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Title: Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Abstract

We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. Additionally, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2];  [3]; ORCiD logo [2]; ORCiD logo [4]; ORCiD logo [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Wrocław Univ. of Science and Technology (Poland)
  3. National Inst. for Research and Development in Microtechnologies, Bucharest (Romania); Hyperion Univ., Bucharest (Romania)
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; National Science Foundation (NSF); Center for Integrated Nanotechnologies (CINT); Polish National Science Centre (NCN); Ministry of Research and Innovation
OSTI Identifier:
1599036
Report Number(s):
LA-UR-19-27978
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
89233218CNA000001; DMR 1410282; DMR 1810280; 2014/13/D/ST3/01947
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science; Semiconductors; Localized states; Nuclear reaction analysis; Alloys; Ion beam analysis; Electronic bandstructure; Band gap; Photoreflectance; Photoluminescence spectroscopy

Citation Formats

Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., and Goldman, R. S. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys. United States: N. p., 2019. Web. https://doi.org/10.1063/1.5057424.
Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., & Goldman, R. S. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys. United States. https://doi.org/10.1063/1.5057424
Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E. -M., Kudrawiec, R., Wang, Y. Q., and Goldman, R. S. Mon . "Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys". United States. https://doi.org/10.1063/1.5057424. https://www.osti.gov/servlets/purl/1599036.
@article{osti_1599036,
title = {Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys},
author = {Occena, J. and Jen, T. and Mitchell, J. W. and Linhart, W. M. and Pavelescu, E. -M. and Kudrawiec, R. and Wang, Y. Q. and Goldman, R. S.},
abstractNote = {We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. Additionally, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.},
doi = {10.1063/1.5057424},
journal = {Applied Physics Letters},
number = 8,
volume = 115,
place = {United States},
year = {2019},
month = {8}
}

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Works referenced in this record:

An Algorithm for Least-Squares Estimation of Nonlinear Parameters
journal, June 1963

  • Marquardt, Donald W.
  • Journal of the Society for Industrial and Applied Mathematics, Vol. 11, Issue 2
  • DOI: 10.1137/0111030

Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaNxBiyAs1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05)
journal, April 2018


The anomalous bandgap bowing in GaAsN
journal, July 2002

  • Tisch, U.; Finkman, E.; Salzman, J.
  • Applied Physics Letters, Vol. 81, Issue 3
  • DOI: 10.1063/1.1494469

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared
journal, January 2013

  • Sweeney, S. J.; Jin, S. R.
  • Journal of Applied Physics, Vol. 113, Issue 4
  • DOI: 10.1063/1.4789624

Bi isoelectronic impurities in GaAs
journal, February 2008


A method for the solution of certain non-linear problems in least squares
journal, January 1944

  • Levenberg, Kenneth
  • Quarterly of Applied Mathematics, Vol. 2, Issue 2
  • DOI: 10.1090/qam/10666

Derivation of 12- and 14-band k · p Hamiltonians for dilute bismide and bismide-nitride semiconductors
journal, November 2013

  • Broderick, Christopher A.; Usman, Muhammad; O'Reilly, Eoin P.
  • Semiconductor Science and Technology, Vol. 28, Issue 12
  • DOI: 10.1088/0268-1242/28/12/125025

Stress evolution in GaAsN alloy films
journal, May 2005

  • Reason, M.; Weng, X.; Ye, W.
  • Journal of Applied Physics, Vol. 97, Issue 10
  • DOI: 10.1063/1.1900289

Generation of misfit dislocations in semiconductors
journal, December 1987

  • Marée, P. M. J.; Barbour, J. C.; van der Veen, J. F.
  • Journal of Applied Physics, Vol. 62, Issue 11
  • DOI: 10.1063/1.339078

Defects in epitaxial multilayers: I. Misfit dislocations
journal, December 1974


Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x
journal, March 2005

  • Tixier, S.; Webster, S. E.; Young, E. C.
  • Applied Physics Letters, Vol. 86, Issue 11
  • DOI: 10.1063/1.1886254

