Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
Abstract
We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. Additionally, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States)
- Wrocław Univ. of Science and Technology (Poland)
- National Inst. for Research and Development in Microtechnologies, Bucharest (Romania); Hyperion Univ., Bucharest (Romania)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; National Science Foundation (NSF); Center for Integrated Nanotechnologies (CINT); Polish National Science Centre (NCN); Ministry of Research and Innovation
- OSTI Identifier:
- 1599036
- Report Number(s):
- LA-UR-19-27978
Journal ID: ISSN 0003-6951; TRN: US2103752
- Grant/Contract Number:
- 89233218CNA000001; DMR 1410282; DMR 1810280; 2014/13/D/ST3/01947
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 8; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Material Science; Semiconductors; Localized states; Nuclear reaction analysis; Alloys; Ion beam analysis; Electronic bandstructure; Band gap; Photoreflectance; Photoluminescence spectroscopy
Citation Formats
Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., and Goldman, R. S.. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys. United States: N. p., 2019.
Web. doi:10.1063/1.5057424.
Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., & Goldman, R. S.. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys. United States. https://doi.org/10.1063/1.5057424
Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., and Goldman, R. S.. Mon .
"Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys". United States. https://doi.org/10.1063/1.5057424. https://www.osti.gov/servlets/purl/1599036.
@article{osti_1599036,
title = {Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys},
author = {Occena, J. and Jen, T. and Mitchell, J. W. and Linhart, W. M. and Pavelescu, E. -M. and Kudrawiec, R. and Wang, Y. Q. and Goldman, R. S.},
abstractNote = {We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. Additionally, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.},
doi = {10.1063/1.5057424},
journal = {Applied Physics Letters},
number = 8,
volume = 115,
place = {United States},
year = {2019},
month = {8}
}
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