Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
Journal Article
·
· Applied Physics Letters
- Univ. of Michigan, Ann Arbor, MI (United States)
- Wrocław Univ. of Science and Technology (Poland)
- National Inst. for Research and Development in Microtechnologies, Bucharest (Romania); Hyperion Univ., Bucharest (Romania)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. Additionally, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; National Science Foundation; Center for Integrated Nanotechnologies (CINT); Polish National Science Center; Ministry of Research and Innovation
- Grant/Contract Number:
- 89233218CNA000001
- OSTI ID:
- 1599036
- Report Number(s):
- LA-UR--19-27978
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 115; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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