(Invited) Measurement of the Energy-Band Relations of Stabilized Si Photoanodes Using Operando Ambient Pressure X-ray Photoelectron Spectroscopy

Richter, M. H.; Lichterman, M. F.; Hu, S.; Crumlin, E. J.; Mayer, T.; Axnanda, S.; Favaro, M.; Drisdell, W.; Hussain, Z.; Brunschwig, B.; Lewis, Nathan S.; Liu, Z.; Lewerenz, H. J.

doi:10.1149/06606.0105ecst

Title: (Invited) Measurement of the Energy-Band Relations of Stabilized Si Photoanodes Using Operando Ambient Pressure X-ray Photoelectron Spectroscopy

Abstract

The energy-band relations and electronic properties for the light absorber/protection-layer stack of TiO₂-stabilized Si photoanodes have been confirmed by ambient pressure x-ray synchrotron radiation photoelectron spectroscopy under an applied potential (operando), from single core-level emission lines. The experiments have further been complemented with laboratory-based monochromatic XPS data. Electrochemical parameters are additionally derived directly from x-ray photoemission data, and a method is presented to derive interface-state densities from such operando data.

Authors:

Richter, M. H. ^[1]; Lichterman, M. F. ^[1]; Hu, S. ^[1]; Crumlin, E. J. ^[2]; Mayer, T. ^[3]; Axnanda, S. ^[4]; Favaro, M. ^[5]; Drisdell, W. ^[5]; Hussain, Z. ^[4]; Brunschwig, B. ^[6]; Lewis, Nathan S. ^[1]; Liu, Z. ^[7]; Lewerenz, H. J. ^[1]

California Institute of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Technical Univ. of Darmstadt (Germany)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
California Institute of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
California Institute of Technology (CalTech), Pasadena, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Shanghai Inst. of Microsystem (China)

Publication Date:: Mon Apr 13 00:00:00 EDT 2015

Research Org.:: California Institute of Technology (CalTech), Pasadena, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1634096

Grant/Contract Number:: SC0004993; AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: ECS Transactions (Online)

Additional Journal Information:: Journal Name: ECS Transactions (Online); Journal Volume: 66; Journal Issue: 6; Journal ID: ISSN 1938-6737

Publisher:: Electrochemical Society

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats


                    Richter, M. H., Lichterman, M. F., Hu, S., Crumlin, E. J., Mayer, T., Axnanda, S., Favaro, M., Drisdell, W., Hussain, Z., Brunschwig, B., Lewis, Nathan S., Liu, Z., and Lewerenz, H. J. (Invited) Measurement of the Energy-Band Relations of Stabilized Si Photoanodes Using Operando Ambient Pressure X-ray Photoelectron Spectroscopy.  United States: N. p., 2015. 
Web.  doi:10.1149/06606.0105ecst.

Copy to clipboard


                    Richter, M. H., Lichterman, M. F., Hu, S., Crumlin, E. J., Mayer, T., Axnanda, S., Favaro, M., Drisdell, W., Hussain, Z., Brunschwig, B., Lewis, Nathan S., Liu, Z., & Lewerenz, H. J. (Invited) Measurement of the Energy-Band Relations of Stabilized Si Photoanodes Using Operando Ambient Pressure X-ray Photoelectron Spectroscopy.  United States.  https://doi.org/10.1149/06606.0105ecst

Copy to clipboard


                    Richter, M. H., Lichterman, M. F., Hu, S., Crumlin, E. J., Mayer, T., Axnanda, S., Favaro, M., Drisdell, W., Hussain, Z., Brunschwig, B., Lewis, Nathan S., Liu, Z., and Lewerenz, H. J. Mon .  
"(Invited) Measurement of the Energy-Band Relations of Stabilized Si Photoanodes Using Operando Ambient Pressure X-ray Photoelectron Spectroscopy".  United States.  https://doi.org/10.1149/06606.0105ecst.  https://www.osti.gov/servlets/purl/1634096.

Copy to clipboard


                    
@article{osti_1634096,

  title        = {(Invited) Measurement of the Energy-Band Relations of Stabilized Si Photoanodes Using Operando Ambient Pressure X-ray Photoelectron Spectroscopy},

  author       = {Richter, M. H. and Lichterman, M. F. and Hu, S. and Crumlin, E. J. and Mayer, T. and Axnanda, S. and Favaro, M. and Drisdell, W. and Hussain, Z. and Brunschwig, B. and Lewis, Nathan S. and Liu, Z. and Lewerenz, H. J.},

  abstractNote = {The energy-band relations and electronic properties for the light absorber/protection-layer stack of TiO2-stabilized Si photoanodes have been confirmed by ambient pressure x-ray synchrotron radiation photoelectron spectroscopy under an applied potential (operando), from single core-level emission lines. The experiments have further been complemented with laboratory-based monochromatic XPS data. Electrochemical parameters are additionally derived directly from x-ray photoemission data, and a method is presented to derive interface-state densities from such operando data.},

  doi          = {10.1149/06606.0105ecst},

  journal      = {ECS Transactions (Online)},

  number       = 6,

  volume       = 66,

  place        = {United States},

  year         = {Mon Apr 13 00:00:00 EDT 2015},

  month        = {Mon Apr 13 00:00:00 EDT 2015}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1149/06606.0105ecst

Other availability

Search WorldCat to find libraries that may hold this journal

Figures / Tables:

Figure 1: Model of the light-absorber/protection-layer/catalyst stack used in this investigation, consisting of a silicon substrate (e.g. n-doped Si bulk), the Si space-charge region (Si-SCR), the SiO₂ interface region, a TiO₂ protection layer, and an electrolyte layer for in-situ investigation. The expected potential distribution, U(x), is depicted for each layer.more »

