Photorefractive InGaAs/GaAs multiple quantum wells in the Franz{endash}Keldysh geometry
Journal Article
·
· Journal of Applied Physics
We fabricate semi-insulating InGaAs/GaAs multiple quantum wells and observe the excitonic enhancement of the photorefractivity in the Franz{endash}Keldysh geometry at wavelengths of 0.92{endash}0.94 {mu}m. A maximum two-wave mixing gain of 138 cm{sup {minus}1} and a maximum diffraction efficiency of 1.5{times}10{sup {minus}4} are obtained. The saturation intensity and the spatial resolution are also measured by four-wave mixing. The diffraction efficiency is saturated at a high external electric field. The dominant cause of this saturation is the deviation of the excitonic electroabsorption from its quadratic law. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203694
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1370364; Othernumber: JAPIAU000089000011005889000001; 027112JAP; PBD: 1 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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