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Title: Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [2]; ORCiD logo [3]
  1. Department of Materials Science Engineering, The Ohio State University, Columbus, Ohio 43210, USA
  2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
  3. Department of Materials Science Engineering, The Ohio State University, Columbus, Ohio 43210, USA, Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1630180
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 116 Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Verma, Darpan, Adnan, Md Mohsinur Rahman, Rahman, Mohammad Wahidur, Rajan, Siddharth, and Myers, Roberto C. Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy. United States: N. p., 2020. Web. doi:10.1063/1.5144778.
Verma, Darpan, Adnan, Md Mohsinur Rahman, Rahman, Mohammad Wahidur, Rajan, Siddharth, & Myers, Roberto C. Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy. United States. doi:https://doi.org/10.1063/1.5144778
Verma, Darpan, Adnan, Md Mohsinur Rahman, Rahman, Mohammad Wahidur, Rajan, Siddharth, and Myers, Roberto C. Mon . "Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy". United States. doi:https://doi.org/10.1063/1.5144778.
@article{osti_1630180,
title = {Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy},
author = {Verma, Darpan and Adnan, Md Mohsinur Rahman and Rahman, Mohammad Wahidur and Rajan, Siddharth and Myers, Roberto C.},
abstractNote = {},
doi = {10.1063/1.5144778},
journal = {Applied Physics Letters},
number = 20,
volume = 116,
place = {United States},
year = {2020},
month = {5}
}

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Works referenced in this record:

Two-dimensional analysis and design considerations of high-voltage planar junctions equipped with field plate and guard ring
journal, June 1991

  • Goud, C. B.; Bhat, K. N.
  • IEEE Transactions on Electron Devices, Vol. 38, Issue 6
  • DOI: 10.1109/16.81645

5.0 kV breakdown-voltage vertical GaN p–n junction diodes
journal, February 2018

  • Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa
  • Japanese Journal of Applied Physics, Vol. 57, Issue 4S
  • DOI: 10.7567/JJAP.57.04FG09

Simulation study of HEMT structures with HfO 2 cap layer for mitigating inverse piezoelectric effect related device failures
journal, January 2015

  • Nagulapally, Deepthi; Joshi, Ravi P.; Pradhan, Aswini
  • AIP Advances, Vol. 5, Issue 1
  • DOI: 10.1063/1.4905702

Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
journal, May 2004

  • Rajan, S.; Waltereit, P.; Poblenz, C.
  • IEEE Electron Device Letters, Vol. 25, Issue 5
  • DOI: 10.1109/LED.2004.826977

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings
journal, January 2020

  • Fu, Houqiang; Fu, Kai; Alugubelli, Shanthan R.
  • IEEE Electron Device Letters, Vol. 41, Issue 1
  • DOI: 10.1109/LED.2019.2954123

Double surface effect causes a peak in band-edge photocurrent spectra: a quantitative model
journal, August 2016


Fabrication and characterization of metal–semiconductor–metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE
journal, September 2000


The 2018 GaN power electronics roadmap
journal, March 2018

  • Amano, H.; Baines, Y.; Beam, E.
  • Journal of Physics D: Applied Physics, Vol. 51, Issue 16
  • DOI: 10.1088/1361-6463/aaaf9d

Wannier Exciton in an Electric Field. I. Optical Absorption by Bound and Continuum States
journal, November 1970


Reliability issues of GaN based high voltage power devices
journal, September 2011


A review of junction field effect transistors for high-temperature and high-power electronics
journal, December 1998


High-breakdown-voltage pn-junction diodes on GaN substrates
journal, January 2007


Electric-Field Effects on Optical Absorption near Thresholds in Solids
journal, July 1966


Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
journal, April 1999

  • Wetzel, C.; Takeuchi, T.; Amano, H.
  • Journal of Applied Physics, Vol. 85, Issue 7
  • DOI: 10.1063/1.369749

Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy
journal, July 2018

  • Janicki, Łukasz; Mohajerani, Matin Sadat; Hartmann, Jana
  • Applied Physics Letters, Vol. 113, Issue 3
  • DOI: 10.1063/1.5040941

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
journal, February 2016


Electric field effects on excitons in gallium nitride
journal, September 1996


Unstable behaviour of normally-off GaN E-HEMT under short-circuit
journal, March 2018

  • Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.
  • Semiconductor Science and Technology, Vol. 33, Issue 4
  • DOI: 10.1088/1361-6641/aab078

