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Title: Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Abstract

We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. In conclusion, the energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electroluminescence spectra of InGaN/GaN quantum well structures.

Authors:
 [1];  [2];  [2];  [3];  [3];  [3];  [4];  [2];  [5];  [2];  [2];  [2];  [2];  [2]
+ Show Author Affiliations
  1. Université Paris Saclay, Palaiseau Cedex (France); Technische Universität Dortmund (Germany)
  2. Université Paris Saclay, Palaiseau Cedex (France)
  3. Univ. of California, Santa Barbara, CA (United States)
  4. Université Paris Saclay, Palaiseau Cedex (France) ; Univ. of California, Santa Barbara, CA (United States)
  5. National Taiwan University, Taipei (Taiwan)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Contributing Org.:
Ecole Polytechnique Paris National Taiwan University
OSTI Identifier:
1635231
Alternate Identifier(s):
OSTI ID: 1461006
Grant/Contract Number:  
EE0007096
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Anderson localization; semiconductors; disordered alloys; scanning probe microscopy

Citation Formats

Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. -R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., and Peretti, Jacques. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.98.045305.
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Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. -R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., & Peretti, Jacques. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy. United States. https://doi.org/10.1103/PhysRevB.98.045305
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Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. -R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., and Peretti, Jacques. Thu . "Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy". United States. https://doi.org/10.1103/PhysRevB.98.045305. https://www.osti.gov/servlets/purl/1635231.
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@article{osti_1635231,
title = {Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy},
author = {Hahn, W. and Lentali, J. -M. and Polovodov, P. and Young, N. and Nakamura, S. and Speck, J. S. and Weisbuch, C. and Filoche, M. and Wu, Y. -R. and Piccardo, M. and Maroun, F. and Martinelli, L. and Lassailly, Y. and Peretti, Jacques},
abstractNote = {We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. In conclusion, the energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electroluminescence spectra of InGaN/GaN quantum well structures.},
doi = {10.1103/PhysRevB.98.045305},
journal = {Physical Review B},
number = 4,
volume = 98,
place = {United States},
year = {Thu Jul 19 00:00:00 EDT 2018},
month = {Thu Jul 19 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.98.045305
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Cited by: 26 works
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Figures / Tables:

FIG. 1 FIG. 1: Photoluminescence spectra of InGaN/GaN QW samples at 300 K for a 394 nm excitation wavelength. Inset: sample structure; the thickness d of the p-GaN layer, below the p+-GaN cap, is 10 nm (resp. 90 nm) in S10 (resp. S90).
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    Works referencing / citing this record:

    Kinetic Monte Carlo simulations of the dynamics of a coupled system of free and localized carriers in AlGaN
    journal, January 2020

    • Kravcov, O.; Mickevičius, J.; Tamulaitis, G.
    • Journal of Physics: Condensed Matter, Vol. 32, Issue 14
    • DOI: 10.1088/1361-648x/ab61cb
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      Figures / Tables found in this record:

      FIG. 1 (p. 2)figure
      FIG. 2 (p. 2)figure
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      FIG. 4 (p. 4)figure
      FIG. 5 (p. 4)figure
      FIG. 1 (p. 6)figure
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