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Title: Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5057424 · OSTI ID:1599036

We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. Additionally, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; National Science Foundation; Center for Integrated Nanotechnologies (CINT); Polish National Science Center; Ministry of Research and Innovation
Grant/Contract Number:
89233218CNA000001
OSTI ID:
1599036
Report Number(s):
LA-UR--19-27978
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 115; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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