All figures and tables (3 total)

Save / Share:

Export Metadata

Save to My Library

Figures / Tables found in this record:

Figure 1 (p. 3)

Figure 2 (p. 5)

Figure 3 (p. 7)

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

Similar Records in DOE PAGES and OSTI.GOV collections:

(Invited) Investigation of the Si/TiO₂/Electrolyte Interface Using Operando Tender X-ray Photoelectron Spectroscopy

Journal Article Lichterman, M. F. ; Richter, M. H. ; Hu, S. ; ... - ECS Transactions (Online)

Semiconductor-electrolyte interfaces provide for the creation of photoactive semiconductor systems that have band bending and other characteristics analogous to semiconductor-metal junctions (Schottky junctions). We demonstrate in our research that XPS measurements can be obtained on a full three-electrode electrochemical system under potentiostatic control by use of tender X-rays to provide photoelectrons with sufficient kinetic energy to penetrate through a thin electrolyte overlayer on a portion of the working electrode. The response of the photoelectron binding energies to variations in applied voltage demonstrates that the XPS investigation works in an operando manner to elucidate the energetics of such interfaces.
https://doi.org/10.1149/06606.0097ecst

Full Text Available
An Electrochemical, Microtopographical and Ambient Pressure X-Ray Photoelectron Spectroscopic Investigation of Si/TiO₂/Ni/Electrolyte Interfaces

Journal Article Lichterman, Michael F. ; Richter, Matthias H. ; Hu, Shu ; ... - Journal of the Electrochemical Society

The electrical and spectroscopic properties of the TiO₂/Ni protection layer system, which enables stabilization of otherwise corroding photoanodes, have been investigated in contact with electrolyte solutions by scanning-probe microscopy, electrochemistry and in-situ ambient pressure X-ray photoelectron spectroscopy (AP-XPS). Specifically, the energy-band relations of the p⁺-Si/ALD-TiO₂/Ni interface have been determined for a selected range of Ni thicknesses. AP-XPS measurements using tender X-rays were performed in a three-electrode electrochemical arrangement under potentiostatic control to obtain information from the semiconductor near-surface region, the electrochemical double layer (ECDL) and the electrolyte beyond the ECDL. The degree of conductivity depended on the chemical state ofmore »« less
Cited by 17
https://doi.org/10.1149/2.0861602jes

Full Text Available
Direct observation of the energetics at a semiconductor/liquid junction by operando X-ray photoelectron spectroscopy

Journal Article Lichterman, Michael F. ; Hu, Shu ; Richter, Matthias H. ; ... - Energy & Environmental Science

Photoelectrochemical (PEC) cells based on semiconductor/liquid interfaces offer an approach of converting solar energy to electricity or fuels. Currently, the understanding of semiconductor/liquid interfaces is inferred from experiments and models. Operando ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) has been used herein to directly characterize the semiconductor/liquid junction at room temperature under real-time electrochemical control. X-ray synchrotron radiation in conjunction with AP-XPS has enabled simultaneous monitoring of the solid surface, the solid/electrolyte interface, and the bulk electrolyte of a PEC cell as a function of the applied potential, U. The observed shifts in binding energy with respect to the applied potential havemore »« less
Cited by 123
https://doi.org/10.1039/C5EE01014D

Full Text Available
Analysis of the electronic structure of Hf(Si{sub 0.5}As{sub 0.5})As by X-ray photoelectron and photoemission spectroscopy

Journal Article Grosvenor, Andrew P. ; Cavell, Ronald G ; Mar, Arthur ; ... - Journal of Solid State Chemistry

The ternary hafnium silicon arsenide, Hf(Si{sub x}As{sub 1-x})As, has been synthesized with a phase width of 0.5{<=}x{<=}0.7. Single-crystal X-ray diffraction studies on Hf(Si{sub 0.5}As{sub 0.5})As showed that it adopts the ZrSiS-type structure (Pearson symbol tP6, space group P4/nmm, Z=2, a=3.6410(5) A, c=8.155(1) A). Physical property measurements indicated that it is metallic and Pauli paramagnetic. The electronic structure of Hf(Si{sub 0.5}As{sub 0.5})As was investigated by examining plate-shaped crystals with laboratory-based X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (PES). The Si 2p and As 3d XPS binding energies were consistent with assignments of anionic Si{sup 1-} and As{sup 1-}. However,more »« less
https://doi.org/10.1016/j.jssc.2007.07.015
Understanding the Oxygen Evolution Reaction Mechanism on CoO_x using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy

Journal Article Favaro, Marco ; Yang, Jinhui ; Nappini, Silvia ; ... - Journal of the American Chemical Society

Photoelectrochemical water splitting is a promising approach for renewable production of hydrogen from solar energy and requires interfacing advanced water-splitting catalysts with semiconductors. Understanding the mechanism of function of such electrocatalysts at the atomic scale and under realistic working conditions is a challenging, yet important, task for advancing efficient and stable function. This is particularly true for the case of oxygen evolution catalysts and, here, we study a highly active Co₃O₄/Co(OH)₂ biphasic electrocatalyst on Si by means of operando ambient-pressure X-ray photoelectron spectroscopy performed at the solid/liquid electrified interface. Spectral simulation and multiplet fitting reveal that the catalyst undergoes chemical-structuralmore »« less
Cited by 188
https://doi.org/10.1021/jacs.7b03211

Full Text Available

Similar Records