948

Evidence for two distinct defect related luminescence features in monolayer MoS 2
journal, September 2016

  • Saigal, Nihit; Ghosh, Sandip
  • Applied Physics Letters, Vol. 109, Issue 12
  • DOI: 10.1063/1.4963133

Apparent Reversal of Molecular Orbitals Reveals Entanglement
journal, August 2017

Nitrogen acceptor in 2H-polytype synthetic MoS 2 assessed by multifrequency electron spin resonance
journal, September 2018

  • Schoenaers, Ben; Stesmans, Andre; Afanas’ev, Valery V.
  • Journal of Vacuum Science & Technology A, Vol. 36, Issue 5
  • DOI: 10.1116/1.5034447
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    Collective excitations in 2D atomic layers: Recent perspectives
    journal, January 2020

    • Cho, Yujin; Huang, Jiahui; Wong, Chee Wei
    • Applied Physics Letters, Vol. 116, Issue 2
    • DOI: 10.1063/1.5135301
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