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Title: Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Abstract

Not provided.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1540922
DOE Contract Number:  
EE0007096
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. -R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., and Peretti, J. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy. United States: N. p., 2018. Web. doi:10.1103/physrevb.98.045305.
Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. -R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., & Peretti, J. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy. United States. doi:10.1103/physrevb.98.045305.
Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. -R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., and Peretti, J. Sun . "Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy". United States. doi:10.1103/physrevb.98.045305.
@article{osti_1540922,
title = {Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy},
author = {Hahn, W. and Lentali, J. -M. and Polovodov, P. and Young, N. and Nakamura, S. and Speck, J. S. and Weisbuch, C. and Filoche, M. and Wu, Y. -R. and Piccardo, M. and Maroun, F. and Martinelli, L. and Lassailly, Y. and Peretti, J.},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.98.045305},
journal = {Physical Review B},
issn = {2469-9950},
number = 4,
volume = 98,
place = {United States},
year = {2018},
month = {7}
}

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