Identifying the dominant interstitial complex in dilute GaAsN alloys
journal, November 2015

  • Jen, T.; Vardar, G.; Wang, Y. Q.
  • Applied Physics Letters, Vol. 107, Issue 22
  • DOI: 10.1063/1.4935857

Valence band anticrossing in GaBixAs1−x
journal, July 2007

  • Alberi, K.; Dubon, O. D.; Walukiewicz, W.
  • Applied Physics Letters, Vol. 91, Issue 5
  • DOI: 10.1063/1.2768312

Bi-enhanced N incorporation in GaAsNBi alloys
journal, June 2017

  • Occena, J.; Jen, T.; Rizzi, E. E.
  • Applied Physics Letters, Vol. 110, Issue 24
  • DOI: 10.1063/1.4984227

Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces
journal, July 1995

  • Goldman, R. S.; Wieder, H. H.; Kavanagh, K. L.
  • Applied Physics Letters, Vol. 67, Issue 3
  • DOI: 10.1063/1.115439

Theory of electronic structure evolution in GaAsN and GaPN alloys
journal, August 2001


Band gap of GaAs1−xBix, 0<x<3.6%
journal, June 2003

  • Francoeur, S.; Seong, M. -J.; Mascarenhas, A.
  • Applied Physics Letters, Vol. 82, Issue 22
  • DOI: 10.1063/1.1581983

Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys
journal, November 2011

  • Mohmad, A. R.; Bastiman, F.; Ng, J. S.
  • physica status solidi (c), Vol. 9, Issue 2
  • DOI: 10.1002/pssc.201100256

Calculation of critical layer thickness versus lattice mismatch for Ge x Si 1− x /Si strained‐layer heterostructures
journal, August 1985

  • People, R.; Bean, J. C.
  • Applied Physics Letters, Vol. 47, Issue 3
  • DOI: 10.1063/1.96206

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
journal, February 2002


Modeling Bi-induced changes in the electronic structure of GaAs 1 x Bi x alloys
journal, December 2013


Clustering effects in Ga(AsBi)
journal, March 2010

  • Imhof, Sebastian; Thränhardt, Angela; Chernikov, Alexej
  • Applied Physics Letters, Vol. 96, Issue 13
  • DOI: 10.1063/1.3374884

Similar and dissimilar aspects of III V semiconductors containing Bi versus N
journal, April 2005


Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix
journal, September 2005

  • Huang, Wei; Oe, Kunishige; Feng, Gan
  • Journal of Applied Physics, Vol. 98, Issue 5
  • DOI: 10.1063/1.2032618

Influence of N incorporation on persistent photoconductivity in GaAsN alloys
journal, April 2013


Molecular beam epitaxy growth of GaAs1−xBix
journal, April 2003

  • Tixier, S.; Adamcyk, M.; Tiedje, T.
  • Applied Physics Letters, Vol. 82, Issue 14
  • DOI: 10.1063/1.1565499

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi
journal, April 2018


Surfactant-induced chemical ordering of GaAsN:Bi
journal, November 2018

  • Occena, J.; Jen, T.; Lu, H.
  • Applied Physics Letters, Vol. 113, Issue 21
  • DOI: 10.1063/1.5045606

Mechanisms of nitrogen incorporation in GaAsN alloys
journal, September 2004

  • Reason, M.; McKay, H. A.; Ye, W.
  • Applied Physics Letters, Vol. 85, Issue 10
  • DOI: 10.1063/1.1789237

Temperature dependence of the energy gap in semiconductors
journal, January 1967


Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers
journal, May 1998

  • Goldman, R. S.; Kavanagh, K. L.; Wieder, H. H.
  • Journal of Applied Physics, Vol. 83, Issue 10
  • DOI: 10.1063/1.367331

Ion beam characterization of GaAs1−x−yNxBiy epitaxial layers
journal, June 2004

  • Wei, P.; Tixier, S.; Chicoine, M.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 219-220
  • DOI: 10.1016/j.nimb.2004.01.140