Multicolor emission from intermediate band semiconductor ZnO1-xSex

Welna, M.; Baranowski, M.; Linhart, W. M.; Kudrawiec, R.; Yu, K. M.; Mayer, M.; Walukiewicz, W.

doi:10.1038/srep44214

Title: Multicolor emission from intermediate band semiconductor ZnO_1-xSe_x

Abstract

Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E_- and upper E₊ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.

Authors:

Welna, M. ^[1]; Baranowski, M. ^[2]; Linhart, W. M. ^[1]; Kudrawiec, R. ^[1]; Yu, K. M. ^[3]; Mayer, M. ^[4]; Walukiewicz, W. ^[4]

Wroclaw Univ. of Science and Technology (Poland). Dept. of Experimental Physics. Faculty of Fundamental Problems of Technology
Wroclaw Univ. of Science and Technology (Poland). Dept. of Experimental Physics. Faculty of Fundamental Problems of Technology; National Lab. for Intense Magnetic Fields (LNCMI), Grenoble and Toulouse (France)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; City Univ. of Hong Kong (China). Dept. of Physics and Materials Science
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

Publication Date:: 2017-03-13

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Centre (Poland); Research Grants Council of Hong Kong SAR (China)

OSTI Identifier:: 1408425

Grant/Contract Number:: AC02-05CH11231; 2013/10/M/ST3/00638; 2014/15/N/ST3/03811; 2014/13/D/ST3/01947; 11303715

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 7; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; semiconductors; solar cells

Citation Formats


                    Welna, M., Baranowski, M., Linhart, W. M., Kudrawiec, R., Yu, K. M., Mayer, M., and Walukiewicz, W. Multicolor emission from intermediate band semiconductor ZnO1-xSex.  United States: N. p., 2017. 
Web.  doi:10.1038/srep44214.

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                    Welna, M., Baranowski, M., Linhart, W. M., Kudrawiec, R., Yu, K. M., Mayer, M., & Walukiewicz, W. Multicolor emission from intermediate band semiconductor ZnO1-xSex.  United States.  https://doi.org/10.1038/srep44214

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                    Welna, M., Baranowski, M., Linhart, W. M., Kudrawiec, R., Yu, K. M., Mayer, M., and Walukiewicz, W. Mon .  
"Multicolor emission from intermediate band semiconductor ZnO1-xSex".  United States.  https://doi.org/10.1038/srep44214.  https://www.osti.gov/servlets/purl/1408425.

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@article{osti_1408425,

  title        = {Multicolor emission from intermediate band semiconductor ZnO1-xSex},

  author       = {Welna, M. and Baranowski, M. and Linhart, W. M. and Kudrawiec, R. and Yu, K. M. and Mayer, M. and Walukiewicz, W.},

  abstractNote = {Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E- and upper E+ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.},

  doi          = {10.1038/srep44214},

  journal      = {Scientific Reports},

  number       = ,

  volume       = 7,

  place        = {United States},

  year         = {2017},

  month        = {3}

}

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https://doi.org/10.1038/srep44214

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Works referencing / citing this record:

Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence
journal, May 2019

Wełna, M.; Baranowski, M.; Kudrawiec, R.
Journal of Applied Physics, Vol. 125, Issue 20
DOI: 10.1063/1.5093548

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states
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Polak, M. P.; Kudrawiec, R.; Rubel, O.
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Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states
text, January 2019

Polak, Maciej P.; Kudrawiec, Robert; Rubel, Oleg
arXiv
DOI: 10.48550/arxiv.1904.00159

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Title: Multicolor emission from intermediate band semiconductor ZnO1-xSex

Abstract

Citation Formats

Effect of Sb on GaNAs Intermediate Band Solar Cells journal, April 2013

Band Anticrossing in GaInNAs Alloys journal, February 1999

Valence band hybridization in N -rich GaN 1 − x As x alloys journal, September 2004

Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN 0.02 As 0.98 , Ga 0.95 In 0.05 N 0.02 As 0.98 , and GaN 0.02 As 0.90 Sb 0.08 layers journal, September 2013

Valence-band ordering in ZnO journal, July 1999

Valence-band anticrossing in mismatched III-V semiconductor alloys journal, January 2007

Third-derivative modulation spectroscopy with low-field electroreflectance journal, June 1973

Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study journal, June 2015

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Bi-induced band gap reduction in epitaxial InSbBi alloys journal, November 2014

Valence band anticrossing in GaBixAs1−x journal, July 2007

Two-Photon Absorption in GaAs 1 − x − y P y N x Intermediate-Band Solar Cells journal, May 2015

Theoretical Study of Momentum Matrix Elements of GaN journal, February 1996

Contactless electroreflectance studies of free exciton binding energy in Zn 1-x Mg x O epilayers journal, December 2013

Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap journal, March 2013

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps journal, December 2003

Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides journal, July 2015

Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries journal, August 2000

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Temperature-dependent exciton luminescence in quantum wells by computer simulation journal, November 1998

Thermal quenching of single localized excitons in GaInNAs layers journal, March 2011

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Title: Multicolor emission from intermediate band semiconductor ZnO_1-xSe_x

Effect of Sb on GaNAs Intermediate Band Solar Cells
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Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN $_{0.02}$ As $_{0.98}$ , Ga $_{0.95}$ In $_{0.05}$ N $_{0.02}$ As $_{0.98}$ , and GaN $_{0.02}$ As $_{0.90}$ Sb $_{0.08}$ layers
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Band structure engineering of ZnO1−xSex alloys
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Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs
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The nature of optical transitions in Ga0.64In0.36As1−xNx/GaAs single quantum wells with low nitrogen content (x≤0.008)
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journal, November 2009

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journal, July 2010

Tuning structural, electrical, and optical properties of oxide alloys: ZnO _1−x Se _x
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journal, February 2013

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