Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO2-Si photoanode
Abstract
Metal oxide semiconductor junctions are central to most electronic and optoelectronic devices, but ultrafast measurements of carrier transport have been limited to device-average measurements. Here, charge transport and recombination kinetics in each layer of a Ni-TiO2-Si junction is measured using the element specificity of broadband extreme ultraviolet (XUV) ultrafast pulses. After silicon photoexcitation, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in characteristic spectral shifts in the XUV edges. Meanwhile, the electrons remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO2, shifting the Ti spectrum to a higher oxidation state, followed by electron-hole recombination at the Si-TiO2 interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO2 and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously.
- Authors:
-
- California Institute of Technology (CalTech), Pasadena, CA (United States)
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States); Univ. of Central Florida, Orlando, FL (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE Office of Energy Efficiency and Renewable Energy (EERE); U.S. Air Force Office of Scientific Research
- OSTI Identifier:
- 1631652
- Grant/Contract Number:
- AC02-05CH11231; USAF- FA9550-14-1-0154; FA9550-19-1-0314
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 14; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Cushing, Scott K., Porter, Ilana J., de Roulet, Bethany R., Lee, Angela, Marsh, Brett M., Szoke, Szilard, Vaida, Mihai E., and Leone, Stephen R. Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO2-Si photoanode. United States: N. p., 2020.
Web. doi:10.1126/sciadv.aay6650.
Cushing, Scott K., Porter, Ilana J., de Roulet, Bethany R., Lee, Angela, Marsh, Brett M., Szoke, Szilard, Vaida, Mihai E., & Leone, Stephen R. Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO2-Si photoanode. United States. https://doi.org/10.1126/sciadv.aay6650
Cushing, Scott K., Porter, Ilana J., de Roulet, Bethany R., Lee, Angela, Marsh, Brett M., Szoke, Szilard, Vaida, Mihai E., and Leone, Stephen R. Fri .
"Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO2-Si photoanode". United States. https://doi.org/10.1126/sciadv.aay6650. https://www.osti.gov/servlets/purl/1631652.
@article{osti_1631652,
title = {Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO2-Si photoanode},
author = {Cushing, Scott K. and Porter, Ilana J. and de Roulet, Bethany R. and Lee, Angela and Marsh, Brett M. and Szoke, Szilard and Vaida, Mihai E. and Leone, Stephen R.},
abstractNote = {Metal oxide semiconductor junctions are central to most electronic and optoelectronic devices, but ultrafast measurements of carrier transport have been limited to device-average measurements. Here, charge transport and recombination kinetics in each layer of a Ni-TiO2-Si junction is measured using the element specificity of broadband extreme ultraviolet (XUV) ultrafast pulses. After silicon photoexcitation, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in characteristic spectral shifts in the XUV edges. Meanwhile, the electrons remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO2, shifting the Ti spectrum to a higher oxidation state, followed by electron-hole recombination at the Si-TiO2 interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO2 and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously.},
doi = {10.1126/sciadv.aay6650},
journal = {Science Advances},
number = 14,
volume = 6,
place = {United States},
year = {Fri Apr 03 00:00:00 EDT 2020},
month = {Fri Apr 03 00:00:00 EDT 2020}
}
Web of Science
Figures / Tables:
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