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Title: Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

Abstract

Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). In this work, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to theδ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. Furthermore, the carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1644064
Report Number(s):
SAND-2020-3125J
Journal ID: ISSN 0884-2914; 684747
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 35; Journal Issue: 16; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Surface chemistry; 2D material; optical properties

Citation Formats

Katzenmeyer, Aaron M., Luk, Ting S., Bussmann, Ezra, Young, Steve, Anderson, Evan M., Marshall, Michael T., Ohlhausen, James A., Kotula, Paul, Lu, Ping, Campbell, DeAnna M., Lu, Tzu-Ming, Liu, Peter Q., Ward, Daniel R., and Misra, Shashank. Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry. United States: N. p., 2020. Web. doi:10.1557/jmr.2020.155.
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Katzenmeyer, Aaron M., Luk, Ting S., Bussmann, Ezra, Young, Steve, Anderson, Evan M., Marshall, Michael T., Ohlhausen, James A., Kotula, Paul, Lu, Ping, Campbell, DeAnna M., Lu, Tzu-Ming, Liu, Peter Q., Ward, Daniel R., & Misra, Shashank. Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry. United States. https://doi.org/10.1557/jmr.2020.155
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Katzenmeyer, Aaron M., Luk, Ting S., Bussmann, Ezra, Young, Steve, Anderson, Evan M., Marshall, Michael T., Ohlhausen, James A., Kotula, Paul, Lu, Ping, Campbell, DeAnna M., Lu, Tzu-Ming, Liu, Peter Q., Ward, Daniel R., and Misra, Shashank. Tue . "Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry". United States. https://doi.org/10.1557/jmr.2020.155. https://www.osti.gov/servlets/purl/1644064.
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@article{osti_1644064,
title = {Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry},
author = {Katzenmeyer, Aaron M. and Luk, Ting S. and Bussmann, Ezra and Young, Steve and Anderson, Evan M. and Marshall, Michael T. and Ohlhausen, James A. and Kotula, Paul and Lu, Ping and Campbell, DeAnna M. and Lu, Tzu-Ming and Liu, Peter Q. and Ward, Daniel R. and Misra, Shashank},
abstractNote = {Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). In this work, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to theδ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. Furthermore, the carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.},
doi = {10.1557/jmr.2020.155},
journal = {Journal of Materials Research},
number = 16,
volume = 35,
place = {United States},
year = {Tue Jun 23 00:00:00 EDT 2020},
month = {Tue Jun 23 00:00:00 EDT 2020}
}
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Works referenced in this record:

High resolution thickness measurements of ultrathin Si:P monolayers using weak localization
journal, January 2018

  • Hagmann, Joseph A.; Wang, Xiqiao; Namboodiri, Pradeep
  • Applied Physics Letters, Vol. 112, Issue 4
  • DOI: 10.1063/1.4998712

Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures
journal, November 2017

Amorphous gallium-a free electron metal
journal, November 1974

An integrated diamond nanophotonics platform for quantum-optical networks
journal, October 2016

Exploring the Limits of N-Type Ultra-Shallow Junction Formation
journal, May 2013

  • Polley, Craig M.; Clarke, Warrick R.; Miwa, Jill A.
  • ACS Nano, Vol. 7, Issue 6
  • DOI: 10.1021/nn4016407

Delta doping in silicon
journal, January 1993

  • Gossmann, H. -J.; Schubert, E. F.
  • Critical Reviews in Solid State and Materials Sciences, Vol. 18, Issue 1
  • DOI: 10.1080/10408439308243415

Infrared plasmons on heavily-doped silicon
journal, August 2011

  • Ginn, James C.; Jarecki, Robert L.; Shaner, Eric A.
  • Journal of Applied Physics, Vol. 110, Issue 4
  • DOI: 10.1063/1.3626050

All-optical lithography process for contacting nanometer precision donor devices
journal, November 2017

