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Title: Separation of current density and electric field domains caused by nonlinear electronic instabilities

Abstract

In 1963 Ridley postulated that under certain bias conditions circuit elements exhibiting a current- or voltage-controlled negative differential resistance will separate into coexisting domains with different current densities or electric fields, respectively, in a process similar to spinodal decomposition of a homogeneous liquid or disproportionation of a metastable chemical compound. The ensuing debate, however, failed to agree on the existence or causes of such electronic decomposition. Using thermal and chemical spectro-microscopy, we directly imaged signatures of current-density and electric-field domains in several metal oxides. The concept of local activity successfully predicts initiation and occurrence of spontaneous electronic decomposition, accompanied by a reduction in internal energy, despite unchanged power input and heat output. This reveals a thermodynamic constraint required to properly model nonlinear circuit elements. Our results explain the electroforming process that initiates information storage via resistance switching in metal oxides and has significant implications for improving neuromorphic computing based on nonlinear dynamical devices.

Authors:
 [1];  [1]
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  1. Hewlett Packard Labs, Palo Alto, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Sponsoring Org.:
Office of the Director of National Intelligence (ODNI); Intelligence Advanced Research Projects Activity (IARPA); USDOE Office of Science (SC)
OSTI Identifier:
1624097
Grant/Contract Number:  
AC02-05CH11231; 2017-17013000002
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; science & technology - other topics; electrical and electronic engineering; nonlinear phenomena

Citation Formats

Kumar, Suhas, and Williams, R. Stanley. Separation of current density and electric field domains caused by nonlinear electronic instabilities. United States: N. p., 2018. Web. doi:10.1038/s41467-018-04452-w.
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Kumar, Suhas, & Williams, R. Stanley. Separation of current density and electric field domains caused by nonlinear electronic instabilities. United States. https://doi.org/10.1038/s41467-018-04452-w
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Kumar, Suhas, and Williams, R. Stanley. Wed . "Separation of current density and electric field domains caused by nonlinear electronic instabilities". United States. https://doi.org/10.1038/s41467-018-04452-w. https://www.osti.gov/servlets/purl/1624097.
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@article{osti_1624097,
title = {Separation of current density and electric field domains caused by nonlinear electronic instabilities},
author = {Kumar, Suhas and Williams, R. Stanley},
abstractNote = {In 1963 Ridley postulated that under certain bias conditions circuit elements exhibiting a current- or voltage-controlled negative differential resistance will separate into coexisting domains with different current densities or electric fields, respectively, in a process similar to spinodal decomposition of a homogeneous liquid or disproportionation of a metastable chemical compound. The ensuing debate, however, failed to agree on the existence or causes of such electronic decomposition. Using thermal and chemical spectro-microscopy, we directly imaged signatures of current-density and electric-field domains in several metal oxides. The concept of local activity successfully predicts initiation and occurrence of spontaneous electronic decomposition, accompanied by a reduction in internal energy, despite unchanged power input and heat output. This reveals a thermodynamic constraint required to properly model nonlinear circuit elements. Our results explain the electroforming process that initiates information storage via resistance switching in metal oxides and has significant implications for improving neuromorphic computing based on nonlinear dynamical devices.},
doi = {10.1038/s41467-018-04452-w},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {Wed May 23 00:00:00 EDT 2018},
month = {Wed May 23 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1038/s41467-018-04452-w
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Cited by: 32 works
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Figures / Tables:

Fig. 1 Fig. 1 : Current-controlled negative differential resistance (NDR). a im–Vext plots from Eqs. (1–2) for two different cases: RS < RNDR and RS > RNDR. Bias current (ibias) and the high and low stable currents (iH and iL) are marked. b dT/dt vs. T for the case of RS <more » RNDR for an applied voltage of 0.91 V. Temperatures corresponding to ibias, iH and iL are marked (Tbias, TH and TL). c dT/dt vs. T for the case of RS > RNDR for an applied voltage of 0.96 V. d Stable (‘S’) (TH and TL) and unstable (‘U’) (Tbias) temperatures corresponding to the steady-states for different applied Vext. e Same as d for the case of RS > RNDR. f Stable (jH and jL) and unstable (jU) current densities corresponding to the steady-states for different applied Vext. g Same as f for the case of RS > RNDR. h Area fractions (Af) of the two current density states (x and 1− x) plotted against Vext for RS < RNDR. i ΔH of the active layer vs. Vext for the unstable (‘U’) and decomposed (‘D’) states for RS < RNDR« less
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    Works referencing / citing this record:

    Spontaneous current constriction in threshold switching devices
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    Stable Metallic Enrichment in Conductive Filaments in TaO x ‐Based Resistive Switches Arising from Competing Diffusive Fluxes
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