Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy
Abstract
The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the line shape and the local bias (Vl), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of Vl vary linearly with the applied bias (V) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-in bias (Vbi) is estimated by extrapolating Vl at V=0, which, when compared with independent C-V measurements, indicates an overall ±0.31 V accuracy of Vl. This demonstrates sub-bandgap photocurrent spectroscopy as a local probe of electric field in wide bandgap diodes that can be used to map out regions of device breakdown (hot spots) for improving electrostatic design of high-voltage devices.
- Authors:
-
[1];
[2];
[2];
[3]
- The Ohio State University (United States). Department of Materials Science Engineering
- The Ohio State University (United States). Department of Electrical and Computer Engineering
- The Ohio State University (United States). Department of Materials Science Engineering; The Ohio State University (United States). Department of Electrical and Computer Engineering
- Publication Date:
- Research Org.:
- The Ohio State Univ., Columbus, OH (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1799130
- Alternate Identifier(s):
- OSTI ID: 1630180
- Grant/Contract Number:
- AR0001036
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 20; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; Physics; Optical absorption; Photoconductivity; Electrostatics; Optoelectronics; Electric fields; P-N junction diodes; Photocurrent spectroscopy; Semiconductors; Electronic band structure
Citation Formats
Verma, Darpan, Adnan, Md Mohsinur Rahman, Rahman, Mohammad Wahidur, Rajan, Siddharth, and Myers, Roberto C. Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy. United States: N. p., 2020.
Web. doi:10.1063/1.5144778.
Verma, Darpan, Adnan, Md Mohsinur Rahman, Rahman, Mohammad Wahidur, Rajan, Siddharth, & Myers, Roberto C. Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy. United States. https://doi.org/10.1063/1.5144778
Verma, Darpan, Adnan, Md Mohsinur Rahman, Rahman, Mohammad Wahidur, Rajan, Siddharth, and Myers, Roberto C. Tue .
"Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy". United States. https://doi.org/10.1063/1.5144778. https://www.osti.gov/servlets/purl/1799130.
@article{osti_1799130,
title = {Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy},
author = {Verma, Darpan and Adnan, Md Mohsinur Rahman and Rahman, Mohammad Wahidur and Rajan, Siddharth and Myers, Roberto C.},
abstractNote = {The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the line shape and the local bias (Vl), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of Vl vary linearly with the applied bias (V) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-in bias (Vbi) is estimated by extrapolating Vl at V=0, which, when compared with independent C-V measurements, indicates an overall ±0.31 V accuracy of Vl. This demonstrates sub-bandgap photocurrent spectroscopy as a local probe of electric field in wide bandgap diodes that can be used to map out regions of device breakdown (hot spots) for improving electrostatic design of high-voltage devices.},
doi = {10.1063/1.5144778},
journal = {Applied Physics Letters},
number = 20,
volume = 116,
place = {United States},
year = {Tue May 19 00:00:00 EDT 2020},
month = {Tue May 19 00:00:00 EDT 2020}
}
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