Binding energy for the intrinsic excitons in wurtzite GaN
journal, December 1996


Theoretical study of characteristics in GaN metal–semiconductor–metal photodetectors
journal, October 2003


Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors
journal, June 2003


Stark effect of one-dimensional Wannier excitons in polydiacetylene single crystals
journal, June 1992


Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
journal, June 2008

  • Meneghesso, Gaudenzio; Verzellesi, Giovanni; Danesin, Francesca
  • IEEE Transactions on Device and Materials Reliability, Vol. 8, Issue 2
  • DOI: 10.1109/TDMR.2008.923743

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
journal, November 1997

  • Muth, J. F.; Lee, J. H.; Shmagin, I. K.
  • Applied Physics Letters, Vol. 71, Issue 18
  • DOI: 10.1063/1.120191

Design of edge termination for GaN power Schottky diodes
journal, April 2005


Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy
journal, February 1996


Wannier Exciton in an Electric Field. II. Electroabsorption in Direct-Band-Gap Solids
journal, February 1971


Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization
journal, August 2018

  • Turkulets, Yury; Shalish, Ilan
  • Journal of Applied Physics, Vol. 124, Issue 7
  • DOI: 10.1063/1.5038800

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
journal, January 2005

  • Kumakura, K.; Makimoto, T.; Kobayashi, N.
  • Applied Physics Letters, Vol. 86, Issue 5
  • DOI: 10.1063/1.1861116

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage
journal, June 2018

  • Maeda, Takuya; Narita, Tetsuo; Kanechika, Masakazu
  • Applied Physics Letters, Vol. 112, Issue 25
  • DOI: 10.1063/1.5031215

Reflectance and emission spectra of excitonic polaritons in GaN
journal, August 1999


Design and simulation of a doping-less charge plasma based enhancement mode GaN MOSFET
journal, October 2017

  • Verma, Sumit; Loan, Sajad A.; Alamoud, Abdulrahman M.
  • Journal of Computational Electronics, Vol. 17, Issue 1
  • DOI: 10.1007/s10825-017-1084-6

Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage
journal, August 2016

  • Maeda, Takuya; Okada, Masaya; Ueno, Masaki
  • Applied Physics Express, Vol. 9, Issue 9
  • DOI: 10.7567/APEX.9.091002

Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors
journal, May 2014


An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN
journal, February 2000

  • Hou, Y. T.; Teo, K. L.; Li, M. F.
  • Applied Physics Letters, Vol. 76, Issue 8
  • DOI: 10.1063/1.125929

Temperature-dependent absorption measurements of excitons in GaN epilayers
journal, October 1997

  • Fischer, A. J.; Shan, W.; Song, J. J.
  • Applied Physics Letters, Vol. 71, Issue 14
  • DOI: 10.1063/1.119761

Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface
journal, February 2017


Absorption spectra of GaN: film characterization by Urbach spectral tail and the effect of electric field
journal, September 2001


Stability and Reliability of Lateral GaN Power Field-Effect Transistors
journal, November 2019

  • del Alamo, Jesus A.; Lee, Ethan S.
  • IEEE Transactions on Electron Devices, Vol. 66, Issue 11
  • DOI: 10.1109/TED.2019.2931718

Electroabsorption in Semiconductors: The Excitonic Absorption Edge
journal, April 1970


Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy
journal, November 2000

  • Wang, S.; Li, T.; Reifsnider, J. M.
  • IEEE Journal of Quantum Electronics, Vol. 36, Issue 11
  • DOI: 10.1109/3.890266

THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
journal, November 1969

  • Maruska, H. P.; Tietjen, J. J.
  • Applied Physics Letters, Vol. 15, Issue 10
  • DOI: 10.1063/1.1652845

Electric field effects on excitons in gallium nitride
journal, January 1997


Influence of the Electron-Phonon Coupling on Energy States of Wannier Excitons
journal, February 1974


Free electron distribution in AlGaN/GaN heterojunction field-effect transistors
journal, March 2002


Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination
journal, September 2019

  • Maeda, Takuya; Narita, Tetsuo; Ueda, Hiroyuki
  • Applied Physics Letters, Vol. 115, Issue 14
  • DOI: 10.1063/1.5114844

Franz−Keldysh Effect in GaN Nanowires
journal, July 2007

  • Cavallini, A.; Polenta, L.; Rossi, M.
  • Nano Letters, Vol. 7, Issue 7
  • DOI: 10.1021/nl070954o