Separation of current density and electric field domains caused by nonlinear electronic instabilities

Kumar, Suhas; Williams, R. Stanley

doi:10.1038/s41467-018-04452-w

Title: Separation of current density and electric field domains caused by nonlinear electronic instabilities

Journal Article · 22 May 2018 · Nature Communications

DOI: https://doi.org/10.1038/s41467-018-04452-w · OSTI ID:1624097

Kumar, Suhas ^[1]; Williams, R. Stanley ^[2]

Hewlett Packard Labs, Palo Alto, CA (United States); DOE/OSTI
Hewlett Packard Labs, Palo Alto, CA (United States)

In 1963 Ridley postulated that under certain bias conditions circuit elements exhibiting a current- or voltage-controlled negative differential resistance will separate into coexisting domains with different current densities or electric fields, respectively, in a process similar to spinodal decomposition of a homogeneous liquid or disproportionation of a metastable chemical compound. The ensuing debate, however, failed to agree on the existence or causes of such electronic decomposition. Using thermal and chemical spectro-microscopy, we directly imaged signatures of current-density and electric-field domains in several metal oxides. The concept of local activity successfully predicts initiation and occurrence of spontaneous electronic decomposition, accompanied by a reduction in internal energy, despite unchanged power input and heat output. This reveals a thermodynamic constraint required to properly model nonlinear circuit elements. Our results explain the electroforming process that initiates information storage via resistance switching in metal oxides and has significant implications for improving neuromorphic computing based on nonlinear dynamical devices.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)

Sponsoring Organization:: Intelligence Advanced Research Projects Activity (IARPA); Office of the Director of National Intelligence (ODNI); USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1624097

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 9; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (80)

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Anomalously low electronic thermal conductivity in metallic vanadium dioxide Lee, Sangwook; Hippalgaonkar, Kedar; Yang, Fan Science, Vol. 355, Issue 6323 https://doi.org/10.1126/science.aag0410	journal	January 2017
A Theory of Domain- and Filament-Formation due to Carrier-Density Fluctuations in Conductors with Negative Differential Resistance Takeyama, Kyôzô; Kitahara, Kazuo Journal of the Physical Society of Japan, Vol. 39, Issue 1 https://doi.org/10.1143/jpsj.39.125	journal	July 1975
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Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO ₂ Kumar, Suhas; Pickett, Matthew D.; Strachan, John Paul Advanced Materials, Vol. 25, Issue 42 https://doi.org/10.1002/adma.201302046	journal	July 2013
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul Advanced Materials, Vol. 28, Issue 14 https://doi.org/10.1002/adma.201505435	journal	February 2016
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Resonant tunnelling and negative differential conductance in graphene transistors Britnell, L.; Gorbachev, R. V.; Geim, A. K. arXiv https://doi.org/10.48550/arxiv.1303.6864	text	January 2013
In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul arXiv https://doi.org/10.48550/arxiv.1510.05066	text	January 2015
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul arXiv https://doi.org/10.48550/arxiv.1602.01204	text	January 2016

Cited By (8)

Spontaneous current constriction in threshold switching devices Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09679-9	journal	April 2019
Origin of Current‐Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity Li, Shuai; Liu, Xinjun; Nandi, Sanjoy Kumar Advanced Functional Materials, Vol. 29, Issue 44 https://doi.org/10.1002/adfm.201905060	journal	August 2019
Low‐Conductance and Multilevel CMOS‐Integrated Nanoscale Oxide Memristors Sheng, Xia; Graves, Catherine E.; Kumar, Suhas Advanced Electronic Materials, Vol. 5, Issue 9 https://doi.org/10.1002/aelm.201800876	journal	November 2018
Stable Metallic Enrichment in Conductive Filaments in TaO _x ‐Based Resistive Switches Arising from Competing Diffusive Fluxes Ma, Yuanzhi; Goodwill, Jonathan M.; Li, Dasheng Advanced Electronic Materials, Vol. 5, Issue 7 https://doi.org/10.1002/aelm.201800954	journal	April 2019
Spontaneous current constriction in threshold switching devices Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09679-9	journal	April 2019
Subthreshold firing in Mott nanodevices del Valle, Javier; Salev, Pavel; Tesler, Federico Nature, Vol. 569, Issue 7756 https://doi.org/10.1038/s41586-019-1159-6	journal	May 2019
Summary of the Faraday Discussion on New memory paradigms: memristive phenomena and neuromorphic applications Williams, R. Stanley Faraday Discussions, Vol. 213 https://doi.org/10.1039/c8fd90061b	journal	January 2019
Intrinsic limits of leakage current in self-heating-triggered threshold switches Wang, Ziwen; Kumar, Suhas; Williams, R. Stanley Applied Physics Letters, Vol. 114, Issue 18 https://doi.org/10.1063/1.5089261	journal	May 2019

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