Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Occena, J.; Jen, T.; Mitchell, J. W.; Linhart, W. M.; Pavelescu, E. -M.; Kudrawiec, R.; Wang, Y. Q.; Goldman, R. S.

doi:10.1063/1.5057424

Title: Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Abstract

We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. Additionally, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.

Authors:

^[1];

^[1]; Mitchell, J. W. ^[1];

^[2]; Pavelescu, E. -M. ^[3];

^[2];

^[4];

^[1]

Univ. of Michigan, Ann Arbor, MI (United States)
Wrocław Univ. of Science and Technology (Poland)
National Inst. for Research and Development in Microtechnologies, Bucharest (Romania); Hyperion Univ., Bucharest (Romania)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Publication Date:: Mon Aug 19 00:00:00 EDT 2019

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; National Science Foundation (NSF); Center for Integrated Nanotechnologies (CINT); Polish National Science Centre (NCN); Ministry of Research and Innovation

OSTI Identifier:: 1599036

Report Number(s):: LA-UR-19-27978
Journal ID: ISSN 0003-6951; TRN: US2103752

Grant/Contract Number:: 89233218CNA000001; DMR 1410282; DMR 1810280; 2014/13/D/ST3/01947

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 115; Journal Issue: 8; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Material Science; Semiconductors; Localized states; Nuclear reaction analysis; Alloys; Ion beam analysis; Electronic bandstructure; Band gap; Photoreflectance; Photoluminescence spectroscopy

Citation Formats


                    Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., and Goldman, R. S. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5057424.

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                    Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., & Goldman, R. S. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys.  United States.  https://doi.org/10.1063/1.5057424

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                    Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., and Goldman, R. S. Mon .  
"Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys".  United States.  https://doi.org/10.1063/1.5057424.  https://www.osti.gov/servlets/purl/1599036.

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@article{osti_1599036,

  title        = {Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys},

  author       = {Occena, J. and Jen, T. and Mitchell, J. W. and Linhart, W. M. and Pavelescu, E. -M. and Kudrawiec, R. and Wang, Y. Q. and Goldman, R. S.},

  abstractNote = {We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. Additionally, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.},

  doi          = {10.1063/1.5057424},

  journal      = {Applied Physics Letters},

  number       = 8,

  volume       = 115,

  place        = {United States},

  year         = {Mon Aug 19 00:00:00 EDT 2019},

  month        = {Mon Aug 19 00:00:00 EDT 2019}

}

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Title: Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Abstract

Citation Formats

An Algorithm for Least-Squares Estimation of Nonlinear Parameters journal, June 1963

Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaNxBiyAs1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05) journal, April 2018

The anomalous bandgap bowing in GaAsN journal, July 2002

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared journal, January 2013

Bi isoelectronic impurities in GaAs journal, February 2008

A method for the solution of certain non-linear problems in least squares journal, January 1944

Derivation of 12- and 14-band k · p Hamiltonians for dilute bismide and bismide-nitride semiconductors journal, November 2013

Stress evolution in GaAsN alloy films journal, May 2005

Generation of misfit dislocations in semiconductors journal, December 1987

Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x journal, March 2005

Third-derivative modulation spectroscopy with low-field electroreflectance journal, June 1973

Identifying the dominant interstitial complex in dilute GaAsN alloys journal, November 2015

Valence band anticrossing in GaBixAs1−x journal, July 2007

Bi-enhanced N incorporation in GaAsNBi alloys journal, June 2017

Defects in epitaxial multilayers journal, February 1976

Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces journal, July 1995

Theory of electronic structure evolution in GaAsN and GaPN alloys journal, August 2001

Band gap of GaAs1−xBix, 0<x<3.6% journal, June 2003

Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys journal, November 2011

Calculation of critical layer thickness versus lattice mismatch for Ge x Si 1− x /Si strained‐layer heterostructures journal, August 1985

Band parameters for III–V compound semiconductors and their alloys journal, June 2001

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs journal, February 2002

Modeling Bi-induced changes in the electronic structure of GaAs 1 − x Bi x alloys journal, December 2013

Clustering effects in Ga(AsBi) journal, March 2010

Similar and dissimilar aspects of III − V semiconductors containing Bi versus N journal, April 2005

Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix journal, September 2005

Datasets of seed mucilage traits for Arabidopsis thaliana natural accessions with atypical outer mucilage journal, March 2021

Influence of N incorporation on persistent photoconductivity in GaAsN alloys journal, April 2013

Molecular beam epitaxy growth of GaAs1−xBix journal, April 2003

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi journal, April 2018

Surfactant-induced chemical ordering of GaAsN:Bi journal, November 2018

Mechanisms of nitrogen incorporation in GaAsN alloys journal, September 2004

Temperature dependence of the energy gap in semiconductors journal, January 1967

Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers journal, May 1998

Ion beam characterization of GaAs1−x−yNxBiy epitaxial layers journal, June 2004

Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks journal, July 1975

An Algorithm for Least-Squares Estimation of Nonlinear Parameters
journal, June 1963

Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaNxBiyAs1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05)
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The anomalous bandgap bowing in GaAsN
journal, July 2002

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared
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Bi isoelectronic impurities in GaAs
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A method for the solution of certain non-linear problems in least squares
journal, January 1944

Derivation of 12- and 14-band k · p Hamiltonians for dilute bismide and bismide-nitride semiconductors
journal, November 2013

Stress evolution in GaAsN alloy films
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Generation of misfit dislocations in semiconductors
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Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x
journal, March 2005

Third-derivative modulation spectroscopy with low-field electroreflectance
journal, June 1973

Identifying the dominant interstitial complex in dilute GaAsN alloys
journal, November 2015

Valence band anticrossing in GaBixAs1−x
journal, July 2007

Bi-enhanced N incorporation in GaAsNBi alloys
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Defects in epitaxial multilayers
journal, February 1976

Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces
journal, July 1995

Theory of electronic structure evolution in GaAsN and GaPN alloys
journal, August 2001

Band gap of GaAs1−xBix, 0<x<3.6%
journal, June 2003

Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys
journal, November 2011

Calculation of critical layer thickness versus lattice mismatch for Ge _x Si _{1− x} /Si strained‐layer heterostructures
journal, August 1985

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
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Modeling Bi-induced changes in the electronic structure of GaAs $_{1 - x}$ Bi $_{x}$ alloys
journal, December 2013

Clustering effects in Ga(AsBi)
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Similar and dissimilar aspects of $III − V$ semiconductors containing $Bi$ versus $N$
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Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix
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Datasets of seed mucilage traits for Arabidopsis thaliana natural accessions with atypical outer mucilage
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Influence of N incorporation on persistent photoconductivity in GaAsN alloys
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Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi
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Surfactant-induced chemical ordering of GaAsN:Bi
journal, November 2018

Mechanisms of nitrogen incorporation in GaAsN alloys
journal, September 2004

Temperature dependence of the energy gap in semiconductors
journal, January 1967

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journal, May 1998

Ion beam characterization of GaAs1−x−yNxBiy epitaxial layers
journal, June 2004

Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks
journal, July 1975