  • Ward, D. R.; Marshall, M. T.; Campbell, D. M.
  • Applied Physics Letters, Vol. 111, Issue 19
  • DOI: 10.1063/1.4998639

Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
journal, November 1979

Infrared surface plasmons on heavily doped silicon
journal, December 2011

  • Shahzad, Monas; Medhi, Gautam; Peale, Robert E.
  • Journal of Applied Physics, Vol. 110, Issue 12
  • DOI: 10.1063/1.3672738

Determining thickness and refractive index from free-standing ultra-thin polymer films with spectroscopic ellipsometry
journal, November 2017

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide
journal, March 2019

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
conference, March 2020

  • Katzenmeyer, Aaron; Dmitrovic, Sanja; Baczewski, Andrew
  • Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020
  • DOI: 10.1117/12.2551455

Infrared spectroscopic ellipsometry applied to the characterization of nano-structures of silicon IC manufacturing
journal, February 2004

IR permittivities for silicides and doped silicon
journal, January 2010

  • Cleary, J. W.; Peale, R. E.; Shelton, D. J.
  • Journal of the Optical Society of America B, Vol. 27, Issue 4
  • DOI: 10.1364/JOSAB.27.000730

Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal
journal, October 2008

  • Goh, K. E. J.; Augarten, Y.; Oberbeck, L.
  • Applied Physics Letters, Vol. 93, Issue 14
  • DOI: 10.1063/1.2996582

Scanning capacitance microscopy registration of buried atomic-precision donor devices
journal, February 2015

Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy
journal, June 2014

  • Oberbeck, Lars; Reusch, Thilo C. G.; Hallam, Toby
  • Applied Physics Letters, Vol. 104, Issue 25
  • DOI: 10.1063/1.4884654

Electronic transport in two-dimensional Si:P δ -doped layers
journal, March 2013

Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles
journal, February 1998

Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry
journal, December 2010

  • Nelson, F. J.; Kamineni, V. K.; Zhang, T.
  • Applied Physics Letters, Vol. 97, Issue 25
  • DOI: 10.1063/1.3525940

Flat Optical and Plasmonic Devices Using Area-Selective Ion-Beam Doping of Silicon
journal, January 2018

  • Salman, Jad; Hafermann, Martin; Rensberg, Jura
  • Advanced Optical Materials, Vol. 6, Issue 5
  • DOI: 10.1002/adom.201701027

Growth and characterization of a delta‐function doping layer in Si
journal, April 1987

  • Zeindl, H. P.; Wegehaupt, T.; Eisele, I.
  • Applied Physics Letters, Vol. 50, Issue 17
  • DOI: 10.1063/1.97950

Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas
journal, March 2013

Overview of variable-angle spectroscopic ellipsometry (VASE): I. Basic theory and typical applications
conference, June 2017

  • Woollam, John A.; Johs, Blaine D.; Herzinger, Craig M.
  • Critical Review Collection, SPIE Proceedings
  • DOI: 10.1117/12.351660

CMOS platform for atomic-scale device fabrication
journal, August 2018

Nondestructive imaging of atomically thin nanostructures buried in silicon
journal, June 2017

  • Gramse, Georg; Kölker, Alexander; Lim, Tingbin
  • Science Advances, Vol. 3, Issue 6
  • DOI: 10.1126/sciadv.1602586

Silicon quantum electronics
journal, July 2013

  • Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea
  • Reviews of Modern Physics, Vol. 85, Issue 3
  • DOI: 10.1103/RevModPhys.85.961

Fundamentals and applications of variable angle spectroscopic ellipsometry
journal, January 1990

Two- to three-dimensional crossover in a dense electron liquid in silicon
journal, April 2018

Vapor-Phase Deposition of Monofunctional Alkoxysilanes for Sub-Nanometer-Level Biointerfacing on Silicon Oxide Surfaces
journal, January 2010

  • Dorvel, Brian; Reddy, Bobby; Block, Ian
  • Advanced Functional Materials, Vol. 20, Issue 1
  • DOI: 10.1002/adfm.200901688
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