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Title: Multicolor emission from intermediate band semiconductor ZnO1-xSex

Journal Article · · Scientific Reports
DOI: https://doi.org/10.1038/srep44214 · OSTI ID:1408425
 [1];  [2];  [1];  [1];  [3];  [4];  [4]
  1. Wroclaw Univ. of Science and Technology (Poland). Dept. of Experimental Physics. Faculty of Fundamental Problems of Technology
  2. Wroclaw Univ. of Science and Technology (Poland). Dept. of Experimental Physics. Faculty of Fundamental Problems of Technology; National Lab. for Intense Magnetic Fields (LNCMI), Grenoble and Toulouse (France)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; City Univ. of Hong Kong (China). Dept. of Physics and Materials Science
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
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Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E- and upper E+ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Centre (Poland); Research Grants Council of Hong Kong SAR (China)
Grant/Contract Number:
AC02-05CH11231; 2013/10/M/ST3/00638; 2014/15/N/ST3/03811; 2014/13/D/ST3/01947; 11303715
OSTI ID:
1408425
Journal Information:
Scientific Reports, Vol. 7; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

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Cited By (3)

Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence journal May 2019
Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states journal November 2019
Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states text January 2019

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Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
semiconductors
solar cells